ST T8T User Manual
T8T
Snubberless™, logic level and standard 8 A Triacs
Features
■ Medium current Triac
■ High static and dynamic commutation
■ Low thermal resistance with clip bonding
■ Packages is RoHS (2002/95/EC) compliant
■ 600 V V
■
UL certified (ref. file E81734)
RM
Applications
■ Value sensitive application
■ General purpose ac line load switching
■ Motor control circuits in power tools
■ Small home appliances, lighting
■ Inrush current limiting circuits
■ Overvoltage crowbar protection
Description
Available in through-hole, the T8T series of Triacs
can be used as on/off or phase angle control
function in general purpose ac switching where
high commutation capability is required.
A2
G
A1
A1
A2
G
TO-220AB insulated
(T8xxT-6I)
Table 1. Device summary
Order code Symbol Value
3Q
I
T810T-6I
T820T-6I
T835T-6I
T825T-6I
GT
logic level
3Q
I
GT
Snubberless
4Q
I
GT
standard
20 / 35 mA
10 mA
25 mA
This series can be designed-in in many value
sensitive appliances thanks to the parameters
guidance provided in the following pages.
Provides insulation rated at 2500 V rms
(TO-220AB insulated package).
TM: Snubberless is a trademark of STMicroelectronics
September 2011 Doc ID 16192 Rev 3 1/9
www.st.com
9
Characteristics T8T
1 Characteristics
Table 2. Absolute ratings (limiting values; Tj = 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
I
T(RMS)
I
dI/dt
V
DSM
V
I
P
G(AV)
T
On-state rms current (full sine wave) Tc = 97 °C 8 A
Non repetitive surge peak on-state current
TSM
(full cycle, Tj initial = 25 °C)
²
tI²t Value for fusing tp = 10 ms 26 A²s
I
Critical rate of rise of on-state current I
= 2 x IGT
G
tr ≤ 100 ns
/
Non repetitive surge peak off-state
voltage
RSM
Peak gate current tp = 20 µs Tj = 125 °C 4 A
GM
F = 50 Hz t
F = 60 Hz t
F = 60 Hz T
= 10 ms Tj = 25 °C
t
p
= 20 ms 60
p
= 16.7 ms 63
p
= 125 °C 50 A/µs
j
V
DRM/VRRM
+ 100
Average gate power dissipation Tj = 125 °C 1 W
Storage junction temperature range - 40 to + 150 °C
stg
Operating junction temperature range - 40 to + 125 °C
T
j
A
V
2/9 Doc ID 16192 Rev 3
T8T Characteristics
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
T8xxT
Symbol Test conditions Quadrant
T810T T820T T825T T835T
I
GT
V
V
I
H
(1)
VD = 12 V, RL = 30 Ω
I - II - III
MAX.
IV 40
VD = V
GT
Tj = 25 °C
VD = V
GD
(2)
= 125 °C
T
j
IT = 500 mA MAX. 15 25 30 40 mA
, RL = 30 Ω,
DRM
, RL = 3.3 kΩ,
DRM
ALL MAX. 1.3 V
ALL MIN. 0.2 V
I - III
IG = 1.2 I
I
L
GT
MAX.
10 20 25 35
20 35 40 50
II 25 40 70 70
dV/dt
(di/dt)c
(2)
VD = 67% V
DRM,
gate open
Tj = 125 °C
= 150 °C
T
j
(3)
MIN.
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs 2 4.5
Without snubber 3.4 8
(2)
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs 1 2
Tj = 125 °C
= 150 °C
T
j
MIN.
(3)
100 750 500 2000
50 500 300 1000
5.4
2.5
Without snubber 2 6.5
1. Minimum IGT is guaranted at 5% of IGT max.
2. For both polarities of A2 referenced to A1.
3. Derating information for excess temperature above T
Table 4. Static characteristics
max.
j
Unit
mA
mAIV 40
V/µs
A/ms
Symbol Test conditions Value Unit
(1)
V
ITM = 11.3 A, tp = 380 µs Tj = 25 °C MAX. 1.60 V
T
(1)
V
TO
R
D
I
DRM
I
RRM
1. For both polarities of A2 referenced to A1.
2. Derating information for excess temperature above T
Threshold voltage Tj = 125 °C MAX. 0.87 V
(1)
Dynamic resistance Tj = 125 °C MAX. 60 mΩ
Tj = 25 °C
V
DRM
V
= 0.9 x V
D
= V
RRM
DRM
max.
j
= 125 °C 1
T
j
Tj = 150 °C
(2)
MAX.
TYP. 1.9
5µA
Doc ID 16192 Rev 3 3/9
mA
Loading...