ST T810H User Manual

High temperature 8 A sensitive TRIACs

Features

■ Medium current TRIAC

■ Logic level sensitive TRIAC

■ 150 °C max. T

■ Clip bounding

■ RoHS (2002/95/EC) compliant packages

Applications

■ The T810H is designed for the control of AC

actuators in appliances and industrial systems.

■ The multi-port drive of the microcontroller can

control the multiple loads of such appliances and systems through these sensitive gate TRIACs.

turn-off commutation

j

A2

D2PAK

T810H-6G

T810H

A2

G

A1

A2

G

A2

A1

TO-220AB

T810H-6T

G

A2

A1

Description

Specifically designed to operate at 150 °C, the new 8 A T810H TRIACs provide an enhanced performance in terms of power loss and thermal dissipation. This allows the optimization of the heatsink size, leading to space and cost effectiveness when compared to electromechanical solutions.

Based on ST logic level technology, they offer an I

lower than 10 mA and specified minimal

GT

commutation and high noise immunity levels valid up to the T

max.

j

Table 1. Device summary

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT MAX

8A

600 V

10 mA

May 2009 Doc ID 15714 Rev 1 1/10

www.st.com

10

Characteristics T810H

1 Characteristics

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

I

T(RMS)

I

TSM

²

tI

I

dI/dt

V

DSM/VRSM

I

GM

P

G(AV)

T

stg

T

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

On-state rms current (full sine wave) D2PAK, TO-220AB Tc = 135 °C 8 A

Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C)

²

t Value for fusing tp = 10 ms 42 A²s

Critical rate of rise of on-state current I

= 2 x IGT , tr ≤ 100 ns

G

Non repetitive surge peak off-state voltage

F = 60 Hz t = 16.7 ms 84

F = 50 Hz t = 20 ms 80

F = 120 Hz T

= 10 ms Tj = 25 °C

t

p

= 150 °C 50 A/µs

j

V

DRM/VRRM

Peak gate current tp = 20 µs Tj = 150 °C 4 A

Average gate power dissipation Tj = 150 °C 1 W

Storage junction temperature range Operating junction temperature range

j

- 40 to + 150

+ 100

Symbol Test conditions Quadrant Min Max. Unit

I

GT

V

GT

V

GD

(1)

I

H

VD = 12 V RL = 33 Ω

VD = V

, RL = 3.3 kΩ I - II - III 0.15 V

DRM

IT = 100 mA 25 mA

I - II - III 1 10 mA

I - II - III 1.0 V

I - III 30

I

L

dV/dt

(dI/dt)c

1. For both polarities of A2 referenced to A1.

IG = 1.2 I

(1)

VD = 67% V

Logic level, 0.1 V/µs, Tj = 150 °C 11.4

(1)

Logic level, 15 V/µs, T

GT

II 35

gate open, Tj = 150 °C 75 V/µs

DRM,

= 150 °C 3.0

j

A

V

°C

mA

A/ms

2/10 Doc ID 15714 Rev 1

T810H Characteristics

Table 4. Static characteristics

Symbol Test conditions Value Unit

(1)

V

T

V

t0

R

d

ITM = 11.3 A, tp = 380 µs Tj = 25 °C MAX. 1.5 V

(1)

Threshold voltage Tj = 150 °C MAX. 0.80 V

(1)

Dynamic resistance Tj = 150 °C MAX. 55.0 mΩ

Tj = 25 °C MAX. 5 µA

V

= V

I

DRM

I

RRM

V

DRM

D/VR

RRM

= 150 °C MAX. 3.1

T

j

= 400 V (at peak mains voltage) Tj = 150 °C MAX. 2.5

= 200 V (at peak mains voltage) Tj = 150 °C MAX. 2.0

1. for both polarities of A2 referenced to A1.

Table 5. Thermal resistance

Symbol Parameter Value Unit

R

th(j-c)

R

th(j-a)

Figure 1. Maximum power dissipation versus

P(W)

10

9

8

7

6

5

4

3

2

1

0

012345678

Junction to case (AC) D2PAK / TO-220AB 1.60

S = 1 cm

2

D2PA K 4 5

Junction to ambient

TO-220AB 60

Figure 2. On-state rms current versus case

on-state rms current (full cycle)

I

(A)

T(RMS)

I

T(RMS)

10

9

8

7

6

5

4

3

2

1

0

0 25 50 75 100 125 150

temperature (full cycle)

(A)

TC(°C)

mAV

°C/W

Doc ID 15714 Rev 1 3/10