ST T610H User Manual

Features

■ Medium current TRIAC

■ Logic level sensitive TRIAC

■ 150 °C max. T

■ Clip bounding

■ RoHS (2002/95/EC) compliant package

turn-off commutation

j

T610H

High temperature 6 A sensitive TRIACs

A2

G

A1

Applications

■ The T610H is designed for the control of AC

actuators in appliances and industrial systems.

■ The multi-port drive of the microcontroller can

control the multiple loads of such appliances
and systems through this sensitive gate
TRIAC.

Description

Specifically designed to operate at 150 °C, the
new 6 A T610H TRIAC provides an enhanced
performance in terms of power loss and thermal
dissipation. This allows the optimization of the
heatsink size, leading to space and cost
effectiveness when compared to electro­mechanical solutions.

Based on ST logic level technology, the T610H
offers an I
minimal commutation and high noise immunity
levels valid up to the T

lower than 10 mA and specified

GT

max.

j

A2

A2

A1

TO-220AB

T610H-6T

Table 1. Device summary

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT MAX

6A

600 V

10 mA

G

May 2009 Doc ID 15713 Rev 1 1/9

www.st.com

9

Characteristics T610H

1 Characteristics

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

I

T(RMS)

I

TSM

²

tI

I

dI/dt

V

DSM/VRSM

I

GM

P

G(AV)

T

stg

T

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

On-state rms current (full sine wave) Tc = 138 °C 6 A

Non repetitive surge peak on-state
current (full cycle, Tj initial = 25 °C)

²

t Value for fusing tp = 10 ms 24 A²s

Critical rate of rise of on-state current
I

= 2 x IGT , tr ≤ 100 ns

G

Non repetitive surge peak off-state
voltage

F = 60 Hz t = 16.7 ms 63

F = 50 Hz t = 20 ms 60

F = 120 Hz T

= 10 ms Tj = 25 °C

t

p

= 150 °C 50 A/µs

j

V

DRM/VRRM

Peak gate current tp = 20 µs Tj = 150 °C 4 A

Average gate power dissipation Tj = 150 °C 1 W

Storage junction temperature range
Operating junction temperature range

j

- 40 to + 150

- 40 to + 150

+ 100

Symbol Test conditions Quadrant Min. Max. Unit

I

GT

V

GT

V

GD

(1)

I

H

VD = 12 V RL = 33 Ω

VD = V

, RL = 3.3 kΩ I - II - III 0.15 V

DRM

IT = 100 mA 25 mA

I - II - III 1 10 mA

I - II - III 1.0 V

I - III 30

I

L

dV/dt

(dI/dt)c

1. For both polarities of A2 referenced to A1.

IG = 1.2 I

(1)

VD = 67% V

Logic level, 0.1 V/µs, Tj = 150 °C 8.7

(1)

Logic level, 15 V/µs, T

GT

II 35

gate open, Tj = 150 °C 75 V/µs

DRM,

= 150 °C 2.3

j

A

V

°C

mA

A/ms

2/9 Doc ID 15713 Rev 1

T610H Characteristics

(A)

Table 4. Static characteristics

Symbol Test conditions Value Unit

(1)

V

T

V

t0

R

d

ITM = 8.5 A, tp = 380 µs Tj = 25 °C MAX. 1.5 V

(1)

Threshold voltage Tj = 150 °C MAX. 0.8 V

(1)

Dynamic resistance Tj = 150 °C MAX. 62 mΩ

Tj = 25 °C MAX. 5 µA

V

= V

I

DRM

I

RRM

V

DRM

D/VR

D/VR

RRM

= 150 °C MAX. 2.7

T

j

= 400 V (at peak mains voltage) Tj = 150 °C MAX. 2.2

= 200 V (at peak mains voltage) Tj = 150 °C MAX. 1.8

1. for both polarities of A2 referenced to A1.

Table 5. Thermal resistance

Symbol Parameter Value Unit

R

th(j-c)

R

th(j-a)

Figure 1. Maximum power dissipation versus

Junction to case (AC) 1.8

Junction to ambient 60

Figure 2. On-state rms current versus case

on-state rms current (full cycle)

temperature (full cycle)

mAV

°C/W

P(W)

7

6

5

4

3

2

1

0

0123456

I

T(RMS)

(A)

Figure 3. On-state rms current versus

ambient temperature (free air
convection, full cycle)

I

T(RMS)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0 25 50 75 100 125 150

Ta(°C)

I

(A)

T(RMS)

7

6

5

4

3

2

1

0

0 25 50 75 100 125 150

TC(°C)

Figure 4. Relative variation of thermal

impedance, versus pulse duration

K=[Zth/Rth]

1.E+00

Zth(j-c)

1.E-01

Zth(j-a)

1.E-02

tp(s)

1.E-03

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

Doc ID 15713 Rev 1 3/9

Characteristics T610H

Figure 5. Relative variation of gate trigger

current and voltage versus junction
temperature (typical values)

IGT,VGT[Tj]/IGT,VGT[Tj=25 °C]

2.5

2.0

1.5

1.0

0.5

0.0

-50 -25 0 25 50 75 100 125 150

IGTQ3

IGTQ1-Q2

VGTQ1- Q2 -Q3

Tj(°C)

Figure 7. Surge peak on-state current

versus number of cycles

I

(A)

TSM

65

60

55

50

45

40

35

30

25

20

15

10

Repetitive

T

=138 °C

5

C

0

1 10 100 1000

Non repetitive

initial=25 °C

T

j

Number of cycles

t=20ms

One cycle

Figure 6. Relative variation of holding and

latching current versus junction
temperature (typical values)

IH,IL[Tj]/IH,IL[Tj=25 °C]

2.0

1.5

1.0

I

L

0.5

Tj(°C)

0.0

-50 -25 0 25 50 75 100 125 150

I

H

Figure 8. Non-repetitive surge peak on-state

current and corresponding value

2

of I

t

I

(A), I²t (A²s)

TSM

1000

100

10

Sinusoidal pulse width tp< 10 ms

1

0.01 0.10 1.00 10.00

dI/dt limitation: 50 A/µs

Tjinitial=25 °C

I

TSM

I²t

tP(ms)

Figure 9. On-state characteristics

(maximum values)

ITM(A)

100

Tjmax :

V

= 0.80 V

to

R

= 62 mΩ

d

10

Tj=150 °C

Tj=25 °C

VTM(V)

1

012345

4/9 Doc ID 15713 Rev 1

Figure 10. Relative variation of critical rate of

decrease of main current versus
junction temperature

(dI/dt)C[Tj]/(dI/dt)c[Tj=150 °C]

11

10

9

8

7

6

5

4

3

2

1

0

25 50 75 100 125 150

Tj(°C)

T610H Characteristics

Figure 11. Relative variation of critical rate of

decrease of main current versus
reapplied dV/dt (typical values)

(dI/dt)c[(dV/dt)c] / Specified (dI/dt)

4

3

2

1

0

0.1 1.0 10.0 100.0

c

(dV/dt)C(V/µs)

Figure 13. Variation of leakage current versus

junction temperature for different
values of blocking voltage

I

[Tj;V

DRM/IRRM

1.0E+00

1.0E-01

V

DRM=VRRM

1.0E-02

DRM=VRRM

1.0E-03

1.0E-04

25 50 75 100 125 150

DRM/VRRM

V

=200 VV

=200 V

]/I

DRM/IRRM

DRM=VRRM

DRM=VRRM

[Tj=150°C;600V]

V

DRM=VRRM

DRM=VRRM

=400 VV

=400 V

Tj(°C)

=600 VV

=600 V

Figure 12. Relative variation of static dV/dt

immunity versus junction
temperature

dV/dt [Tj]/dV/dt[Tj=150 °C]

15
14
13
12
11
10

9
8
7
6
5
4
3
2
1
0

25 50 75 100 125 150

Tj(°C)

VD=VR=400 V

Figure 14. Acceptable case to ambient thermal

resistance versus repetitive peak
off-state voltage

R

(°C/W)

th(c-a)

70

65

60

55

50

45

40

35

30

25

20

15

10

5

0

200 300 400 500 600

V

AC PEAK

(V)

R

th(j-c)

T

J

=1.8 °C/W

=150 °C

Doc ID 15713 Rev 1 5/9

Ordering information scheme T610H

2 Ordering information scheme

Figure 15. Ordering information scheme

T 6 10 H - 6 T

Triac series
Current

6 = 6 A

Sensitivity

10 = 10 mA

High temperature
Voltage

6 = 600 V

Package

T = TO-220AB

6/9 Doc ID 15713 Rev 1

T610H Package information

3 Package information

● Epoxy meets UL94, V0

● Recommended torque 0.4 to 0.6 N·m

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK

Table 6. TO-220AB dimensions

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

.

Dimensions

Ref.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 15.20 15.90 0.598 0.625

a1 3.75 0.147

B

Ø I

L

A

I4

l3

a1

l2

a2

C

b2

c2

a2 13.00 14.00 0.511 0.551

B 10.00 10.40 0.393 0.409

b1 0.61 0.88 0.024 0.034

F

b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181

c1 0.49 0.70 0.019 0.027

c2 2.40 2.72 0.094 0.107

e 2.40 2.70 0.094 0.106

M

b1

e

c1

F 6.20 6.60 0.244 0.259

ØI 3.75 3.85 0.147 0.151

I4 15.80 16.40 16.80 0.622 0.646 0.661

L 2.65 2.95 0.104 0.116

l2 1.14 1.70 0.044 0.066

l3 1.14 1.70 0.044 0.066

M2.60 0.102

Doc ID 15713 Rev 1 7/9

Ordering information T610H

4 Ordering information

Table 7. Ordering information

Order code Marking Package Weight Base qty Delivery mode

T610H-6T T610H 6T TO-220AB 2.3 g 50 Tube

5 Revision history

Table 8. Document revision history

Date Revision Changes

15-May-2009 1 First issue.

8/9 Doc ID 15713 Rev 1

T610H

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Doc ID 15713 Rev 1 9/9