The STEVAL-TDR005V1 is a RF broadband
power amplifier intended for linear or nonlinear
operation over the band 1.8 to 54 MHz using
2x SD2943 gold metallized N-channel MOS fieldeffect transistors. The temperature compensating
biasing circuit supports class B and class AB
operation.
STEVAL-TDR005V1
Table 1.Device summary
Order code
STEVAL-TDR005V1
STEVAL-TDR005V1 is designed in cooperation
with Specific RF Devices (Germany).
Figure 1.Output power vs frequencyFigure 2.Output power vs frequency
Doc ID 14845 Rev 25/11
Photos of STEVAL-TDR005V1 amplifierSTEVAL-TDR005V1
4 Photos of STEVAL-TDR005V1 amplifier
Figure 3.Top view
Figure 4.Side view
6/11Doc ID 14845 Rev 2
STEVAL-TDR005V1STEVAL-TDR005V1 class of operation
5 STEVAL-TDR005V1 class of operation
●Class B: a low bias point with ~100 mA per transistor
●Class AB: a higher bias point with ~ 900 mA per transistor
To select a bias point, STEVAL-TDR005V1 has a control port “BIAS”.
●The bias point is 2x 100 mA if “BIAS” is left open and in this case a DC voltage of ~5 V
is present
●The bias point is 2 x 900 mA if “BIAS” is connected to ground.
"PA_ON" control port / ON-OFF bias current
●To switch-on biasing circuit, connect “PA_ON” to ground.
●To switch-off biasing circuit, left open “PA_ON”
Doc ID 14845 Rev 27/11
SD2943 mounting recommendationsSTEVAL-TDR005V1
6 SD2943 mounting recommendations
6.1 Mounting recommendations
●Ensure holes in heatsinks are free from burrs;
●Minimum depth of tapped holes in heatsinks is 6 mm;
●Use 4-40 UNC-2A cheese-head screws with a flat washer to spread the joint pressure;
●The minimum flatness of the mounting area is 0.02 mm;
●Mounting area roughness should be less than 0.5 µm (micro);
●Avoid, as much as possible, use of flux or flux solutions because flux can penetrate
even when hermetically sealed ceramic-capped transistors. Tin and wash the printedcircuit board BEFORE mounting the power transistors, then solder the transistor leads
without using flux;
●Transistor leads may be tinned by dipping them full-length into a solder bath at a
temperature of about 230 °C. No flux should be used during tinning;
●Recommended heatsink compounds: WPSII (silicon free) from austerlitz electronics,
340 from down corning etc.
6.2 Mounting sequence
●Apply a thin layer of evenly distributed heatsink compound to the flange;
●Position the device with flat washers in place;
●Tighten the screws until finger tight (0.05 Nm);
●Further tighten the screws until the specified torque is reached;
●For M174, M177 and M244 type of packages, torque should be minimum 0.6 Nm and
0.75 Nm max.
8/11Doc ID 14845 Rev 2
STEVAL-TDR005V1SD2943 mounting recommendations
Table 4.DMOS packages - list of materials
Package
Typ e
M174
M174
(Moly
disk)
M177
M244
Description Flange Leadframe
0.500 DIA
4L NON
HERM
W/FLANGE
0.500 DIA
4L NON
HERM
W/FLANGE
(MOLY
DISK)
0.550 DIA
4L NON
HERM
W/FLANGE
2x
0.400x0.425
WIDE 2L
LAP N/H
FLANGE
Cu
Cu-Mo-
Cu
Cu-Mo-
Cu
(85%) -
Cu
(15%)
W
ALLOY 42
(Fe58 /
Ni42)
ALLOY 42
(Fe58 /
Ni42)
ALLOY 42
(Fe58 /
Ni42)
ALLOY 42
(Fe58 /
Ni42)
Ceramic
insulator
BeO
(99.5%
min)
BeO
(99.5%
min)
BeO
(99.5%
min)
BeO
(99.5%
min)
Plating Torque (Nm)
Leads Flange MinMax
Au (100µ min) over
Ni (100µ min /
350µ max)
Au (100µ min) over
Ni (100µ min /
350µ max)
Au (60µ min) over
Ni (100µ min /
350µ max)
Au (60µ min) over
Ni (100µ min /
350µ max)
Ni(100µ min) + Pd
(10µ min)
Ni(100µ min) + Pd
(10µ min)
Au (100µ min)
over Ni (100µ min
/ 350µ max)
Au (60µ min) over
Ni (100µ min /
350µ max)
0.60.75
0.60.75
0.60.75
0.60.75
Doc ID 14845 Rev 29/11
Revision historySTEVAL-TDR005V1
7 Revision history
Table 5.Document revision history
DateRevisionChanges
01-Jul-20081Initial release.
18-Mar-20102Updated description on cover page.
10/11Doc ID 14845 Rev 2
STEVAL-TDR005V1
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