3 stage RF power amplifier demonstration board using:
Features
■ N-channel enhancement-mode lateral
MOSFETs
■ Excellent thermal stability
■ Frequency: 1030 MHz
■ Supply voltage: 36 V
■ Peak power: 200 W typical
■ Input power: 23 dBm
■ Harmonics < -45 dBc
■ Rise and fall time < 100 ns
■ RoHS compliant
Description
STEVAL-TDR007V1
PD57002-E, PD57018-E, 2 x PD57060-E
The STEVAL-TDR007V1 is a 200 W RF power
amplifier intended for IFF - 1030 MHz interrogator
using PD57002-E + PD57018-E + 2 x PD57060-E
N-channel lateral MOS field-effect transistors.
STEVAL-TDR007V1 is designed in cooperation
with ETSA in France.
Table 1. Device summary
Order code
STEVAL-TDR007V1
March 2009 Rev 2 1/11
www.st.com
11
Contents STEVAL-TDR007V1
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3 Circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
4 Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5 Package mechanical data:
PD57002-E, PD57018-E, PD57060-E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5.1 Mounting indications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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STEVAL-TDR007V1 Electrical data
1 Electrical data
1.1 Maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
T
CASE
DD
I
D
T
A
Supply voltage 36 V
Drain current 1.0 A
Operating case temperature +80 °C
Max. ambient temperature -10 to +50 °C
2 Electrical characteristics
TA = +25 oC, VDD = 36 V, I
Table 3. Electrical specification
Symbol Test conditions Min Typ Max Unit
P
OUT
IRL @ P
I
TOTAL
Rise and
Fall time
Power
droop
Harmonics @ P
1. 1000 µF connected to 36 V supply pin
@ PIN = 23 dBm 52 53 dBm
= 23 dBm -10 dB
IN
@ PIN = 23 dBm 500 600 mA
= 23 dBm 100 ns
@ P
IN
@ PIN = 23 dBm 0.2 1 dB
(1)
= 23 dBm -60 -45 dBc
IN
= 100 mA, Freq. = 1030 MHz, PW = 32 μs, DC = 2.5 %
dq
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Circuit schematic STEVAL-TDR007V1
3 Circuit schematic
Figure 1. Circuit schematic
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