ST TIP122FP, TIP127FP User Manual

TIP127FP

TIP122FP

TIP127FP

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

■SGS-THOMSON PREFERRED SALESTYPES

■FULLY MOLDED ISOLATED PACKAGE

■2000 V DC ISOLATION (U.L. COMPLIANT)

DESCRIPTION

The TIP122FP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration Jedec TO-220FP fully molded isolated package, intented for use in power linear and switching applications.

The complementary PNP type is TIP127FP.

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TO-220FP

INTERNAL SCHEMATIC DIAGRAM

		R1 Typ. = 5 KΩ	R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol	Parameter	Val ue		Uni t
	NPN	T IP122FP
	PNP	T IP127FP
VCBO	Collector-Base Voltage (IE = 0)	100		V
VCEO	Collector-Emitter Voltage (IB = 0)	100		V
VEBO	Emitter-Base Voltage (IC = 0)	5		V
IC	Collector Current	5		A
ICM	Collector Peak Current	8		A
IB	Base Current	0.1		A
Pt ot	Total Dissipation at Tcase ≤ 25 oC	29		W
	Tamb ≤ 25 oC	2		W
Tstg	Storage Temperature	-65 to 150		oC
Tj	Max. Operating Junction Temperature	150		oC

* For PNP types voltage and current values are negative.

April 1998

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TIP122FP / TIP127FP

THERMAL DATA

Rt hj-ca se	Thermal	Resistance	Junction-case	Max	4.3	oC/W
Rt hjamb	Thermal	Resistance	Junction-ambient	Max	62.5	oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it

ICEO

ICBO

IEBO

VCEO(s us) *

VCE(s at)*

VBE(on) *

hFE *

Collector Cut-off

Current (IB = 0)

Collector Cut-off

Current (IB = 0)

Emitter Cut-off Current

(IC = 0)

Collector-Emitter

Sustaining Voltage

(IB = 0)

VCE = 50 V

VCE = 100 V

VEB = 5 V

IC = 30 mA

Collector-Emitter	IC = 3	A
Saturation Voltage	IC = 5	A
Base-Emitter Voltage	IC = 3	A
DC Current Gain	IC = 0.	5 A
	IC = 3	A

* For PNP types voltage and current values are negative.

	0.5	mA
	0.2	mA
	2	mA
	100	V
IB = 12 mA	2	V
IB = 20 mA	4	V
VCE = 3 V	2.5	V
VCE = 3 V	1000
VCE = 3 V	1000

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