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COMPLEMENTARY SILICON POWER
■ STMicroelectronics P REF ERRED
SALESTYPES
DESCRIPTION
The TIP120, TIP121 and TIP122 are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in power linear and switching applications.
The complementary PNP types are TIP125,
TIP126 and TIP127, respectively.
TIP120/121/122
TIP125/126/127
DARLINGTON TRANSISTORS
3
2
1
TO-220
INTER NAL SCH E M ATI C DIAG RA M
R1 Typ. = 5 KΩ R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP120 TIP121 TIP122
PNP TIP125 TIP126 TIP127
V
V
V
I
P
T
* For PNP types voltage and current values are negative.
Collector-Base Voltage (IE = 0) 60 80 100 V
CBO
Collector-Emitter Voltage (IB = 0) 60 80 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
I
Collector Current 5 A
C
Collector Peak Current 8 A
CM
Base Current 0.1 A
I
B
Total Dissipation at T
tot
T
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
case
amb
≤ 25 oC
≤ 25 oC
65
2
W
W
o
C
o
C
March 2000
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TIP120/TIP121/TI P122/TIP125/ TIP126/T IP127
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.92
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEO
Collector Cut-off
Current (I
= 0)
B
for TIP120/125 V
for TIP121/126 V
for TIP122/127 V
I
CBO
Collector Cut-off
Current (I
= 0)
B
for TIP120/125 V
for TIP121/126 V
for TIP122/127 V
I
EBO
V
CEO(sus)
Emitter Cut-off Current
(I
= 0)
C
* Collector-Emitter
Sustaining Voltage
(I
= 0)
B
= 5 V 2 mA
V
EB
I
= 30 mA
C
for TIP120/125
for TIP121/126
for TIP122/127
V
* Collector-Emitter
CE(sat)
Saturation Voltage
V
* Base-Emitter Voltage IC = 3 A VCE = 3 V 2.5 V
BE(on)
IC = 3 A IB = 12 mA
I
= 5 A IB = 20 mA
C
hFE* DC Current Gain IC = 0.5 A VCE = 3 V
I
= 3 A VCE = 3 V
C
∗ Pulsed: Pulse duration = 300 µs, duty cycle < 2 %
For PNP types voltage and current values are negative.
= 30 V
CE
= 40 V
CE
= 50 V
CE
= 60 V
CB
= 80 V
CB
= 100 V
CB
60
80
100
1000
1000
0.5
0.5
0.5
0.2
0.2
0.2
2
4
mA
mA
mA
mA
mA
mA
V
V
V
V
V
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TIP120/TIP121/T IP122/T IP125 /TIP126/T IP127
TO-220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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TIP120/TIP121/TI P122/T IP125/ TIP126/T IP127
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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© 2000 STMicroelectro nics – Printed in Italy – All Rights Reserved
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