120-volt, 100-watt, DMOS audio amplifier
(**)
Features
Multipower BCD technology
Very high operating voltage range (±50 V)
DMOS power stage
High output power (100 W into 8 Ω
@ THD =10%, with V
Muting and stand-by functions
No switch on/off noise
Very low distortion
Very low noise
Short-circuit protected (with no input signal
applied)
Thermal shutdown
Clip detector
Modularity (several devices can easily be
connected in parallel to drive very low
impedances)
= ±40 V)
S
TDA7293
with mute and standby
Multiwatt15V
class AB amplifier in Hi-Fi field applications, such
as home stereo, self powered loudspeakers and
Topclass TV. Thanks to the wide voltage range
and to the high output current capability it is able
to supply the highest power into both 4-Ω and 8-Ω
loads.
The built-in muting function with turn-on delay
simplifies the remote operation avoiding on-off
switching noises.
Parallel mode is possible by connecting several
devices and using pin11. High output power can
be delivered to very low impedance loads, so
optimizing the thermal dissipation of the system
Table 1. Device summary
Multiwatt15H
Description
The TDA7293 is a monolithic integrated circuit in
Multiwatt15 package, intended for use as audio
Order code Package
TDA7293V Multiwatt15V
TDA7293HS Multiwatt15H
Figure 1. TDA7293 block diagram
C7 100nF C6 1000µF
VMUTE
VSTBY
R3 22K
C2
R2
22µF
680Ω
IN- 2
C1 470nF
IN+
3
R1 22K
R5 10K
R4 22K
C3 10µF C4 10µF
(*) see Application note
4
SGND
(**)
10
MUTE
STBY
9
for SLAVE function
MUTE
STBY
1
STBY-GND
BUFFER DRIVER
713
-
+
THERMAL
SHUTDOWN
-Vs -PWVs
C9 100nF C8 1000µF
September 2010 Doc ID 6744 Rev 8 1/21
+Vs
PROTECTION
158
-Vs
+PWVs+Vs
OUT
14
BOOT
12
LOADER
S/C
6
5
D97AU805A
C5
22µF
BOOTSTRAP
CLIP DET
(*)
VCLIP
www.st.com
11
21
Contents TDA7293
Contents
1 Pin connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Circuit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.1 Output Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.2 Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.3 Other Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Applications information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 Applications suggestions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2 High efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3 Bridge application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.4 Modular application (ref. figure 12) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.5 Bootstrap capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.1 Vertically-mounted package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.2 Horizontally-mounted package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21 Doc ID 6744 Rev 8
TDA7293 Pin connections
1 Pin connections
Figure 2. Pin connections
TAB CONNECTED TO PIN 8
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
D97AU806
-VS (POWER)
OUT
(POWER)
+V
S
BOOTSTRAP LOADER
BUFFER DRIVER
MUTE
STAND-BY
(SIGNAL)
-V
S
(SIGNAL)
+V
S
BOOTSTRAP
CLIP AND SHORT CIRCUIT DETECTOR
SIGNAL GROUND
NON INVERTING INPUT
INVERTING INPUT
STAND-BY GND
Doc ID 6744 Rev 8 3/21
Electrical specifications TDA7293
2 Electrical specifications
2.1 Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
S
V
1
V
2
V
- V
2
V
3
V
4
V
5
V
6
V
9
V
10
V
11
V
12
I
O
P
tot
T
op
, T
T
stg
V
S
V
1
V
ESD_HBM
Supply voltage (no signal) ±60 V
V
STANDBY
Input voltage (inverting) referred to -V
Maximum differential inputs ±30 V
3
Input voltage (non inverting) referred to -V
Signal GND voltage referred to -V
Clip detector voltage referred to -V
Bootstrap voltage referred to -V
Standby voltage referred to -V
GND voltage referred to -VS (pin 8) 90 V
S
S
S
S
S
S
90 V
90 V
90 V
120 V
120 V
120 V
Mute voltage referred to -VS 120 V
Buffer voltage referred to -VS 120 V
Bootstrap loader voltage referred to -VS 100 V
Output peak current 10 A
Power dissipation T
= 70°C 50 W
case
Operating ambient temperature range 0 to 70 °C
Storage and junction temperature 150 °C
j
Supply voltage (no signal) ±60 V
V
STANDBY
GND voltage referred to -VS (pin 8) 90 V
ESD maximum withstanding voltage range,
test condition CDF-AEC-Q100-002- ”Human body
±1500 V
model”
2.2 Thermal data
Table 3. Thermal data
Symbol Parameter Min Typ Max Unit
R
thj-case
4/21 Doc ID 6744 Rev 8
Thermal resistance junction to case - 1 1.5 °C/W
TDA7293 Electrical specifications
2.3 Electrical characteristics
The specifications given here were obtained with the conditions VS = ±40 V, RL = 8 Ω,
R
=50Ω, T
g
Table 4. Electrical characteristics
.
Symbol Parameter Test conditions Min Typ Max Unit
= 25 °C, f = 1 kHz unless otherwise specified.
amb
V
S
I
q
I
b Input bias current - - 0.3 1 µA
V
OS
I
OS
P
O
d Total harmonic distortion
I
SC
Supply range - ±12 - ±50 V
Quiescent current - - 50 100 mA
Input offset voltage - -10 - 10 mV
Input offset current - - - 0.2 µA
Continuous output power
(1)
Current limiter threshold V
d = 1%, R
= ±29 V
V
S
d = 10%, R
= ±29 V
V
S
= 5 W, f = 1 kHz - 0.005 - %
P
O
= 0.1 to 50 W,
P
O
f = 20 Hz to 15 kHz
≤ ±40 V - 6.5 - A
S
= 4 Ω,
L
= 4Ω,
L
75
90
80
80
100
100
-W
-W
--0.1%
SR Slew rate - 5 10 - V/µs
G
V
G
V
Open loop voltage gain - - 80 - dB
Closed loop voltage gain
(2)
- 293031dB
A = curve - 1 - µV
e
N
R
i
SVR Supply voltage rejection
Total input noise
f = 20 Hz to 20 kHz - 3 10 µV
Input resistance - 100 - - kΩ
f = 100 Hz,
= 0.5 V RMS
V
ripple
-75-dB
Device mutes - 150 - °C
T
S
Thermal protection
Device shuts down - 160 - °C
Standby function (ref. to to pin 1)
V
ST on
V
ST off
AT T
I
q st-by
st-by
Standby on threshold - - - 1.5 V
Standby off threshold - 3.5 - - V
Standby attenuation - 70 90 - dB
Quiescent current @ standby - - 0.5 1 mA
Mute function (ref. to pin 1)
V
Mon
V
Moff
AT T
mute
Mute on threshold - - - 1.5 V
Mute off threshold - 3.5 - - V
Mute attenuatIon - 60 80 - dB
Doc ID 6744 Rev 8 5/21
Electrical specifications TDA7293
Table 4. Electrical characteristics (continued)
Symbol Parameter Test conditions Min Typ Max Unit
Clip detector
Duty Duty cycle ( pin 5)
I
CLEAK
-P
d = 1%,
R
PULLUP
= 10 kΩ to 5 V
d = 10%,
R
= 10 kΩ to 5 V
PULLUP
= 50 W - - 3 µA
O
-10-%
30 40 50 %
Slave function pin 4 (ref. to pin 8)
V
Slave
V
Master
1. Tested with optimized applications board (see fig. 3)
2. G
Vmin
Slavethreshold - - - 1 V
Master threshold - 3 - - V
≥ 26dB
Note: Pin 11 only for modular connection. Max external load 1 MΩ / 10 pF, only for test purposes
Figure 3. Typical application PCB and component layout
6/21 Doc ID 6744 Rev 8
TDA7293 Circuit description
3 Circuit description
In consumer electronics, an increasing demand has arisen for very high power monolithic
audio amplifiers able to match, with a low cost, the performance obtained from the best
discrete designs.
The task of realizing this linear integrated circuit in conventional bipolar technology is made
extremely difficult by the occurence of 2nd breakdown phoenomenon. It limits the safe
operating area (SOA) of the power devices, and, as a consequence, the maximum
attainable output power, especially in presence of highly reactive loads.
Moreover, full exploitation of the SOA translates into a substantial increase in circuit and
layout complexity due to the need of sophisticated protection circuits.
To overcome these substantial drawbacks, the use of power MOS devices, which are
immune from secondary breakdown is highly desirable.
The device described has therefore been developed in a mixed bipolar-MOS high voltage
technology called BCDII 100/120.
3.1 Output Stage
The main design task in developping a power operational amplifier, independently of the
technology used, is that of realization of the output stage.
The solution shown as a principle shematic by Fig6 represents the DMOS unity - gain output
buffer of the TDA7293.
Figure 4. Schematic of a DMOS unity-gain buffer
This large-signal, high-power buffer must be capable of handling extremely high current and
voltage levels while maintaining acceptably low harmonic distortion and good behaviour
over frequency response; moreover, an accurate control of quiescent current is required.
A local linearizing feedback, provided by differential amplifier A, is used to fullfil the above
requirements, allowing a simple and effective quiescent current setting. Proper biasing of
the power output transistors alone is however not enough to guarantee the absence of
crossover distortion.
Doc ID 6744 Rev 8 7/21
Circuit description TDA7293
While a linearization of the DC transfer characteristic of the stage is obtained, the dynamic
behaviour of the system must be taken into account.
A significant aid in keeping the distortion contributed by the final stage as low as possible is
provided by the compensation scheme, which exploits the direct connection of the Miller
capacitor at the amplifier’s output to introduce a local AC feedback path enclosing the output
stage itself.
3.2 Protection
In designing a power IC, particular attention must be reserved to the circuits devoted to
protection of the device from short circuit or overload conditions. Due to the absence of the
2nd breakdown phenomenon, the SOA of the power DMOS transistors is delimited only by a
maximum dissipation curve dependent on the duration of the applied stimulus.
In order to fully exploit the capabilities of the power transistors, the protection scheme
implemented in this device combines a conventional SOA protection circuit with a novel local
temperature sensing technique which " dynamically" controls the maximum dissipation.
In addition to the overload protection described above, the device features a thermal
shutdown circuit which initially puts the device into a muting state (@ Tϕ = 150 °C) and then
into stand-by (@ T
Full protection against electrostatic discharges on very pin is included.
= 160 °C).
j
3.3 Other Features
The device is provided with both standby and mute functions, independently driven by two
CMOS logic compatible input pins.
The circuits dedicated to the switching on and off of the amplifier have been carefully
optimized to avoid any kind of uncontrolled audible transient at the output.
The sequence that we recommend during the on/off transients is shown in Figure 8. The
application of figure 9 shows the possibility of sing only one command for both st-by and
mute functions. On both the pins, the maximum applicable range corresponds to the
operating supply voltage.
8/21 Doc ID 6744 Rev 8
TDA7293 Circuit description
Figure 5. Suggested turn-on/off sequence
+Vs
(V)
+40
-40
-Vs
V
IN
(mV)
V
ST-BY
PIN #9
(V)
5V
V
MUTE
PIN #10
(V)
I
Q
(mA)
V
OUT
(V)
OFF
ST-BY
5V
MUTE MUTE
PLAY
ST-BY OFF
Figure 6. Single signal standby/mute control circuit
MUTE STBY
MUTE/
ST-BY
20K
10K 30K
1N4148
D98AU817
10µF10µF
D93AU014
Doc ID 6744 Rev 8 9/21
Applications information TDA7293
4 Applications information
4.1 Applications suggestions
The recommended values of the external components are those shown on the application
circuit of Figure 1 on page 1. Different values can, however, be used and the following table
could be useful when choosing alternative values.
Table 5. Choosing alternative component values
Component
(1)
R1
R2 680 Ω
(1)
R3
22 kΩ Increase of gain Decrease of gain
Suggested
value
Purpose
22 kΩ Input resistance
Closed loop gain,
set to 30 dB
(2)
R4 22 kΩ Standby time constant
R5 10 kΩ Mute time constant
C1 0.47 µF Input DC decoupling -
C2 22 µF
Feedback DC
decoupling
C3 10 µF Mute time constant
C4 10 µF Standby time constant
(3)
x N
C5 22 µF
Bootstrapping -
Larger than
suggested
Increase input
impedance
Decrease input
impedance
Decrease of gain Increase of gain
Larger Standby
on/off time
Larger mute
on/off time
Smaller standby
ON/OFF time; pop
noise
Smaller mute
on/off time
Higher low-frequency
cutoff
-
Larger mute
on/off time
Larger standby
on/off time
Higher low-frequency
cutoff
Smaller mute on/off
time
Smaller standby on/off
time; pop noise
Signal degradation at
low frequency
C6, C8 1000 µF Supply voltage bypass - -
Smaller than
suggested
C7, C9 0.1 µF Supply voltage bypass - Danger of oscillation
1. R1 = R3 for pop optimization
2. Closed loop gain has to be ³ 26dB
3. Multiply this value by the number, N, of modular parts connected
Figure 7. Slave function: pin 4 (Ref to pin 8)
Note: If in the application the speakers are
-V
+3V
S
+1V
-V
S
-V
S
10/21 Doc ID 6744 Rev 8
MASTER
UNDEFINED
SLAVE
D98AU821
connected via long wires, it is a good rule
to add, between the output and GND, a
boucherot cell in order to avoid dangerous
spurious oscillations if the speakers
terminal are shorted.
The suggested boucherot resistor is
3.9
Ω
/2W and the capacitor is 1µF.
TDA7293 Applications information
4.2 High efficiency
Constraints of implementing high power solutions are the power dissipation and the size of
the power supply. These are both due to the low efficiency of conventional AB class
amplifier approaches.
The circuit below in Figure 8 is a high efficiency amplifier which can be adopted for both hi-fi
and car-radio applications. The TDA7293 is a monolithic MOS power amplifier which can be
operated with a 100-V supply (120 V with no signal applied) while delivering output currents
up to ±6.5 A. This allows the use of this device as a very high-power amplifier (up to 180 W
peak power with THD = 10% and R
hardly manageable in the above power range.
The typical junction-to-case thermal resistance of the TDA7293 is 1 °C/W (max = 1.5 °C/W).
In worst case conditions, to avoid the chip temperature exceeding 150 °C the thermal
resistance of the heatsink must be 0.038 °C/W (at a maximum ambient temperature of
50 °C).
As the above value is pratically unreachable, a high efficiency system is needed in those
cases where the continuous average output power is higher than 50 to 60 W.
The TDA7293 was designed to work also in a higher efficiency way. For this reason there
are four power supply pins: two intended for the signal part and two for the power part. T1
and T2 are two power transistors that only operate when the output power reaches a certain
threshold (for example, 20 W).
= 4 Ω); the only drawback is the power dissipation,
L
If the output power increases, these transistors are switched on during the portion of the
signal where more output voltage swing is needed, thus "bootstrapping" the power supply
pins (13 and 15). The current generators formed by T4, T7, zener diodes Z1, Z2 and
resistors R7, R8 define the minimum drop across the power MOS transistors of the
TDA7293. L1, L2, L3 and the snubbers C9, R1 and C10, R2 stabilize the loops formed by
the "bootstrap" circuits and the output stage of the TDA7293.
By considering again a maximum average output power (music signal) of 20 W, in case of
the high efficiency application, the thermal resistance value needed from the heatsink is
2.2 °C/W (with V
= ±50 V and RL = 8 Ω). All components (TDA7293 and power transistors
S
T1 and T2) can be placed on a 1.5 °C/W heatsink, with the power darlingtons electrically
insulated from the heatsink.
Since the total power dissipation is less than that of a usual class AB amplifier, additional
cost savings can be obtained while optimizing the power supply, even with a large heatsink.
4.3 Bridge application
Another application suggestion is the bridge configuration, where two TDA7293 are used.
In this application, the value of the load must not be lower than 8 Ω for dissipation and
current capability reasons.
A suitable field of application includes hi-fi/TV subwoofer realizations. The main advantages
offered by this solution are:
z High power performance with limited supply voltage level.
z Considerably higher output power even with high load values, such as 16 Ω.
With R
R
= 8 Ω and VS = ±25 V, the maximum output power obtainable is 150 W, whilst with
L
= 16 Ω and VS = ±40 V, the maximum Pout is 200 W.
L
Doc ID 6744 Rev 8 11/21
Applications information TDA7293
4.4 Modular application (ref. figure 12)
The modular application is where several devices operate in parallel.
The modular application allows very high power be delivered to very low-impedance loads.
In this type of application one device acts as a master and the others as slaves.
The slave power stages are driven by the master device and work in parallel together while
the input and the gain stages of the slave devices are disabled. The figure below shows the
connections required to configure two devices to work together.
z The master chip connections are the same as the normal single ones.
z The outputs can be connected together without the need of any ballast resistor.
z The slave SGND pin must be tied to the negative supply.
z The slave STANDBY and MUTE pins must be connected to the master STANDBY and
MUTE pins.
z The bootstrap lines must be connected together and the bootstrap capacitor must be
increased: for N devices the bootstrap capacitor must be 22 µF times N.
z The slave IN pin must be connected to the negative supply.
4.5 Bootstrap capacitor
For compatibility purpose with the previous devices of the family, the bootstrap capacitor can
be connected either between the bootstrap pin (6) and the output pin (14) or between the
bootstrap pin (6) and the bootstrap loader pin (12).
When the bootstrap is connected between pins 6 and 14 the maximum supply voltage in the
presence of an output signal is limited to 100 V, due the bootstrap capacitor overvoltage.
When the bootstrap is connected between pins 6 and 12 the maximum supply voltage
extends to the full voltage that the technology can stand, in this case 120 V.
This is accomplished by the clamp introduced at the bootstrap loader pin (12). This pin
follows the output voltage up to 100 V and remains clamped at 100 V for higher output
voltages.
This feature lets the output voltage swing up to a gate-source voltage from the positive
supply (V
-3 to 6 V).
S
12/21 Doc ID 6744 Rev 8
TDA7293 Applications information
t
Figure 8. High-efficiency applications circuit
+50V
D6
1N4001
PLAY
ST-BY
D5
1N4148
INC7
D1 BYW98100
C12 330nF
R12
13K
C13 10µF
R13 20K
R14 30K
R15 10K
C14
10µF
D2 BYW98100
R20
20K
R21
20K
+25V
GND
-25V
-50V
C1
1000µF
63V
C2
1000µF
63V
C3
100nF
C4
100nF
C5
1000µF
35V
C6
1000µF
35V
100nF
R22
10K
R23
10K
C8
100nF
C9
330nF
C10
330nF
D7
1N4001
R1
2
R2
2
Figure 9. PCB and component layout of fig. 8
7
3
4
TDA7293
9
1
8
10
13
15
BDX53A
R17 270
L1 1µH
2
14
6
12
L2 1µH
R19 270
BDX54A
T3
BC394
T1
D3 1N4148
R3 680
R16
13K
C15
22µF
D4 1N4148
T2
T6
BC393
C11 22µF
L3 5µH
R18 270
R4
270R5270
T4
BC393
Z1 3.9V
Z2 3.9V
T7
BC394
R9
270
R6
20K
R7
3.3K
R8
3.3K
R10
270
D97AU807C
T5
BC393
1.8nF
1.8nF
T8
BC394
R11
20K
C16
C17
OUT
P
o
Doc ID 6744 Rev 8 13/21
Applications information TDA7293
Figure 10. PCB - solder side of the Fig 9
Figure 11. Modular application circuit
C7 100nF C6 1000µF
SGND
MUTE
STBY
C3 10µF
SGND
MUTE
STBY
IN- 2
IN+
C4 10µF
IN- 2
IN+ 3
R3 22K
3
4
10
9
4
10
9
-
+
MUTE
STBY
1
STBY-GND
C7 100nF
-
+
MUTE
STBY
1
STBY-GND
MASTER
VMUTE
VSTBY
SLAVE
C2
22µF
R5 10K
R4 22K
680Ω
C1 470nF
R1 22K
R2
+Vs
BUFFER
DRIVER
11
713
THERMAL
SHUTDOWN
-Vs -PWVs
C9 100nF
BUFFER
DRIVER
713
11
THERMAL
SHUTDOWN
-Vs -PWVs
C9 100nF C8 1000µF
PROTECTION
158
-Vs
+Vs
PROTECTION
158
-Vs
+PWVs+Vs
S/C
C6 1000µF
+PWVs+Vs
S/C
14
12
6
5
C8 1000µF
14
12
6
5
OUT
BOOT
LOADER
C5
47µF
BOOTSTRAP
CLIP DET
OUT
BOOT
LOADER
BOOTSTRAP
D97AU808D
C10
100nF
R7
2Ω
14/21 Doc ID 6744 Rev 8
TDA7293 Applications information
Figure 12. Modular application PCB and component layout (component side)
Figure 13. Modular application PCB and component layout (solder side)
Doc ID 6744 Rev 8 15/21
Applications information TDA7293
Figure 14. Distortion vs output power Figure 15. Distortion vs output power
Figure 16. Distortion vs frequency Figure 17. Modular application derating rload
vs voltage supply (ref. fig. 12)
Figure 18. Modular application Pd vs voltage
Figure 19. Output power vs. supply voltage
supply (ref. fig. 12)
16/21 Doc ID 6744 Rev 8
TDA7293 Package mechanical data
5 Package mechanical data
The TDA7293 comes with a choice of two 15-pin packages, Multiwatt15V and Multiwatt15H.
The package sizes and outline drawings are given below.
5.1 Vertically-mounted package
Figure 20. Multiwatt15V package
DIM.
A5 0.197
B 2.65 0.104
C 1.6 0.063
D 1 0.039
E 0.49 0.55 0.019 0.022
F 0.66 0.75 0.026 0.030
G 1.02 1.27 1.52 0.040 0.050 0.060
G1 17.53 17.78 18.03 0.690 0.700 0.710
H1 19.6 0.772
H2 20.2 0.795
L 21.9 22.2 22.5 0.862 0.874 0.886
L1 21.7 22.1 22.5 0.854 0 .87 0.886
L2 17.65 18.1 0.695 0.713
L3 17.25 17.5 17.7 5 0.679 0.689 0.699
L4 10.3 10.7 10.9 0.406 0.421 0.4 29
L7 2.65 2.9 0.104 0.114
M 4.25 4.55 4.85 0.167 0.179 0.1 91
M1 4.73 5.0 8 5.43 0.186 0.200 0.214
S 1 .9 2.6 0.075 0.102
S1 1.9 2.6 0.075 0.1 02
Dia1 3.65 3.85 0.144 0.152
mm inch
MIN. TYP. MAX. MIN. TYP. MA X.
OUTLINE AND
MECHANICAL DATA
Multiwatt15 (Vertical)
0016036 J
Doc ID 6744 Rev 8 17/21
Package mechanical data TDA7293
5.2 Horizontally-mounted package
Figure 21. Multiwatt15H outline
18/21 Doc ID 6744 Rev 8
TDA7293 Package mechanical data
Table 6. Multiwatt15H dimensions
Dimension in mm Dimension in inch
Ref
Min Typ Max Min Typ Max
A - - 5.00 - - 0.197 -
B - - 2.65 - - 0.104 -
C - - 1.60 - - 0.063 -
E 0.49 - 0.55 0.019 - 0.022 -
F 0.66 - 0.75 0.026 - 0.030 -
G 1.02 1.27 1.52 0.040 0.050 0.060 -
G1 17.53 17.78 18.03 0.690 0.700 0.710 -
H1 19.60 - 20.20 0.772 - 0.795 -
H2 19.60 - 20.20 0.772 - 0.795 -
L1 17.80 18.00 18.20 0.701 0.709 0.717 -
L2 2.30 2.50 2.80 0.091 0.098 0.110 -
L3 17.25 17.50 17.75 0.679 0.689 0.699 -
L4 10.30 10.70 10.90 0.406 0.421 0.429 -
L5 2.70 3.00 3.30 0.106 0.118 0.130 -
Notes
L7 2.65 - 2.90 0.104 - 0.114 -
N -------
P -------
R - 1.50 - - 0.059 - -
R1 -------
S 1.90 - 2.60 0.075 - 0.102 -
S1 1.90 - 2.60 0.075 - 0.102 -
V -------
Diam.1 3.65 - 3.85 0.144 - 0.152 -
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
Doc ID 6744 Rev 8 19/21
Revision history TDA7293
6 Revision history
Table 7. Document revision history
Date Revision Changes
Jan-2004 7 First Issue in EDOCS
Aug-2004 7.1 Stylesheet update. No content change
24-Sep-2010 8
Updated package dimensions for Multiwatt15H in Table 6 on page 19
Updated presentation throughout document.
20/21 Doc ID 6744 Rev 8
TDA7293
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