ST TDA2006 User Manual

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DESCRIPTION

The TDA2006 is a monolithic integrated circuit in
Pentawatt package, intended for use as a low
frequencyclass ”AB” amplifier. At ±12V,d = 10 %
typicallyitprovides12Woutputpowerona4Ω load
and 8W on a 8Ω . The TDA2006 provides high
output current and has very low harmonic and
cross-over distortion. Further the device incorpo­ratesanoriginal(andpatented)shortcircuitprotec­tion system comprising an arrangement for
automaticallylimitingthe dissipatedpower soas to
keep the working point of the output transistors
within their safe operating area. A conventional
thermal shutdown system is also included. The
TDA2006is pin to pin equivalentto theTDA2030.

TDA2006

12W AUDIOAMPLIFIER

PENTAWATT

ORDERING NUMBERS : TDA2006V

TDA2006H

TYPICALAPPLICATION CIRCUIT

May 1995

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TDA2006

SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

s

V
V

I

o

P

tot

T

stg,Tj

Supply Voltage ± 15 V
Input Voltage V

i

Differential Input Voltage ± 12 V

i

s

Output Peak Current (internaly limited) 3 A
Power Dissipation at T

=90°C20W

case

Storage andJunction Temperature – 40 to 150 °C

THERMALDATA

Symbol Parameter Value Unit

R

th (j-c)

Thermal Resistance Junction-case Max 3 °C/W

PIN CONNECTION

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TDA2006

ELECTRICALCHARACTERISTICS

(refer to thetest circuit ; V

= ± 12V, T

S

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

I

V

P

Supply Voltage ± 6 ± 15 V

s

I

Quiescent Drain Current Vs= ± 15V 40 80 mA

d

Input Bias Current Vs= ± 15V 0.2 3 µA

I

b

Input Offset Voltage Vs= ± 15V ± 8mV

OS

Input Offset Current Vs= ± 15V ± 80 nA

OS

Output Offset Voltage Vs= ± 15V ± 10 ± 100 mV

OS

Output Power d = 10%, f = 1kHz

o

d Distortion P

V

Input Sensitivity Po= 10W, RL=4Ω, f = 1kHz

i

B Frequency Response (– 3dB) P

R

Input Resistance (pin1) f = 1kHz 0.5 5 MΩ

i

G
G
e

Voltage Gain (open loop) f = 1kHz 75 dB

v

Voltage Gain (closed loop) f = 1kHz 29.5 30 30.5 dB

v

Input Noise Voltage B (– 3dB) = 22Hz to 22kHz, RL=4Ω 310µV

N

i

Input Noise Current B (– 3dB) = 22Hz to 22kHz, RL=4Ω 80 200 pA

N

SVR Supply Voltage Rejection R

I

Drain Current Po= 12W, RL=4Ω

d

T

Thermal Shutdown Junction

j

Temperature

(*) Referring to Figure 15, single supply.

=25oC unless otherwise specified)

amb

=4Ω

R

L

=8Ω 6

R

L

= 0.1 to 8W, RL=4Ω, f = 1kHz

o

= 0.1 to 4W, RL=8Ω, f = 1kHz

P

o

=6W,RL=8Ω, f = 1kHz

P

o

=8W,RL=4Ω 20Hz to 100kHz

o

=4Ω,Rg= 22kΩ,f

L

=8W,RL=8Ω

P

o

= 100Hz (*) 40 50 dB

ripple

12

8

0.2

0.1

200
220

850
500

145 °C

W

%
%

mV
mV

mA
mA

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TDA2006

Figure1 : OutputPower versus Supply Voltage Figure 2 : Distortionversus OutputPower

Figure3 : Distortionversus Frequency Figure4 : Distortion versusFrequency

Figure5 : Sensitivityversus Output Power Figure6 : Sensitivityversus OutputPower

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TDA2006

Figure7 : FrequencyResponsewith differentval-

uesof the rolloff CapacitorC8 (see
Figure13)

Figure9 : QuiescentCurrent versus

Supply Voltage

Figure8 : Value of C8 versus Voltage Gain for dif-

ferent Bandwidths (see Figure 13)

Figure10 : Supply Voltage Rejection versus

VoltageGain

Figure11 : PowerDissipationand Efficiency ver-

sus Output Power

Figure12 : Maximum PowerDissipationversus

SupplyVoltage
(sine waveoperation)

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TDA2006

Figure13 : ApplicationCircuit with Spilt PowerSupply

Figure14 : P.C. Board and ComponentsLayoutof theCircuit of Figure 13 (1:1 scale)

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Figure15 : ApplicationCircuit with SinglePower Supply

Figure16 : P.C. Board and ComponentsLayoutof theCircuit of Figure 15 (1:1 scale)

TDA2006

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TDA2006

Figure17 : BridgeAmplifierConfiguration with Split PowerSupply(PO= 24W,VS= ± 12V)

PRACTICALCONSIDERATIONS
PrintedCircuit Board

The layout shownin Figure14 should be adopted
by the designers. If different layout are used, the
ground points of input 1 and input 2 must be well
decoupled from ground of the output on which a
ratherhigh current flows.

AssemblySuggestion

No electricalisolationisneededbetween thepack-

age and the heat-sink with single supply voltage
configuration.

ApplicationSuggestion

The recommendedvalues of the components are
the onesshownon applicationcircuitsof Figure13.
Differentvaluescan be used. The table 1 can help
the designers.

Table 1

Component

R

1

R

2

R

3

R

4

R

5

C

1

C

2

C

3C4

C

5C6

C

7

C

8

D

1D2

(*) Closed loop gain must behigher than 24dB.

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Recommanded

Value

22 kΩ Closed Loop GainSetting Increase of Gain Decrease of Gain (*)
680 Ω Closed Loop GainSetting Decrease of Gain (*) Increase of Gain
22 kΩ Non InvertingInput

Biasing

1 Ω Frequency Stability Danger of Oscillation at

3R

2

Upper Frequency Cut-off Poor High Frequencies

2.2 µF Input DC Decoupling Increase of Low

22 µF Inverting Input DC

Decoupling

0.1 µF Supply Voltageby Pass Danger of Oscillation

100 µF Supply Voltage by Pass Danger of Oscillation

0.22 µF Frequency Stability Danger of Oscillation
1

2πBR

1

Upper Frequency Cut-off Lower Bandwidth LargerBandwidth

1N4001 To Protect the Device Against Output Voltage Spikes.

Purpose

Larger Than

Recommanded Value

Increase of Input
Impedance

High Frequencies with
Inductive Loads

Attenuation

Smaller Than

Recommanded Value

Decrease of Input
Impedance

Danger of Oscillation

Frequencies Cut-off
Increase of Low

Frequencies Cut-off

TDA2006

SHORTCIRCUIT PROTECTION

The TDA2006 has an original circuit which limits
the current of the output transistors. Figure 18
shows that the maximumoutput current is a func­tion of the collector emitter voltage ; hence the
output transistors work within their safe operating
area(Figure 19).

Thisfunctioncan thereforebe consideredas being
peak power limiting rather thansimple current lim­iting.
It reducesthe possibility that the devicegets dam­aged during an accidental short circuit from AC
output to ground.

THERMALSHUT DOWN

Thepresenceof a thermal limiting circuitoffers the
followingadvantages :

1)an overload on the output (even if it is
permanent), or an above limit ambient
temperaturecan be easily supported since the

cannotbe higherthan 150°C.

T

j

2) the heatsink can have a smallerfactor of safety
compared with that of a conventional circuit.
Thereis no possibilityof device damage due to
high junction temperature.

If for any reason, the junction temperature in­creasesupto 150°C,thethermalshutdownsimply
reducesthepowerdissipationandthecurrentcon­sumption.

Figure19 : SafeOperating Area and Collector

Characteristics ofthe Protected
PowerTransistor

Figure20 : OutputPower and DrainCurrent ver-

susCase Temlperature(R

=4Ω)

L

The maximum allowable power dissipation de­pends upon the size of the external heatsink (i.e.
its thermalresistance) ; Figure22 shows the dissi­pablepower as a function of ambient temperature
for differentthermal resistances.

Figure18 : MaximumOutput Current versus

VoltageV

accross each Out-

CE (sat)

put Transistor

Figure21 : OutputPower and DrainCurrent ver-

susCase Temlperature(R

=8Ω)

L

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TDA2006

Figure22 : MaximumAllowable PowerDissipa-

tion versusAmbientTemperature

DIMENSIONSUGGESTION

Thefollowingtable showsthelengthoftheheatsink
in Figure23 for severalvalues of P

P

(W) 12 8 6

tot

Lenght of Heatsink (mm) 60 40 30
R

of Heatsink (°C/W) 4.2 6.2 8.3

th

andRth.

tot

Figure 23 : Example of Heatsink

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PENTAWATT PACKAGE MECHANICAL DATA

TDA2006

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110

D1 1.2 1.35 0.047 0.053

E 0.35 0.55 0.014 0.022

F 0.8 1.05 0.031 0.041

F1 1 1.4 0.039 0.055

G 3.4 0.126 0.134 0.142

G1 6.8 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409

L 17.85 0.703

L1 15.75 0.620
L2 21.4 0.843
L3 22.5 0.886
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260

M 4.5 0.177

M1 4 0.157
Dia 3.65 3.85 0.144 0.152

A

H3

L

L1

C

D1

L5

Dia.

L7

L6

L2
L3

D

F1

H2

E

MM1

G1

G

F

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TDA2006

Information furnished is believed to be accurate andreliable. However,SGS-THOMSON Microelectronicsassumes no responsibility
for the consequences of use of such information nor for anyinfringement ofpatents or other rights of third parties which may result
from its use. No license is granted byimplication orotherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products arenot authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.

 1995 SGS-THOMSON Microelectronics - AllRights Reserved

PENTAWATT is Registered Trademarkof SGS-THOMSON Microelectronics

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