The TDA7296 is a monolithic integrated circuit in
Multiwatt15 package, intended for use as audio
class AB amplifier in Hi-Fi field applications (Home
Stereo, self powered loudspeakers, Topclass TV).
Figure 2. Typical Application and Test Circuit
gure 1. Package
Multiwatt15V
Multiwatt15H
(Short Leads)
Table 1. Order Codes
Part NumberPackage
TDA7296Multiwatt15V
TDA7296HSMultiwatt15H (Short Leads)
Thanks to the wide voltage range and to the high
out current capability it is able to supply the highest power into both 4Ω and 8Ω loads even in presence of poor supply regulation, with high Supply
Voltage Rejection.
The built in muting function with turn on delay simplifies the remote operation avoiding switching onoff noises.
VM
VSTBY
February 2005
+VsC7 100nFC6 1000µF
R3 22K
C2
R2
22µF
680Ω
C1 470nF
R1 22K
R5 10K
R4 22K
C3 10µFC4 10µF
Note: The Boucherot cell R6, C10, normally not necessary for a stable operation it could
be needed in presence of particular load impedances at V
IN-2
IN+
IN+MUTE
MUTE
STBY
3
4
10
MUTE
9
STBY
1
STBY-GND
713
-
+
THERMAL
SHUTDOWN
-Vs-PWVs
C9 100nFC8 1000µF
<±25V.
S
+PWVs+Vs
PROTECTION
158
-Vs
S/C
14
OUT
C5
22µF
6
BOOTSTRAP
D93AU011
R6
2.7Ω
C10
100nF
Rev. 10
1/15
TDA7296
Figure 3. Pin Connection
Table 2. Absolute Maximum Ratings
SymbolParameterValueUnit
V
I
O
P
tot
T
op
T
stg
Supply Voltage (No Signal)±35V
S
Output Peak Current5A
Power Dissipation T
= 70°C50W
case
Operating Ambient Temperature Range0 to 70°C
, TjStorage and Junction Temperature150°C
Table 3. Thermal Data
SymbolParameterTyp.MaxUnit
R
th j-case
Thermal Resistance Junction-case11.5°C/W
Figure 4. Block Diagram
2/15
TDA7296
Table 4. Electrical Characteristcs (Refer to the Test Circuit VS = ±24V, RL = 8Ω, GV = 30dB; Rg = 50Ω;
= 25°C, f = 1 kHz; unless otherwise specified).
T
amb
SymbolParameterTest ConditionMin. Typ.Max.Unit
V
V
I
P
SRSlew Rate710V/µs
G
G
f
L ,fH
SVRSupply Voltage Rejectionf = 100Hz; V
STAND-BY FUNCTION (Ref: -Vs or GND)
V
ST on
V
ST off
AT T
I
q st-by
MUTE FUNCTION (Ref: -Vs ro GND)
V
V
AT T
Note (*):
MUSIC POWER is the maximal power which the amplifier is capable of producing across the rated load resistance (regardless of non linearity)
1 sec after the application of a sinusoidal input signal of frequency 1KHz.
Supply Range±10±35V
S
I
Quiescent Current203065mA
q
I
Input Bias Current500nA
b
Input Offset Voltage-1010mV
OS
Input Offset Current-100100nA
OS
RMS Continuous Output
O
Power
Music Power (RMS)
∆t = 1s (*)
dTotal Harmonic Distortion (**)P
d = 05%
= ± 24V, RL = 8Ω;
V
S
V
= ± 21V, RL = 6Ω;
S
VS = ± 18V, RL = 4Ω;
d = 10%
= ± 29V, RL = 8Ω;
V
S
V
= ± 24V, RL = 6Ω;
S
V
= ± 22V, RL = 4Ω;
S
= 5W; f = 1kHz
O
27
27
27
30
30
30
60
60
60
0.005
PO = 0.1 to 20W; f = 20Hz to 20kHz
V
= ± 18V, RL = 4Ω;
S
PO = 5W; f = 1kHz
P
= 0.1 to 20W; f = 20Hz to 20kHz
O
Open Loop Voltage Gain80dB
V
Closed Loop Voltage Gain (1)243040dB
V
e
Total Input NoiseA = curve1µV
N
0.01
f = 20Hz to 20kHz25µV
frequency response (-3dB)PO =1W20Hz to 20kHz
R
Input Resistance100kΩ
i
= 0.5Vrms6075dB
ripple
T
Thermal Shutdown145°C
S
Stand-by on Threshold1.5V
Stand-by off Threshold3.5V
Stand-by Attenuation7090dB
st-by
Quiescent Current @ Stand-by13mA
Mute on Threshold1.5V
Mon
Mute off Threshold3.5V
Moff
Mute AttenuatIon6080dB
mute
0.1
0.1
W
W
W
W
W
W
%
%
%
Note (**): Tested with optimized Application Board (see fig.5)
3/15
TDA7296
Figure 5. P.C.B. and Components Layout of the Circuit of figure 2.
Note:
The Stand-by and Mute functions can be referred either to GND or -VS.
On the P.C.B. is possible to set both the configuration through the jumper J1.
4/15
TDA7296
3APPLICATION SUGGESTIONS
(see Test and Application Circuits of the Fig. 2)
The recommended values of the external components are those shown on the application circuit of Figure
2. Different values can be used; the following table can help the designer.
COMPONENTS
R1 (*)22kInput ResistanceIncrease Input
R2680ΩClosed Loop Gain
R3 (*)22kIncrease of GainDecrease of Gain
R422kSt-by Time ConstantLarger St-by
R510kMute Time ConstantLarger Mute
C10.47µFInput DC DecouplingHigher Low Frequency
C222µFFeedback DC
C310µFMute Time ConstantLarger Mute
C410µFSt-by Time ConstantLarger St-by
C522µFBootstrappingSignal Degradation at
SUGGESTED
VALUE
PURPOSE
Set to 30db (**)
Decoupling
LARGER THAN
SUGGESTED
Impedance
Decrease of GainIncrease of Gain
ON/OFF Time
ON/OFF Time
ON/OFF Time
ON/OFF Time
SMALLER THAN
SUGGESTED
Decrease Input
Impedance
Smaller St-by ON/OFF
Time; Pop Noise
Smaller Mute
ON/OFF Time
Higher Low Frequency
Smaller Mute ON/OFF
Smaller St-by ON/OFF
Time; Pop Noise
Low Frequency
Cutoff
Cutoff
Time
C6, C81000µFSupply Voltage BypassDanger of Oscillation
C7, C90.1µFSupply Voltage BypassDanger of Oscillation
(*) R1 = R3 for pop optimization
(**) Closed Loop Gain has to be ≥ 24dB
5/15
TDA7296
4TYPICAL CHARACTERISTICS
(Application Circuit of fig 2 unless otherwise specified)
Figure 6. : Output Power vs. Supply Voltage.
Figure 9. Distortion vs. Output Power
Figure 7. Distortion vs. Output Power
Figure 8. Output Power vs. Supply Voltage
Figure 10. Distortion vs. Frequency
Figure 11. Distortion vs. Frequency
6/15
TDA7296
Figure 12. Quiescent Current vs. Supply
Voltage
Figure 13. Supply Voltage Rejection vs.
Frequency
Figure 15. St-by Attenuation vs. V
pin9
Figure 16. Power Dissipation vs. Output Power
Figure 14. Mute Attenuation vs. V
pin10
Figure 17. Power Dissipation vs. Output Power
7/15
TDA7296
5INTRODUCTION
In consumer electronics, an increasing demand has arisen for very high power monolithic audio amplifiers
able to match, with a low cost the performance obtained from the best discrete designs.
The task of realizing this linear integrated circuit in conventional bipolar technology is made extremely difficult by the occurence of 2nd breakdown phenomenon. It limits the safe operating area (SOA) of the power devices, and as a consequence, the maximum attainable output power, especially in presence of highly
reactive loads. Moreover, full exploitation of the SOA translates into a substantial increase in circuit and
layout complexity due to the need for sophisticated protection circuits.
To overcome these substantial drawbacks, the use of power MOS devices, which are immune from secondary breakdown is highly desirable. The device described has therefore been developed in a mixed bipolar-MOS high voltage technology called BCD 80.
5.1 Output Stage
The main design task one is confronted with while developing an integrated circuit as a power operational
amplifier, independently of the technology used, is that of realising the output stage. The solution shown
as a principle schematic by Fig 18 represents the DMOS unity-gain output buffer of the TDA7296.
This large-signal, high-power buffer must be capable of handling extremely high current and voltage levels
while maintaining acceptably low harmonic distortion and good behaviour over frequency response; moreover, an accurate control of quiescent current is required.
A local linearizing feedback, provided by differential amplifier A, is used to fullfil the above requirements,
allowing a simple and effective quiescent current setting. Proper biasing of the power output transistors
alone is however not enough to guarantee the absence of crossover distortion. While a linearization of the
DC transfer characteristic of the stage is obtained, the dynamic behaviour of the system must be taken
into account.
A significant aid in keeping the distortion contributed by the final stage as low as possible is provided by
the compensation scheme, which exploits the direct connection of the Miller capacitor at the amplifier’s
output to introduce a local AC feedback path enclosing the output stage itself.
5.2 Protections
In designing a power IC, particular attention must be reserved to the circuits devoted to protection of the
device from short circuit or overload conditions.
Due to the absence of the 2nd breakdown phenomenon, the SOA of the power DMOS transistors is delimited only by a maximum dissipation curve dependent on the duration of the applied stimulus.
In order to fully exploit the capabilities of the power transistors, the protection scheme implemented in this
device combines a conventional SOA protection circuit with a novel local temperature sensing technique
which " dynamically" controls the maximum dissipation.
Figure 18. Principle Schematic of a DMOS Unity-gain Buffer.
8/15
Figure 19. Turn ON/OFF Suggested Sequence
+Vs
(V)
+35
-35
-Vs
V
IN
(mV)
V
ST-BY
PIN #9
(V)
5V
TDA7296
V
MUTE
PIN #10
(V)
I
P
(mA)
V
OUT
(V)
5V
OFF
ST-BY
PLAY
MUTEMUTE
ST-BYOFF
D93AU013
In addition to the overload protection described above, the device features a thermal shutdown circuit
which initially puts the device into a muting state (@ Tj = 145°C) and then into stand-by (@ Tj = 150°C).
Full protection against electrostatic discharges on every pin is included.
5.3 Other Features
The device is provided with both stand-by and mute functions, independently driven by two CMOS logic
compatible input pins.
The circuits dedicated to the switching on and off of the amplifier have been carefully optimized to avoid
any kind of uncontrolled audible transient at the output.
The sequence that we recommend during the ON/OFF transients is shown by Figure 19.
The application of figure 20 shows the possibility of using only one command for both st-by and mute functions. On both the pins, the maximum applicable range corresponds to the operating supply voltage.
9/15
TDA7296
Figure 20. Single Signal ST-BY/MUTE Control Circuit
MUTE/
20K
ST-BY
10K30K
MUTESTBY
1N4148
10µF10µF
D93AU014
6BRIDGE APPLICATION
Another application suggestion is the BRIDGE configuration, where two TDA7296 are used, as shown by
the schematic diagram.
In this application, the value of the load must not be lower than 8 Ohm for dissipation and current capability
reasons. A suitable field of application includes HI-FI/TV subwoofers realizations. The main advantages
offered by this solution are:
– High power performances with limited supply voltage level.
– Considerably high output power even with high load values (i.e. 16 Ohm).
The characteristics shown by figures 23 and 24, measured with loads respectively 8 Ohm and 16 Ohm.
With R
±24V the maximum Pout is 60W.
Figure 21. Bridge Application Circuit
= 8 Ohm, Vs = ±18V the maximum output power obtainable is 60W, while with Rl=16 Ohm, Vs =
l
+Vs
Vi
ST-BY/MUTE
10K30K
20K
22µF
1N4148
0.56µF22K
2200µF0.22µF
3
22K0.56µF
1
4
10
9
9
10
22µF
3
1
4
137
+
-
158
+
-
137
815
6
14
2
2200µF
6
14
2
22µF
22K
680
22K
-Vs
0.22µF
22µF
22K
680
D93AU015A
10/15
TDA7296
Figure 22. Frequency Response of the Bridge
Application
Figure 23. Distortion vs. Output Power
Figure 24. Distortion vs. Output Power
11/15
TDA7296
Figure 25. Multiwatt15V Mechanical Data & Package Dimensions
September 20049Added Package Multiwatt15 Horizontal (Short leads)
February 200510Corrected mistyping error in Table 2.
14/15
TDA7296
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