connected in parallel to drive very low
impedances)
= ±40 V)
S
TDA7293
with mute and standby
Multiwatt15V
class AB amplifier in Hi-Fi field applications, such
as home stereo, self powered loudspeakers and
Topclass TV. Thanks to the wide voltage range
and to the high output current capability it is able
to supply the highest power into both 4-Ω and 8-Ω
loads.
The built-in muting function with turn-on delay
simplifies the remote operation avoiding on-off
switching noises.
Parallel mode is possible by connecting several
devices and using pin11. High output power can
be delivered to very low impedance loads, so
optimizing the thermal dissipation of the system
Table 1.Device summary
Multiwatt15H
Description
The TDA7293 is a monolithic integrated circuit in
Multiwatt15 package, intended for use as audio
ESD maximum withstanding voltage range,
test condition CDF-AEC-Q100-002- ”Human body
±1500V
model”
2.2 Thermal data
Table 3.Thermal data
SymbolParameterMinTypMaxUnit
R
thj-case
4/21Doc ID 6744 Rev 8
Thermal resistance junction to case -11.5°C/W
TDA7293Electrical specifications
2.3 Electrical characteristics
The specifications given here were obtained with the conditions VS = ±40 V, RL = 8 Ω,
R
=50Ω, T
g
Table 4.Electrical characteristics
.
SymbolParameterTest conditionsMinTypMaxUnit
= 25 °C, f = 1 kHz unless otherwise specified.
amb
V
S
I
q
I
bInput bias current--0.31µA
V
OS
I
OS
P
O
dTotal harmonic distortion
I
SC
Supply range-±12-±50V
Quiescent current--50100mA
Input offset voltage--10-10mV
Input offset current---0.2µA
Continuous output power
(1)
Current limiter thresholdV
d = 1%, R
= ±29 V
V
S
d = 10%, R
= ±29 V
V
S
= 5 W, f = 1 kHz-0.005-%
P
O
= 0.1 to 50 W,
P
O
f = 20 Hz to 15 kHz
≤±40 V-6.5-A
S
= 4 Ω,
L
= 4Ω,
L
75
90
80
80
100
100
-W
-W
--0.1%
SRSlew rate-510-V/µs
G
V
G
V
Open loop voltage gain--80-dB
Closed loop voltage gain
(2)
-293031dB
A = curve-1-µV
e
N
R
i
SVRSupply voltage rejection
Total input noise
f = 20 Hz to 20 kHz-310µV
Input resistance-100--kΩ
f = 100 Hz,
= 0.5 V RMS
V
ripple
-75-dB
Device mutes-150-°C
T
S
Thermal protection
Device shuts down-160-°C
Standby function (ref. to to pin 1)
V
ST on
V
ST off
AT T
I
q st-by
st-by
Standby on threshold---1.5V
Standby off threshold-3.5--V
Standby attenuation-7090-dB
Quiescent current @ standby--0.51mA
Mute function (ref. to pin 1)
V
Mon
V
Moff
AT T
mute
Mute on threshold---1.5V
Mute off threshold-3.5--V
Mute attenuatIon-6080-dB
Doc ID 6744 Rev 85/21
Electrical specificationsTDA7293
Table 4.Electrical characteristics (continued)
SymbolParameterTest conditionsMinTypMaxUnit
Clip detector
DutyDuty cycle ( pin 5)
I
CLEAK
-P
d = 1%,
R
PULLUP
= 10 kΩ to 5 V
d = 10%,
R
= 10 kΩ to 5 V
PULLUP
= 50 W--3µA
O
-10-%
304050%
Slave function pin 4 (ref. to pin 8)
V
Slave
V
Master
1. Tested with optimized applications board (see fig. 3)
2. G
Vmin
Slavethreshold---1V
Master threshold-3--V
≥ 26dB
Note:Pin 11 only for modular connection. Max external load 1 MΩ / 10 pF, only for test purposes
Figure 3.Typical application PCB and component layout
6/21Doc ID 6744 Rev 8
TDA7293Circuit description
3 Circuit description
In consumer electronics, an increasing demand has arisen for very high power monolithic
audio amplifiers able to match, with a low cost, the performance obtained from the best
discrete designs.
The task of realizing this linear integrated circuit in conventional bipolar technology is made
extremely difficult by the occurence of 2nd breakdown phoenomenon. It limits the safe
operating area (SOA) of the power devices, and, as a consequence, the maximum
attainable output power, especially in presence of highly reactive loads.
Moreover, full exploitation of the SOA translates into a substantial increase in circuit and
layout complexity due to the need of sophisticated protection circuits.
To overcome these substantial drawbacks, the use of power MOS devices, which are
immune from secondary breakdown is highly desirable.
The device described has therefore been developed in a mixed bipolar-MOS high voltage
technology called BCDII 100/120.
3.1 Output Stage
The main design task in developping a power operational amplifier, independently of the
technology used, is that of realization of the output stage.
The solution shown as a principle shematic by Fig6 represents the DMOS unity - gain output
buffer of the TDA7293.
Figure 4.Schematic of a DMOS unity-gain buffer
This large-signal, high-power buffer must be capable of handling extremely high current and
voltage levels while maintaining acceptably low harmonic distortion and good behaviour
over frequency response; moreover, an accurate control of quiescent current is required.
A local linearizing feedback, provided by differential amplifier A, is used to fullfil the above
requirements, allowing a simple and effective quiescent current setting. Proper biasing of
the power output transistors alone is however not enough to guarantee the absence of
crossover distortion.
Doc ID 6744 Rev 87/21
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