ST TIP132 User Manual

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TIP132
COMPLEMENTARY SILICON POWER
STMicroelectronicsPREFERRED
SALESTYPES
APPLICATION
LINEARAND SWITCHING INDUSTRIAL
DESCRIPTION
The TIP132 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package.It is intentedfor use in power linearand switchingapplications.
ThecomplementaryPNP type is TIP137 . AlsoTIP135 is aPNP type.
TIP135 TIP137
DARLINGTONTRANSISTORS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R
Typ. = 5 K R2Typ. = 150
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP132 PNP TIP135 TIP13 7
V V V
I
P
T
* ForPNPtypes voltageand current values are negative.
October 1999
Coll ect o r -B a s e Volt age (IE= 0) 60 100 V
CBO
Coll ect o r -E mit t er Voltage ( IB= 0) 60 100 V
CEO
Emit ter-B ase Voltage (IC=0) 5 V
EBO
Coll ect o r Current 8 A
I
C
Coll ect o r P e ak Cur rent 12 A
CM
Base Current 0.3 A
I
B
Total Dissipation at T
tot
St orage Te mpe r ature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
T
case amb
o
≤ 25
25 oC
C
70
2
W W
o
C
o
C
1/4
TIP132 / TIP135 / TIP137
THERMAL DATA
R
thj-case
R
thj-amb
Ther mal Res ist ance J unction-cas e Max Ther mal Res ist ance J unction-amb ien t Max
1.78
63.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unlessotherwisespecified)
(T
case
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
I
CEO
I
CBO
I
EBO
V
CEO(su s)
Collec to r Cut- off Current (I
B
=0)
Collec to r Cut- off Current (I
E
=0)
Emitter Cut-off Current
=0)
(I
C
* Collector-E mitter
Sust aining Vo lt age
=0)
(I
B
V
* Collector-Emitte r
CE(sat)
Sat uration V oltage
V
* Base-Emitter Voltage IC=4A VCE=4V 2.5 V
BE
h
* DC Current Gain IC=1A VCE=4V
FE
Pulsed: Pulse duration= 300 µs, dutycycle 1.5%
For PNP typesvoltage and current values are negative.
V
= Half Rated V
CE
V
=RatedV
CB
V
=5V 5 mA
EB
I
=30mA
C
for TIP 135 for TIP132/TIP137
CEO
CBO
60
100
IC=4A IB=16mA
=6A IB=30mA
I
C
0.5 mA
0.2 mA
2 4
500
=4A VCE=4V
I
C
1000 15000
V V
V V
2/4
PowerDerating CurveSafeOperating Areas
TO-220 MECHANICAL DATA
TIP132 / TIP135 / TIP137
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
3/4
TIP132 / TIP135 / TIP137
4/4
Information furnished isbelieved to beaccurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject tochange without notice. This publication supersedes and replaces allinformation previously supplied. STMicroelectronics products are not authorized for use as critical components inlife support devices or systems without express written approval of STMicroelectronics.
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