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TD310
TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE
■ THREE POWER IGBT/MOS AND PULSE
TRANSFORMER DRIVERS
■ CURRENT SENSE COMPARATOR
■ UNCOMMITTED OP-AMP
■ 0.6 A PER CHANNEL PEAK OUTPUT
CURRENT CAPABILITY
■ LOW OUTPUT IMPEDANCE TYP: 7Ω AT
200mA
■ CMOS/LSTTL COMPATIBLE INVERTING
INPUT WITH HYSTERESIS
■ 4V TO 16V SINGLE SUPPLY OPERATION
■ LOW BIAS CURRENT TYP: 1.5mA
■ ADJUSTABLE UNDERVOLTAGE LOCKOUT
LEVEL
■ STAND-BY MODE
■ CHANNE L PARALLELING CAPABI LITY
DESCRIPTION
The TD310 is designed t o drive one, two or th ree
Power IGBT/MOS and has driving capability for
pulse transformer. So it is perfectly suited to
interface control IC with Power Switches in low
side or half-b ridge config uration.
N
DIP-16
(Plastic Package)
D
SO-16
(Plastic Micropacka ge)
ORDER CODE
Part Number Temperature Range
TD310I -40°C, +125°C
N = Dual in Line Package (DIP)
D = Small Outline Package (SO) - also available in Tape & Reel (DT)
Package
ND
••
PIN CONNECTIONS (top view)
TD310 includes a current sense comparator which
inhibit the output drivers in case of overcurrent. An
alarm output signals the even to a controller.
TD310 also includes an uncommitted op-amp
which can be u sed for current measurement (as
an amplifier before the A/D input of a
microcontroller) of for other general purpose.
Programmable undervo ltage lockout and standby
mode make TD310 suitable for a large area of
environment and application.
Typical applications are low side IG BT and power
MOSFET drive in three phase systems, pulse
transformer drive, and general purpose pulse
drive.
December 2001
VCC
Enable
Alarm
OA Output
OA Input + Sense +
INA
INB
INC
1
2
3
4
5
6
7
16
15
14
13
12
11
10
98
UVLO/Stb
OUTA
OUTB
OUTC
Gnd
Sense OA Input -
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TD310
BLOCK DIAGRAM
VCC
Stby
INA
INB
INC
Enable
Alarm
OA output
1.26M
140k
GND
VCC
GND
0.7V
1.2V
Standby
UVLO
Control
Unit
Standby
TD310
OUTA
OUTB
OUTC
Sense+
Sense -
OA input +
OA Input-
GND
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
T
Supply Voltage 18 V
CC
V
Input Voltage
i
V
Sense Input Voltage
is
T
Operating Junction Temperature -40 to 150 °C
j
Operating Ambient Temperature -40 to 125 °C
amb
0 to V
-0.3 to V
CC
CC
V
V
OPERATING CONDITIONS
Symbol Parameter Value Unit
V
Supply Voltage 4 to 16 V
CC
INSTRUCTION FOR USE
1 - The TD310 supply voltage must be decoupled with a 1µF min. capacitor.
2 - If the application involv ing TD310 requires m aximum output current capa bility, this current must be
pulsed: pulse width 1µsec, duty cycle 1% at T
2/9
amb.
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TD310
ELECTRICAL CHARACTERISTICS
V
= 15V, T
CC
= 25°C (unless otherwise specified)
amb
Symbol Parameter Min. Typ. Max. Unit
I
Supply Current with Inputs in High State 1.5 2 mA
CC
LOGIC INPUT (all inputs)
V
High Input Voltage 2 V
IH
V
Low Input Voltage 0.8 V
IL
I
High Input Current 10 pA
IH
I
Low Input Current 10 pA
IL
Propagation Delay (10% input to 10% output)
t
dH
tdL, t
t
, t
eL
eH
t
li
dd
Output Delay
Output Delay
≤ Tamb ≤ T
T
min.
max.
Input Inhibiting Time 100 ns
Differential Delay Time Between Channels 20 ns
OUTPUT DRIVERS
V
V
V
R
Sourcing Drop Voltage (A/B/C outputs)
sod
sid
dem
opd
I
= 200mA
source
Sinking Drop Voltage (A/B/C outputs)
Isink = 200mA
Demagnetizing Drop Voltage (A/B/C outputs)
Idemag. = 100mA
Output Pull Down Resistor 47 k
ALARM OUTPUT
Low Level Sinking Current
I
s
I
sh
t
A
V
= 0.8V
O
High Level Sinking Current 1
Alarm Output : Delay Time to Alarm Fall if Sense Input Triggered 500 ns
SENSE INPUT
V
V
Input Offset Voltage 20 mV
ios
t
Inhibition Time if Sense Input Triggered 1 ms
Ai
Delay Time to Output Fall if Sense Input Triggered
t
s
t
si
shys
All outputs inhibited
Inhibition Time of Sense Input 300 ns
Sense Hysteresis 40 mV
OPERATIONAL AMPLIFIER
V
GBP Gain Bandwidth Product 1 MHz
Common Mode Input Voltage Range
icm
V
Input Offset Voltage 10 mV
io
A
Open Loop Gain 60 dB
vd
Slew Rate at Unity Gain (R
SR
= 100kΩ, CL = 100pF, Vi = 3 to 7V)
L
STAND-BY
V
I
Standby Mode Threshold Voltage 0.3 1.1 V
stdby
Standby Mode Supply Current 30
stdby
UNDER VOLTAGE LOCKOUT
I
Under Voltage Level Adjust Current 1
adj
V
V
Internal Stop Threshold (without external adjustment) 10.7 13.3 V
st1
Threshold Hysteresis 0.8 V
hys
200
60
400
400
3V
5V
2V
535 mA
600 ns
CC
+
- 1.5
0 to V
0.6 V/µs
µ
ns
Ω
A
µ
V
A
µ
A/V
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