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TIP122FP
®
COMPLEMENTARY SILICON POWER
■ STMicroelectronics PRE FERRE D
SALESTYPES
■ FULLY INSULATE D PA CKAG E (U. L.
COMPLIANT) FOR EASY MOUNTING
DESCRIPTION
The TIP122FP is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220FP fully
molded isolated package. It is intented for use in
power linear and switching applications.
The complementary PNP type is TIP127FP.
TIP127FP
DARLINGTON TRANSISTORS
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 5 KΩ R2 Typ. = 150 Ω
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
NPN TIP122FP
PNP TIP127FP
V
V
V
I
P
V
T
For PNP types voltage and current values are negative.
March 2003
Collector-Base Voltage (IE = 0) 100 V
CBO
Collector-Emitter Voltage (IB = 0) 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
I
Collector Current 5 A
C
Collector Peak Current (tp < 5 ms) 8 A
CM
I
Base Current 0.1 A
B
Total Dissipation at T
tot
T
Insulation Withstand Voltage (RMS) from All
isol
Three Leads to External Heatsink
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
case
amb
≤ 25 oC
≤ 25 oC
29
2
1500 V
W
W
o
C
o
C
1/6
TIP122FP / TIP127FP
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
4.3
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
I
CBO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (I
= 0)
B
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
* Collector-Emitter
= 50 V 0.5 mA
V
CE
= 100 V 0.2 mA
V
CB
= 5 V 2 mA
V
EB
I
= 30 mA 100 V
C
Sustaining Voltage
(I
= 0)
B
V
* Collector-Emitter
CE(sat)
Saturation Voltage
V
* Base-Emitter Voltage IC = 3 A VCE = 3 V 2.5 V
BE(on)
h
* DC Current Gain IC = 0.5 A VCE = 3 V
FE
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
For PNP types voltage and current values are negative.
IC = 3 A IB = 12 mA
I
= 5 A IB = 20 mA
C
I
= 3 A VCE = 3 V
C
2
4
1000
1000
V
V
Safe Operating Are a Derating Curve
2/6
TIP122FP / TIP127FP
DC Current Gai n (NPN type)
Collector Emitter Sat uration Volt age (NPN ty pe)
DC Current Gain (PNP type)
Collector Emitter Sat uration Volt age (PNP type)
Base Emitter Sat uration Volt age (NPN type)
Base Emitter Satur ation Voltage (PNP ty pe)
3/6
TIP122FP / TIP127FP
Base Emitter On Voltage (NPN type)
Freewheel Diode Forward Voltage (NPN type)
Base Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (PNP ty pe)
Switching Ti me Resistive Load (NPN type) Switching Time resistiv e Load (PNP typ e)
4/6
TO-220FP MECHANICAL DATA
TIP122FP / TIP127FP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
A
B
H
E
D
L3
L6
L7
¯
F1
F
G1
G
F2
123
L2
L4
5/6
TIP122FP / TIP127FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or paten t rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectro nics – Printed in Italy – All Rights Reserved
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