ST TDE1897R, TDE1898R User Manual
TDE1897R
®
INDUSTRIAL INTELLIGENT POWER SWITCH
0.5A OUTPUT CURRENT
18V TO 35V SUPPLY VOLTAGE RANGE
INTERNAL CURRENT LIMITING
THERMAL SHUTDOWN
OPEN GROUND PROTECTION
INTERNAL NEGATIVE VOLTAGE CLAMPING
TO V
- 45V FOR FAST DEMAGNETIZATION
S
DIFFERENTIAL INP UTS WITH LARGE COMMON MODE RANGE AND THRESHOLD
HYSTERESIS
UNDERVOLTAGE LOCKOUT WITH HYSTERESIS
OPEN LOAD DETECTION
TWO DIAGNOSTIC OUTPUTS
OUTPUT STATUS LED DRIVER
DESCRIPTION
The TDE1897R/TDE1898R is a monolithic Intelligent Power Switch in Multipower BCD Technol-
BLOCK DIAGRAM
TDE1898R
0.5A HIGH-SIDE DRIVER
MULTIPOWER BCD TECHNOLOGY
Minidip SIP9 SO20
ORDERING NUMBERS:
TDE1897RDP TDE1898RSP TDE1897RFP
TDE1898RDP TDE1898RFP
ogy, for driving inductive or resistive loads. An internal Clamping Diode enables the fast demagnetization of inductive loads.
Diagnostic for CPU feedback and extensive use
of electrical protections make this device inherently indistructible and suitable for general purpose industrial applications.
September 2003
This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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TDE1897R - TDE1898R
PIN CONNECTIONS
SIP9
(Top view)
Minidip
SO20
ABSOLUTE MAXIMUM RATINGS
(Minidip pin reference)
Symbol Parameter Value Unit
Supply Voltage (Pins 3 - 1) (TW < 10ms) 50 V
V
S
VS – V
V
V
I
I
O
E
P
tot
T
op
T
stg
Supply to Output Differential Voltage. See also VCl 3-2 (P i ns 3 - 2) internally limited V
O
Input Voltage (Pins 7/8) -10 to VS +10 V
i
Differential Input Voltage (Pins 7 - 8) 43 V
i
Input Current (Pins 7/8) 20 mA
i
Output Current (Pins 2 - 1). See also ISC internally limited A
Energy from Inductive Load (TJ = 85°C) 200 mJ
l
Power Dissipation. See also THERMAL CHARACTERISTICS. internally limited W
Operating Temperature Range (T
) -25 to +85 °C
amb
Storage Temperature -55 to 150 °C
THERMAL DATA
Symbol Description Minidip Sip SO20 Unit
Thermal Resistance Junction-case Max. 10 °C/W
Thermal Resistance Junction-ambient Max. 100 70 90 °C/W
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R
th j-case
R
th j-amb
TDE1897R - TDE1898R
ELECTRICAL CHARACTERISTICS
= 24V; T
(V
S
= –25 to +85°C, unless otherwise specified)
amb
Symbol Parameter Test Condition Min. Typ. Max. Unit
3 Supply Voltage for Valid
V
smin
I
> 0.5mA @ V
diag
= 1.5V 9 35 V
dg1
Diagnostics
V
3 Supply Voltage (operative) 18 24 35 V
s
3 Quiescent Current
I
q
V
sth1
V
sth2
V
shys
I
sc
V
3-2 Output Voltage Drop @ I
don
I
oslk
I
= I
= 0
out
os
Undervoltage Threshold 1 (See fig. 1); T
3 Undervoltage Threshold 2 (See fig. 1); Tamb = 0 to +85°C15.5V
Supply Voltage Hysteresis (See fig. 1); T
Short Circuit Current VS = 18 to 35V; RL = 1Ω 0.75 1.5 A
2 Output Leakage Current @ Vi = Vil , Vo = 0V 300 µA
Vol 2 Low State Out Voltage @ Vi = Vil; RL =
3-2 Internal Voltage Clamp (VS - VO)@ IO = -500mA 45 55 V
V
cl
I
2 Open Load Detection Current Vi = Vih; T
old
7-8 Common Mode Input Voltage
V
id
Range (Operative)
7-8 Input Bias Current Vi = –7 to 15V; –In = 0V –700 700 µA
I
ib
V
7-8 Input Threshold Voltage V+In > V–In 0.8 1.4 2 V
ith
7-8 Input Threshold Hysteresis
V
iths
V
il
Vih
amb
amb
= 625mA; Tj = 25°C
out
@ I
= 625mA; Tj = 125°C
out
= 0 to +85°C 0.5 9.5 mA
amb
VS = 18 to 35V,
V
- Vid 7-8 < 37V
S
= 0 to +85°C11 V
= 0 to +85°C 0.4 1 3 V
∞
–7 15 V
2.5
4.5
250
400
4
7.5
425
600
0.8 1.5 V
V+In > V–In 50 400 mV
Voltage
R
7-8 Diff. Input Resistance @ 0 < +In < +16V; –In = 0V
id
@ –7 < +In < 0V; –In = 0V
I
7-8 Input Offset Current V+In = V–In +Ii
ilk
0V < V
<5.5V –Ii
i
–In = GND +Ii
0V < V+In <5.5V –Ii –250
+In = GND +Ii
0V < V–In <5.5V –Ii
2 Output Status Threshold 1
V
oth1
(See fig. 1) 12 V
–20
–75 –25
–100
–50
400
150
+10
–125
–30
–15
+20 µA
+50 µA
Voltage
V
oth2 2
Output Status Threshold 2
(See fig. 1) 9 V
Voltage
2 Output Status Threshold
V
ohys
(See fig. 1) 0.3 0.7 2 V
Hysteresis
I
4 Output Status Source Current V
osd
V
3-4 Active Output Status Driver
osd
Drop Voltage
4 Output Status Driver Leakage
I
oslk
Current
V
5/6 Diagnostic Drop Voltage D1 / D2 = L @ I
dgl
5/6 Diagnostic Leakage Current D1 / D2 =H @ 0 < Vdg < V
I
dglk
> V
out
, Vos = 2.5V 2 4 mA
oth1
Vs – Vos @ Ios = 2mA;
T
= -25 to 85°C
amb
V
< V
out
V
= 18 to 35V
S
D1 / D2 = L @ I
, Vos = 0V
oth2
= 0.5mA
diag
= 3mA
diag
5V
25 µA
250
1.5
s
25 µA
VS = 15.6 to 35V
V
5/6-3 Clamping Diodes at the
fdg
@ I
= 5mA; D1 / D2 = H 2 V
diag
Diagnostic Outputs.
Voltage Drop to V
Note
Vil
< 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference.
All test not dissipative.
S
mA
mA
mV
mV
KΩ
KΩ
µA
µA
µA
µA
mV
V
3/12
TDE1897R - TDE1898R
SOURCE DRAIN NDMOS DIODE
Symbol Parameter Test Condition Min. Typ. Max. Unit
2-3 Forward On Voltage @ I
V
fsd
2-3 Forward Peak Current t = 10ms; d = 20% 2 A
I
fp
t
2-3 Reverse Recovery Time If = 625mA di/dt = 25A/µs 200 ns
rr
2-3 Forward Recovery Time 50 ns
t
fr
THERMAL CHARACTERISTICS (*)
Θ Lim Junction Temp. Protect. 135 150 °C
T
H
SWITCHING CHARACTERISTICS
Thermal Hysteresis 30 °C
= 24V; RL = 48Ω) (*)
(V
S
= 625mA 1 1.5 V
fsd
t
on
t
off
t
d
Turn on Delay Time 100 µs
Turn off Delay Time 20 µs
Input Switching to Diagnostic
100 µs
Valid
Note
Vil
< 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference. (*) Not tested.
Figure 1
DIAGNOSTIC TRUTH TABLE
Diagnostic Conditions Input Output Diag1 Diag2
Normal Operation L
H
< I
Open Load Condition (I
)L
o
old
H
Short to V
L
S
H
Short Circuit to Ground (I
TDE1898R
= ISC) (**) TDE1897R
O
H <H (*) H L
HH
Output DMOS Open L
H
Overtemperature L
H
Supply Undervoltage (V
ply voltage; V
(*) According to the intervention of the current limiting block.
(**) A cold lamp filament, or a capacitive load may activate the current limiting circuit of the IPS, when the IPS is initially turned on. TDE1897
uses Diag2 to signal such condition, TDE1898 does not.
S
< V
< V
S
in the rising phase of the supply voltage)
sth2
in the falling phase of the sup-
sth1
L
H
L
H
L
H
H
H
L
L
L
L
L
L
L
H
H
H
L
L
L
H
H
H
L
H
H
L
L
H
H
H
H
H
H
H
H
H
H
L
L
L
L
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