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TIP120/121/122
TIP125/126/127
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■STMicroelectronics PREFERRED SALESTYPES
DESCRIPTION
The TIP120, TIP121 and TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP125, TIP126 and TIP127, respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM |
|
R1 Typ. = 5 KΩ |
R2 Typ. = 150 Ω |
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
|
Value |
|
Unit |
|
|
|
|
|
|
|
|
|
|
NPN |
TIP120 |
TIP121 |
TIP122 |
|
|
|
|
|
|
|
|
|
|
PNP |
TIP125 |
TIP126 |
TIP127 |
|
|
|
|
|
|
|
|
VCBO |
Collector-Base Voltage (IE = 0) |
60 |
80 |
100 |
V |
|
VCEO |
Collector-Emitter Voltage (IB = 0) |
60 |
80 |
100 |
V |
|
VEBO |
Emitter-Base Voltage (IC = 0) |
|
5 |
|
V |
|
IC |
Collector Current |
|
5 |
|
A |
|
|
|
|
|
|
|
|
ICM |
Collector Peak Current |
|
8 |
|
A |
|
|
|
|
|
|
|
|
IB |
Base Current |
|
0.1 |
|
A |
|
|
|
|
|
|
|
|
Ptot |
Total Dissipation at Tcase ≤ 25 oC |
|
65 |
|
W |
|
|
Tamb ≤ 25 oC |
|
2 |
|
W |
|
Tstg |
Storage Temperature |
|
-65 to 150 |
|
oC |
|
Tj |
Max. Operating Junction Temperature |
|
150 |
|
oC |
* For PNP types voltage and current values are negative.
March 2000 |
1/4 |
|
|
TIP120/TIP121/TIP122/TIP125/TIP126/TIP127
THERMAL DATA
Rthj-case |
Thermal |
Resistance |
Junction-case |
Max |
1.92 |
oC/W |
Rthj-amb |
Thermal |
Resistance |
Junction-ambient |
Max |
62.5 |
oC/W |
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol |
Parameter |
Test Conditions |
Min. Typ. Max. |
Unit |
|
ICEO |
Collector Cut-off |
for TIP120/125 |
VCE = 30 V |
0.5 |
mA |
|
Current (IB = 0) |
for TIP121/126 |
VCE = 40 V |
0.5 |
mA |
|
|
for TIP122/127 |
VCE = 50 V |
0.5 |
mA |
|
|
|
|
|
|
ICBO |
Collector Cut-off |
for TIP120/125 |
VCB = 60 V |
0.2 |
mA |
|
Current (IB = 0) |
for TIP121/126 |
VCB = 80 V |
0.2 |
mA |
|
|
for TIP122/127 |
VCB = 100 V |
0.2 |
mA |
|
|
|
|
|
|
IEBO |
Emitter Cut-off Current |
VEB = 5 V |
|
2 |
mA |
|
(IC = 0) |
|
|
|
|
VCEO(sus)* Collector-Emitter |
IC = 30 mA |
|
|
|
|
|
Sustaining Voltage |
for TIP120/125 |
|
60 |
V |
|
(IB = 0) |
for TIP121/126 |
|
80 |
V |
|
|
for TIP122/127 |
|
100 |
V |
|
|
|
|
|
|
VCE(sat)* |
Collector-Emitter |
IC = 3 A |
IB = 12 mA |
2 |
V |
|
Saturation Voltage |
IC = 5 A |
IB = 20 mA |
4 |
V |
|
|
|
|
|
|
VBE(on)* |
Base-Emitter Voltage |
IC = 3 A |
VCE = 3 V |
2.5 |
V |
hFE* |
DC Current Gain |
IC = 0.5 A |
VCE = 3 V |
1000 |
|
|
|
IC = 3 A |
VCE = 3 V |
1000 |
|
Pulsed: Pulse duration = 300 μs, duty cycle < 2 % For PNP types voltage and current values are negative.
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