ST TMM 6263 User Manual
®
SMALL SIGNAL SC HO TTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.
Primarly intended for high level U HF/VHF detection
and pulse application with broad dynamic range.
TMM 6263
MINIMELF
(Glass)
ABSOL UT E MAXIMUM RATING S
(limiting values)
Symbol Parameter Value Unit
V
I
FSM
T
RRM
I
F
stg
T
T
L
Repetitive Peak Reverse Voltage 60 V
Forward Continuous Current
Surge non Repetitive Forward Current
= 25 °C
T
i
≤ 1s
t
p
15 mA
50 mA
Storage and Junction Temperature Range - 65 to 200
j
-65 to 200
Maximum Temperature for Soldering during 15s 260
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-l)
Junction-leads 400
ELECTRICAL CHARACT E RISTI CS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
V
*
F
I
*
R
T
= 25°CI
amb
= 25°CI
T
amb
T
= 25°C IF = 15mA
amb
= 25°CV
T
amb
= 10µA
R
= 1mA
F
= 50V
R
60 V
0.41 V
1
0.2
C/W
°
µ
C
°
C
°
A
DYNAMIC CHARACTERI STICS
Symbol Test Conditions Min. Typ. Max. Unit
C
τ
* Pulse test: t
Matched batches availabl e on request. Test conditions (forward voltage and/or capacitan ce) accordi ng to customer specification.
T
= 25°CV
amb
T
= 25°CI
amb
300µs δ < 2%
≤
p
= 0V f = 1MHz
R
= 5mA Krakauer Method
F
.
August 1999 Ed: 1A
2.2 pF
100 ps
1/3
TMM 6263
Figure 1. Forward current versus forward
voltage (typical values).
Figure 2. Capacitance C versus reverse
applied voltage V
(typical values).
R
Figure 3. Reverse current versus ambient
temperature.
Figure 4. Rever se current versus continuous
reverse voltage (typical values).
2/3
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