RF power amplifier demonstration board using two
SD2933 N-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Frequency: 1.6 - 54 MHz
■ Supply voltage: 48 V
■ Output power: 400 W (typ.)
■ Input power 10 W max.
■ Efficiency: 57 % - 76 %
■ IMD at 300 WPEP < -26 dBc
■ Load mismatch: 3:1 (all phases)
Description
The STEVAL-TDR004V1 demonstration board is
an RF broadband power amplifier intended for
linear or nonlinear operation over the 1.6 to 54
MHz band, using two SD2933 gold metallized Nchannel MOS field-effect transistors. The
temperature compensating biasing circuit
supports class B and class AB operation.
STEVAL-TDR004V1 is designed in cooperation
with Specific RF Devices (Germany).
STEVAL-TDR004V1
Table 1. Device summary
Order code
STEVAL-TDR004V1
March 2010 Doc ID 17341 Rev 1 1/12
www.st.com
12
Contents STEVAL-TDR004V1
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 STEVAL-TDR004V1 amplifier photos . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 STEVAL-TDR004V1 class of operation . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 SD2933 mounting recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6.1 Mounting recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6.2 Mounting sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 17341 Rev 1
STEVAL-TDR004V1 Electrical data
1 Electrical data
1.1 Maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
P
IN
P
OUT
(1)
V
DD
V
GG
I
DD
P
DISS
1. VGG from 9 to 15 V and PIN < 16 W
Input power 16 W
Output power 500 W
Drain supply voltage 50 V
Gate biasing voltage 15 V
Drain current 20 A
Power dissipation 400 W
Doc ID 17341 Rev 1 3/12
Electrical characteristics STEVAL-TDR004V1
2 Electrical characteristics
TA = +25 ºC, VDD = 48 V, I
= 2 x 900 mA
DQ
Table 3. Electrical specification
Symbol Test conditions Min. Typ. Max. Unit
Freq Frequency range 1.6 54 MHz
P
OUT
Gain P
ND P
H2 2
H3 3
VSWR Load mismatch all phases @ P
PIN = 10 W 300 400 W
= 10 W 16.2 ± 0.6dB dB
IN
= 10 W 57 - 76 %
IN
ND
Harmonic @ P
RD
Harmonic @ P
= 300 W -26 / -49 dBc
OUT
= 300 W -13 / -58 dBc
OUT
= 300 W 3:1
OUT
4/12 Doc ID 17341 Rev 1
STEVAL-TDR004V1 Typical performance
)
3 Typical performance
Figure 1. Output power and efficiency
60
59
58
57
56
55
54
53
Output Power (dBm)
52
51
50
vs. frequency
- eff
- Pout
Vdd =
40V
Id q = 2x
0 5 10 15 20 25 30 35 40 45 50 55 60 65
F requency (MHz)
90
Pin = 10W
mA
100
90
80
70
60
50
40
30
20
10
0
Figure 2. Output power and efficiency
vs. frequency
60
59
58
57
56
55
54
Eff iciency (%
53
Output Power (dBm)
52
51
50
0 5 10 15 20 25 30 35 40 45 50 55 60 65
- eff
- Pout
Vdd =
Idq = 2x
Frequency (MHz)
48V
900
Pin = 10W
mA
100
90
80
70
60
50
40
30
20
10
0
Efficiency (%)
Figure 3. IMD vs. frequency Figure 4. Output power vs. drain voltage
0
-5
-10
-15
-20
IMD (dBc)
-25
-30
-35
-40
0 5 10 15 20 25 30 35 40 45 50 55 60 65
IMD
Frequency (MHz)
Vdd =
48V
Idq = 2x
900
Pout = 300 WPEP
mA
600
500
400
300
200
Output Power (W)
100
0
10 14 18 22 26 30 34 38 42 46 50
Pin = 10W
Idq = 2x
1.6 M Hz 5 M Hz 10 M Hz 20 MHz
28 MHz 40 MHz 60 MHz
mA
900
Drain voltage (V)
Doc ID 17341 Rev 1 5/12
Typical performance STEVAL-TDR004V1
Figure 5. Harmonics vs. frequency
0
Vdd =
-10
-20
I dq = 2x
Pout = 300 WPEP
48V
900
mA
-30
-40
-50
Harmon ics ( d Bc)
-60
-70
0 5 10 15 20 25 30 35 40 45 50 55 60 65
H2 H3
Freque ncy (MHz)
6/12 Doc ID 17341 Rev 1
STEVAL-TDR004V1 STEVAL-TDR004V1 amplifier photos
4 STEVAL-TDR004V1 amplifier photos
Figure 6. Top view
Figure 7. Side view
Doc ID 17341 Rev 1 7/12
STEVAL-TDR004V1 class of operation STEVAL-TDR004V1
5 STEVAL-TDR004V1 class of operation
● class B: a low bias point with ~100 mA per transistor
● class AB: a higher bias point with ~ 900 mA per transistor
To select a bias point, the STEVAL-TDR004V1 features a “BIAS” control port.
● The bias point is 2 x 100 mA if “BIAS” is left open. In this case a DC voltage of ~5 V is
present
● The bias point is 2 x 900 mA if “BIAS” is connected to ground.
"PA_ON" control port / ON-OFF bias current
● To switch on the biasing circuit, connect “PA_ON” to ground.
● To switch off the biasing circuit, leave “PA_ON” open.
8/12 Doc ID 17341 Rev 1
STEVAL-TDR004V1 SD2933 mounting recommendations
6 SD2933 mounting recommendations
6.1 Mounting recommendations
● Ensure the holes in the heat sinks are free from burrs
● The minimum depth of tapped holes in heat sinks is 6 mm
● Use 4-40 UNC-2A cheese-head screws with a flat washer to more evenly distribute the
joint pressure
● The minimum flatness of the mounting area is 0.02 mm
● Mounting area roughness should be less than 0.5 µm (micro)
● Avoid, as much as possible, the use of flux or flux solutions, as they can penetrate even
hermetically sealed ceramic-capped transistors. Tin and wash the printed circuit board
BEFORE mounting the power transistors, then solder the transistor leads without using
flux
● Transistor leads may be tinned by dipping them full-length into a solder bath at a
temperature of about 230 °C. No flux should be used during tinning
● Recommended heat sink compounds: WPSII (silicon-free) from Austerlitz Electronics,
340 from Dow Corning, etc.
6.2 Mounting sequence
● Apply a thin layer of evenly distributed heat sink compound to the flange
● Position the device with flat washers in place
● Tighten the screws until finger tight (0.05 Nm)
● Further tighten the screws until the specified torque is reached
● For M174, M177 & M244 package types, torque should be a minimum of 0.6 Nm, and a
maximum of 0.75 Nm.
Doc ID 17341 Rev 1 9/12
SD2933 mounting recommendations STEVAL-TDR004V1
Table 4. DMOS packages - list of materials
Package
type
M174
M174
(Moly
disk)
M177
M244
Description Flange Leadframe
0.500 DIA
4L NON
HERM
W/FLANGE
0.500 DIA
4L NON
HERM
W/FLANGE
(MOLY
DISK)
0.550 DIA
4L NON
HERM
W/FLANGE
2x
0.400x0.425
WIDE 2L
LAP N/H
FLANGE
Cu
Cu-Mo-
Cu
Cu-Mo-
Cu
(85%) -
Cu
(15%)
W
ALLOY 42
(Fe58 /
Ni42)
ALLOY 42
(Fe58 /
Ni42)
ALLOY 42
(Fe58 /
Ni42)
ALLOY 42
(Fe58 /
Ni42)
Ceramic
insulator
BeO
(99.5%
min)
BeO
(99.5%
min)
BeO
(99.5%
min)
BeO(99.5
% min)
Plating Torque (Nm)
Leads Flange Min Max
Au (100 µ min)
over Ni (100 µ min /
350 µ max)
Au (100 µ min)
over Ni (100 µ min /
350 µ max)
Au (60 µ min) over
Ni (100 µ min /
350 µ max)
Au (60 µ min) over
Ni (100 µ min /
350 µ max)
Ni(100 µ min) +
Pd (10 µ min)
Ni(100 µ min) +
Pd (10 µ min)
Au (100 µ min)
over Ni (100 µ min
/ 350 µ max)
Au (60 µ min) over
Ni (100 µ min /
350 µ max)
0.6 0.75
0.6 0.75
0.6 0.75
0.6 0.75
10/12 Doc ID 17341 Rev 1
STEVAL-TDR004V1 Revision history
7 Revision history
Table 5. Document revision history
Date Revision Changes
31-Mar-2010 1 Initial release.
Doc ID 17341 Rev 1 11/12
STEVAL-TDR004V1
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