®
SMALL SIGNAL SC HO TTKY DIODE
DESCRIPTION
General purpose, metal to silicon diode featuring
high breakdown voltage low turn-on voltage.
TMMBAT 46
MINIMELF
(Glass)
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
I
FRM
I
FSM
P
T
RRM
I
F
tot
stg
T
T
L
Repetitive Peak Reverse Voltage 100 V
Forward Continuous Current
Repetitive Peak Fordware Current
T
l
t
≤ 1s
p
δ ≤
= 25
0.5
C
°
150 mA
350 mA
Surge non Repetitive Forward Current tp = 10ms 750 mA
Power Dissipation
= 80 °C
T
l
150 mW
Storage and Junction Temperature Range - 65 to + 150
j
- 65 to + 125
Maximum Temperature for Soldering during 15s 260
THERMAL RESIS TANCE
Symbol Test Conditions Value Unit
R
th(j-l)
Junction-leads 300
°
°
°
C/W
°
C
C
C
August 1999 Ed: 1A
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TMMBAT 46
ELECTRICAL CHARACT ER ISTI CS
ST ATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
V
*
F
I
*
R
Tj = 25°CI
= 25°C
T
j
= 25°C
T
j
= 25°C
T
j
= 25°C
T
j
= 60°C
T
j
= 25°C
T
j
= 60°C
T
j
T
= 25°C
j
= 60°C
T
j
T
= 25°C
j
= 60°C
T
j
= 100µA
R
I
= 0.1mA 0.25 V
F
I
= 10mA 0.45
F
I
= 250mA 1
F
V
= 1.5V 0.5
R
V
= 10V 0.8
R
V
= 50V 2
R
V
= 75V 5
R
DYNAMIC CHARACT ER ISTI CS
Symbol Test Conditions Min. Typ. Max. Unit
C
T
= 25°CV
j
T
= 25°CV
j
= 0V
R
= 1V
R
f = 1MHz 10 pF
100 V
5
7.5
15
20
6
A
µ
* Pulse tes t: t
300µs δ < 2%
≤
p
.
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
2/4
TMMBAT 46
Figure 3. Reverse current versus junction
temperature (typical values).
Figure 4. Reverse current versus continuous
reverse voltage.
Figure 5. Forward current versus forward
voltage (typical values).
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TMMBAT 46
PACKAGE MECHANICAL DATA
MINIMELF Glass
A
C
C
FOOT PRINT DIMENSIONS (Millimeter)
2
DIMENSIONS
REF.
Millimeters Inches
Min. T yp. Max. Min. Typ. Max.
B
/
O
A 3.30 3.40 3.6 0.130 0.134 0.142
B 1.59 1.60 1.62 0.063 0.063 0.064
C 0.40 0.45 0.50 0.016 0.018 0.020
D 1.50 0.059
2.5
5
Marking: ring at cathode end.
Weight: 0.05g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such informat ion nor for any infringement of p atent s or other rights of third parties whic h may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval
of STMicroelectronic s.
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© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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