T820W
®
MAIN FEATURES
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT
8A
600 and 800 V
20 to 30 mA
DESCRIPTION
Based on ST’ Snubberless technology providing high
commutation performances, the T820-600W/800W
are specially recommended for use on inductive
loads, thanks to their high commutation performances, such as washing-machines drum motor
controllers. They comply with UL standards (ref.
E81734).
T830W
8A SNUBBERLESS™ TRIAC
A2
G
A1
G
A2
A1
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
2
I
tI
dI/dt Critical rate of rise of on-state current
V
DSM/VRSM
I
GM
P
G(AV)
T
stg
T
j
March 2004 - Ed: 2
RMS on-state current (Full sine wave) Tc= 100°C 8 A
Non repetitive surge peak on-state
current (Full cycle, T
2
t Value for fusing tp = 10 ms 55 A2s
initial = 25°C )
j
F = 50Hz t = 20ms 100 A
F = 60Hz t = 16.7ms 105
F = 120 Hz Tj = 125°C 50 A/µs
=2xIGT,tr≤ 100ns
I
G
Non repetitive surge peak off-state
voltage
tp = 10ms Tj = 25°C V
DRM/VRRM
+ 100
Peak gate current tp = 20µs Tj = 125°C 4 A
Average gate power dissipation Tj = 125°C 1 W
Storage junction temperature range
Operating junction temperature range
-40to+150
-40to+125
V
°C
1/5
T820W / T830W
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions Quadrant T820 T830 Unit
(1)
I
GT
VD=12V RL=33Ω I-II-III MAX. 20 30 mA
V
GT
V
GD
(2)
I
H
I
L
VD=V
DRMRL
=3.3kΩ Tj = 125°C I-II-III MIN. 0.2 V
IT= 250mA MAX. 35 50 mA
IG= 1.2I
GT
I-II-III MAX. 1.3 V
I - III MAX. 50 70 mA
II MAX. 60 80 mA
(2)
dV/dt
(dI/dt)c
VD=67% V
(2)
Without snubber Tj = 125°C MIN. 4.5 5.5 A/ms
Gate open Tj = 125°C MIN. 300 500 V/µs
DRM
STATIC CHARACTERISTICS
Symbol Test Conditions Value Unit
(2)
V
TM
V
TO
R
d
I
DRM
I
RRM
Note 1: Minimum IGT is guaranted at 5% of IGT max.
Note 2: For both polarities of A2 referenced to A1.
ITM= 11A tp = 380µs Tj = 25°C MAX. 1.4 V
(2)
Threshold voltage Tj = 125°C MAX. 0.85 V
(2)
Dynamic resistance Tj = 125°C MAX. 40 mΩ
V
DRM=VRRM
Tj = 25°C
Tj = 125°C
MAX 5
1
mA
µA
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-a) Junction to ambient 60 °C/W
Rth(j-c) Junction to case (AC) 3.1 °C/W
PRODUCT SELECTOR
Part Number Voltage Sensitivity Type Package
T820-600W 600V 20 mA Snubberless ISOWATT220AB
T820-800W 800V 20 mA Snubberless ISOWATT220AB
T830-600W 600V 30 mA Snubberless ISOWATT220AB
T830-800W 800V 30 mA Snubberless ISOWATT220AB
2/5
ORDERING INFORMATION
T820W / T830W
T 8 xx - x00 W
TRIAC SERIES
CURRENT: 8A
VOLTAGE:
W: ISOWATT220AB
600: 600V
800: 800V
SENSITIVITY:
20: 20mA
30: 30mA
OTHER INFORMATION
Part Number Marking Weight Base quantity Packing mode
T820-600W T820600W 2.3 g 50 Tube
T820-800W T820800W 2.3 g 50 Tube
T830-600W T830600W 2.3 g 50 Tube
T830-800W T830800W 2.3 g 50 Tube
PACKAGE:
Fig. 1: Maximum power dissipation versus RMS
on-state current.
P(W)
9
α=180°
8
7
6
5
4
3
2
1
0
012345678
IT(RMS)(A)
180°
α
α
Fig. 2: RMS on-state current versus case temperature.
IT(RMS)(A)
10
9
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125
Tc(°C)
α=180°
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
1.E+00
Zth(j-c)
1.E-01
1.E-02
1.E-03
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Zth(j-a)
tp(s)
Fig. 4: On-state characteristics (maximum val
-
ues).
ITM(A)
100
Tj=25°C
10
1
0123456
VTM(V)
Tj=125°C
Tj max. :
Vto = 0.85 V
Rd = 40 mΩ
3/5
T820W / T830W
Fig. 5: Surge peak on-state current versus number
of cycles.
ITSM(A)
110
100
90
80
70
60
50
40
30
20
10
0
1 10 100 1000
Repetitive
Tc=100°C
Non repetitive
Tj initial=25°C
Number of cycles
t=20ms
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus junc
tion temperature (typical values).
IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25°C]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
IGT
IH & IL
Tj(°C)
Fig. 6: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponding value of I
ITSM(A), I t(A s)
1000
100
10
0.01 0.10 1.00 10.00
22
dI/dt limitation:
50A/µs
2
t.
tp(ms)
Fig. 8: Relative variation of critical rate of decrease
of main current versus reapplied dV/dt (typical val
ues).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1 1.0 10.0 100.0
dV/dt (V/µs)
Tj initial=25°C
ITSM
I²t
-
Fig. 9: Relative variation of critical rate of decrease
of main current versus junction temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C]
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125
4/5
Tj(°C)
PACKAGE MECHANICAL DATA
ISOWATT220AB
T820W / T830W
DIMENSIONS
REF.
A 4.40 4.60 0.173 0.181
B 2.50 2.70 0.098 0.106
D 2.50 2.75 0.098 0.108
E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.40 2.70 0.094 0.106
H 10.00 10.40 0.394 0.409
L2 16.00 typ. 0.630 typ.
L3 28.60 30.60 1.125 1.205
L4 9.80 10.60 0.386 0.417
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366
Diam 3.00 3.20 0.118 0.126
Millimeters Inches
Min. Max. Min. Max.
■
Cooling method : C
■
Recommended torque value : 0.55 m.N.
■
Maximum torque value : 0.70 m.N.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may resultfrom its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2004 STMicroelectronics - All rights reserved.
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