ST T8T User Manual

T8T
Snubberless™, logic level and standard 8 A Triacs
Features
Medium current Triac
High static and dynamic commutation
Low thermal resistance with clip bonding
600 V V
UL certified (ref. file E81734)
RM
Applications
Value sensitive application
General purpose ac line load switching
Motor control circuits in power tools
Small home appliances, lighting
Inrush current limiting circuits
Overvoltage crowbar protection
Description
Available in through-hole, the T8T series of Triacs can be used as on/off or phase angle control function in general purpose ac switching where high commutation capability is required.
A2
G
A1
A1
A2
G
TO-220AB insulated
(T8xxT-6I)

Table 1. Device summary

Order code Symbol Value
3Q
I
T810T-6I
T820T-6I T835T-6I
T825T-6I
GT
logic level
3Q
I
GT
Snubberless
4Q
I
GT
standard
20 / 35 mA
10 mA
25 mA
This series can be designed-in in many value sensitive appliances thanks to the parameters guidance provided in the following pages.
Provides insulation rated at 2500 V rms (TO-220AB insulated package).
TM: Snubberless is a trademark of STMicroelectronics
September 2011 Doc ID 16192 Rev 3 1/9
www.st.com
9
Characteristics T8T

1 Characteristics

Table 2. Absolute ratings (limiting values; Tj = 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
I
T(RMS)
I
dI/dt
V
DSM
V
I
P
G(AV)
T
On-state rms current (full sine wave) Tc = 97 °C 8 A
Non repetitive surge peak on-state current
TSM
(full cycle, Tj initial = 25 °C)
²
tI²t Value for fusing tp = 10 ms 26 A²s
I
Critical rate of rise of on-state current I
= 2 x IGT
G
tr 100 ns
/
Non repetitive surge peak off-state voltage
RSM
Peak gate current tp = 20 µs Tj = 125 °C 4 A
GM
F = 50 Hz t
F = 60 Hz t
F = 60 Hz T
= 10 ms Tj = 25 °C
t
p
= 20 ms 60
p
= 16.7 ms 63
p
= 125 °C 50 A/µs
j
V
DRM/VRRM
+ 100
Average gate power dissipation Tj = 125 °C 1 W
Storage junction temperature range - 40 to + 150 °C
stg
Operating junction temperature range - 40 to + 125 °C
T
j
A
V
2/9 Doc ID 16192 Rev 3
T8T Characteristics
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
T8xxT
Symbol Test conditions Quadrant
T810T T820T T825T T835T
I
GT
V
V
I
H
(1)
VD = 12 V, RL = 30 Ω
I - II - III
MAX.
IV 40
VD = V
GT
Tj = 25 °C
VD = V
GD
(2)
= 125 °C
T
j
IT = 500 mA MAX. 15 25 30 40 mA
, RL = 30 Ω,
DRM
, RL = 3.3 kΩ,
DRM
ALL MAX. 1.3 V
ALL MIN. 0.2 V
I - III
IG = 1.2 I
I
L
GT
MAX.
10 20 25 35
20 35 40 50
II 25 40 70 70
dV/dt
(di/dt)c
(2)
VD = 67% V
DRM,
gate open
Tj = 125 °C
= 150 °C
T
j
(3)
MIN.
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs 2 4.5
Without snubber 3.4 8
(2)
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs 1 2
Tj = 125 °C
= 150 °C
T
j
MIN.
(3)
100 750 500 2000
50 500 300 1000
5.4
2.5
Without snubber 2 6.5
1. Minimum IGT is guaranted at 5% of IGT max.
2. For both polarities of A2 referenced to A1.
3. Derating information for excess temperature above T

Table 4. Static characteristics

max.
j
Unit
mA
mAIV 40
V/µs
A/ms
Symbol Test conditions Value Unit
(1)
V
ITM = 11.3 A, tp = 380 µs Tj = 25 °C MAX. 1.60 V
T
(1)
V
TO
R
D
I
DRM
I
RRM
1. For both polarities of A2 referenced to A1.
2. Derating information for excess temperature above T
Threshold voltage Tj = 125 °C MAX. 0.87 V
(1)
Dynamic resistance Tj = 125 °C MAX. 60 mΩ
Tj = 25 °C
V
DRM
V
= 0.9 x V
D
= V
RRM
DRM
max.
j
= 125 °C 1
T
j
Tj = 150 °C
(2)
MAX.
TYP. 1.9
A
Doc ID 16192 Rev 3 3/9
mA
Characteristics T8T

Table 5. Thermal resistance

Symbol Parameter Value Unit
R
R
Figure 1. Maximum power dissipation versus
10
10
9
9
8
8
7
7
6
6
5
5
4
4
3
3
2
2
1
1
0
0
Figure 3. On-state rms current versus
Junction to case (AC) 2.8 °C/W
th(j-c)
Junction to ambient (DC) 60 °C/W
th(j-a)
Figure 2. On-state rms current versus case
rms on-state current
P(W)
α = 180°
180°
I
(A)
T(RMS)
012345678
012345678
I
T(RMS)
10
10
9
9
8
8
7
7
6
6
5
5
4
4
3
3
2
2
1
1
0
0
0 25 50 75 100 125
0 25 50 75 100 125
temperature
(A)
Figure 4. Relative variation of thermal
ambient temperature
impedance versus pulse duration
α = 180°
TC(°C)
(free air convection)
I
2.5
2.5
2.0
2.0
T(RMS)
(A)
α = 180°
1.0E+00
K = [Zth/ Rth]
TO-220AB
Z
th(j-c)
Z
th(j-a)
1.5
1.5
1.0E-01
1.0
1.0
0.5
0.5
0.0
0.0 0 25 50 75 100 125
0 25 50 75 100 125
Ta(°C)
Figure 5. On-state characteristics
1.0E-02
Figure 6. Surge peak on state current versus
(maximum values)
ITM(A)
100
100
10
10
Tjmax:
Vto= 0.87 V
1
1
02345
02345
1
VTM(V)
Rd=6 0 mΩ
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0
TO-220AB
Tp(s)
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
number of cycles
I
(A)
TSM
Non repetitive
Tjinitial = 25 °C
Repetitive Tc= 97 °C
1 10 100
1 10 100
t = 20 ms
One cycle
Number of cycles
1000
4/9 Doc ID 16192 Rev 3
T8T Characteristics
Figure 7. Non repetitive surge peak on-state
current for a sinusoidal
I
(A), I²t (A²s)
TSM
1000
1000
dl /dt limitation: 50 A / µs
100
100
Tjinitial = 25 °C
I
TSM
I²t
pulse with width t <10 ms, and corresponding value of I²t
10
10
0.01 0.10 1.00 10.00
0.01 0.10 1.00 10.00
p
tp(ms)
Figure 9. Relative variation of holding
current and latching current versus junction temperature
IH,[Tj] / IH,IL[Tj= 25 °C]I
L
2.0
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
0.0
-50 -25 0 25 50 75 100 125
-50 -25 0 25 50 75 100 125
Tj(°C)
typical values
I
H
I
L
Figure 11. Relative variation of critical rate of
decrease of main current versus junction temperature
(dl / dt)c[Tj] / [Tj= 125 °C](dl / dt)
6
5
4
3
2
1
0
25 50 75 100 125
c
Tj(°C)
Figure 8. Relative variation of gate trigger
current and gate trigger voltage versus junction temperature
IGT,VGT[Tj] / IGT,VGT[Tj= 25 °C]
3.0
3.0
2.5
2.5
2.0
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
0.0
-50 -25 0 25 50 75 100 125
-50 -25 0 25 50 75 100 125
IGTQ3
IGTQ1-Q2
IGTQ1-Q2-Q3
Tj(°C)
typical values
Figure 10. Relative variation of static dV/dt
immunity versus junction temperature
dV / dt [Tj] / [Tj= 125 °C]dV / dt
7
6
5
4
3
2
1
0
25 50 75 100 125
VD=VR= 402 V
Tj(°C)
Figure 12. Relative variation of leakage
current versus junction temperature
I
DRM/IRRM[Tj;VDRM/VRRM
1.0E+00
1.0E-01
1.0E-02
1.0E-03 25 50 75 100 125
[Tj= 125 °C; 600 V]
V
DRM=VRRM
] / I
DRM/IRRM
V
DRM=VRRM
= 400 V
for different values of blocking voltage
= 600 V
V
DRM=VRRM
= 200 V
Tj(°C)
Doc ID 16192 Rev 3 5/9
Ordering information scheme T8T

2 Ordering information scheme

Figure 13. Ordering information scheme

T 8 10 T - 6 I
TRIAC
Current
8 = 8 A
Sensitivity
10 = 10 mA 20 = 20 mA 25 = 25 mA 35 = 35 mA
Application specific
Voltage
6 = 600 V
Package I = TO-220AB-Ins.
6/9 Doc ID 16192 Rev 3
T8T Package mechanical data

3 Package mechanical data

Epoxy meets UL94, V0
Lead-free packages
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com ECOPACK

Table 6. TO-220AB Insulated dimensions

®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
.
Dimensions
Ref.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
a1 3.75 0.147
B
Ø I
L
A
I4
l3
a1
l2
a2
C
b2
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
F
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c2
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
b1
e
M
F 6.20 6.60 0.244 0.259
c1
ØI 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M2.60 0.102
Doc ID 16192 Rev 3 7/9
Ordering information T8T

4 Ordering information

Table 7. Ordering information

Order code Marking Package Weight Base qty Delivery mode
T810T-6I T810T-6I
T820T-6I T820T-6I
T825T-6I T825T-6I
T835T-6I T835T-6I

5 Revision history

Table 8. Document revision history

Date Revision Changes
10-Sep-2009 1 First issue.
18-Jan-2010 2 Updated pag.1.
20-Sep-2011 3 Updated: Features.
TO-220AB-Ins. 2.3 g 50 Tube
8/9 Doc ID 16192 Rev 3
T8T
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Doc ID 16192 Rev 3 9/9
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