ST TIP132 User Manual
TIP135
TIP132
TIP135 TIP137
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
■STMicroelectronics PREFERRED SALESTYPES
APPLICATION
■LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
3
2
1
DESCRIPTION
The TIP132 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications.
The complementary PNP type is TIP137 . Also TIP135 is a PNP type.
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 5 KΩ R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
Val ue |
|
Un it |
|
NPN |
|
T IP132 |
|
|
PNP |
TIP135 |
T IP137 |
|
VCBO |
Collector-Base Voltage (IE = 0) |
60 |
100 |
V |
VCEO |
Collector-Emitter Voltage (IB = 0) |
60 |
100 |
V |
VEBO |
Emitter-Base Voltage (IC = 0) |
5 |
|
V |
IC |
Collector Current |
8 |
|
A |
ICM |
Collector Peak Current |
12 |
|
A |
IB |
Base Current |
0.3 |
|
A |
Ptot |
Total Dissipation at Tcas e ≤ 25 oC |
70 |
|
W |
|
Tamb ≤ 25 oC |
2 |
|
W |
Ts tg |
Storage Temperature |
-65 to 150 |
|
o C |
Tj |
Max. Operating Junction Temperature |
150 |
|
o C |
* For PNP types voltage and current values are negative.
October 1999 |
1/4 |
TIP132 / TIP135 / TIP137
THERMAL DATA
Rthj -case |
Thermal |
Resistance |
Junction-case |
Max |
1.78 |
oC/W |
Rthj -amb |
Thermal |
Resistance |
Junction-ambient |
Max |
63.5 |
oC/W |
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
ICEO
ICBO
IEBO
VCEO(sus )*
VCE(sat )*
VBE *
hF E*
Parameter |
Test Con ditions |
Min. T yp. Max. |
Unit |
||
Collector Cut-off |
VCE = Half Rated VCEO |
|
0.5 |
mA |
|
Current (IB = 0) |
|
|
|
|
|
Collector Cut-off |
VCB = Rated VCBO |
|
|
0.2 |
mA |
Current (IE = 0) |
|
|
|
|
|
Emitter Cut-off Current |
VEB = 5 V |
|
|
5 |
mA |
(IC = 0) |
|
|
|
|
|
Collector-Emitter |
IC = 30 mA |
|
|
|
|
Sustaining Voltage |
for TIP135 |
|
60 |
|
V |
(IB = 0) |
for T IP132/T IP137 |
|
100 |
|
V |
Collector-Emitter |
IC = 4 A |
IB = 16 mA |
|
2 |
V |
Saturation Voltage |
IC = 6 A |
IB = 30 mA |
|
4 |
V |
Base-Emitter Voltage |
IC = 4 A |
VCE = 4 V |
|
2.5 |
V |
DC Current Gain |
IC = 1 A |
VCE = 4 V |
500 |
|
|
|
IC = 4 A |
VCE = 4 V |
1000 |
15000 |
|
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % For PNP types voltage and current values are negative.
Safe Operating Areas |
Power Derating Curve |
2/4
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