ST T630W User Manual
T630W
6 A Snubberless™ Triac
Features
■ I
■ V
T(RMS)
DRM
= 6 A
= V
= 600 and 800 V
RRM
Description
The high commutation performance of this device
is based on Snubberless technology from ST. The
T630W is especially suited for high inductance
loads. This device complies with UL standards
(Ref. E81734).
A2
G
A1
A1
A2
G
ISOWATT220AB
(Plastic)
Table 1. Device summary
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT
6A
600 and 800 V
30 mA
February 2010 Doc ID 3764 Rev 3 1/8
www.st.com
8
Characteristics T630W
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
dI/dt
I
P
G(AV)
T
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
On-state rms current (full sine wave) Tc = 105°C 6 A
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
²
tI²t Value for fusing tp = 10 ms 36 A²s
I
Critical rate of rise of on-state
current I
Peak gate current tp = 20 µs Tj = 125°C 4 A
GM
= 2 x IGT , tr ≤ 100 ns
G
F = 50 Hz t = 20 ms 80
F = 60 Hz t = 16.7 ms 84
F = 120 Hz 50 A/µs
Average gate power dissipation Tj = 125°C 1 W
Storage junction temperature range
stg
T
Operating junction temperature range
j
- 40 to + 150
- 40 to + 125
Symbol Test conditions Quadrant Value Unit
(1)
I
GT
V
GT
V
GD
(2)
I
H
I
L
dV/dt
(dI/dt)c
VD = 12 V RL = 30 Ω
VD = V
RL = 3.3 kΩ Tj = 125 °C I - II - III Min. 0.2 V
DRM
IT = 100 mA Max. 50 mA
IG = 1.2 I
(2)
VD = 67 %V
(2)
Without snubber Tj = 125 °C Min. 4.5 A/ms
GT
gate open Tj = 125 °C Min. 500 V/µs
DRM
I - II - III Max. 30 mA
I - II - III Max. 1.3 V
I - III
70
Max.
II 80
A
°C
mA
1. Minimum IGT is guaranted at 5% of IGT max.
2. For both polarities of A2 referenced to A1
Table 4. Static characteristics
Symbol Test conditions Value Unit
(1)
V
V
t0
R
I
DRM
I
RRM
1. For both polarities of A2 referenced to A1
ITM = 8.5 A tp = 380 µs Tj = 25 °C Max. 1.4 V
T
(1)
Threshold voltage Tj = 125 °C Max. 0.85 V
(1)
Dynamic resistance Tj = 125 °C Max. 50 mΩ
d
Tj = 25 °C
V
= V
DRM
RRM
T
j
2/8 Doc ID 3764 Rev 3
Max.
5µA
= 125 °C 1 mA
T630W Characteristics
Table 5. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
R
th(j-a)
Figure 1. Maximum power dissipation versus
P(W)
7
6
5
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Figure 3. Relative variation of thermal
1.E+00
1.E-01
Junction to case (AC) (360° conduction angle) 3.4 °C/W
Junction to ambient 50 °C/W
Figure 2. On-state rms current versus case
α=180°
rms on-state current
I (A)
T(RMS)
I (A)
T(RMS)
7
6
5
4
3
180°
α
α
2
1
0
0 25 50 75 100 125
temperature
T (°C)
C
Figure 4. On-state characteristics
impedance versus pulse duration
K=[Z /R
th th
Z
th(j-c)
]
Z
th(j-a)
100
10
I (A)
TM
(maximum values)
T max.
j
V = 0.85V
t0
Ω
R = 50 m
d
T=jT max.
j
α
=180°
1.E-02
t (s)
1.E-03
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
p
Figure 5. Surge peak on-state current versus
number of cycles
I (A)
TSM
90
80
70
60
50
40
30
20
10
0
1 10 100 1000
Repetitive
T =105°C
C
Non repetitive
T initial=25°C
j
Number of cycles
t=20ms
One cycle
Doc ID 3764 Rev 3 3/8
T = 25°C
j
V (V)
1
0123456
TM
Figure 6. Non-repetitive surge peak on-state
current for a sinusoidal
I (A), I t (A s)
1000
100
10
0.01 0.10 1.00 10.00
22
TSM
T initial=25°C
j
dI/dt limitation:
50A/µs
2
I t
Pulse with width t < 10 ms and corresponding value of I t
p
I
TSM
2
t (ms)
p
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