ST T4 User Manual
®
T4 Series
SNUBBERLESS™ & LOGIC LEVEL
Table 1: Main Features
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT (Q1)
4A
600 to 800 V
5 to 35 mA
DESCRIPTION
Based on ST’s Snubberless / Logic level technology providing high commutation performances,
the T4 series is suitable for use on AC inductive
loads.
They are recommended for applications using
universal motors, electrovalves.... such as kitchen
aid equipments, power tools, dishwashers,...
Available in a fully insulated package, the T4...-
...W version complies with UL standards (ref.
E81734).
A1
DPAK
(T4-B)
A1
A2
G
TO-220AB
(T4-T)
4A TRIACS
A2
G
A1
A2
A2
G
A1
A2
G
IPAK
(T4-H)
A2
A1
A2
G
ISOWATT220AB
(T4-W)
A2
Table 2: Order Codes
Part Number Marking
T405-xxxB
T405-xxxB-TR
T405-xxxH
T405-xxxT
T405-xxxW
T410-xxxB
T410-xxxB-TR
T410-xxxH
T4105-xxxT
T410-xxxW
T435-xxxB
T435-xxxB-TR
T435-xxxH
T435-xxxT
T435-xxxW
REV. 7January 2006
See page table 8 on
page 9
1/10
T4 Series
Table 3: Absolute Maximum Ratings
Symbol Parameter Value Unit
IPAK/DPAK/
I
T(RMS)
RMS on-state current (full sine
wave)
TO-220AB
ISOWATT220AB
I
TSM
²
I
tI
dI/dt
I
GM
P
G(AV)
T
stg
T
j
Non repetitive surge peak on-state
current (full cycle, T
²
t Value for fusing
initial = 25°C)
j
Critical rate of rise of on-state current I
= 2 x IGT , tr ≤ 100 ns
G
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Tables 4: Electrical Characteristics (T
= 25°C, unless otherwise specified)
j
F = 50 Hz t = 20 ms 30
F = 60 Hz t = 16.7 ms 31
= 10 ms
t
p
F = 120 Hz
t
= 20 µs Tj = 125°C
p
Symbol Test Conditions Quadrant
I
(1)
GT
V
GT
V
GD
I
(2) IT = 100 mA
H
I
L
V
= 12 V RL = 30 Ω
D
VD = V
T
= 125°C
j
IG = 1.2 I
RL = 3.3 kΩ
DRM
GT
I - II - III MAX. 5 10 35 mA
I - II - III MAX.
I - II - III MIN.
I - III
II 15 30 60
= 110°C
T
c
4A
T
= 105°C
c
A
²
A
= 125°C
T
j
5.1
50 A/µs
4A
T
= 125°C
j
1W
- 40 to + 150
- 40 to + 125
°C
T4
Unit
T405 T410 T435
1.3
0.2
V
V
MAX. 10 15 35 mA
10 25 50
MAX.
mA
s
V
= 67 %V
dV/dt (2)
D
T
= 125°C
j
(dV/dt)c = 0.1 V/µs T
(dI/dt)c (2)
(dV/dt)c = 10 V/µs T
Without snubber T
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1.
2/10
gate open
DRM
= 125°C
j
= 125°C
j
= 125°C
j
MIN. 20 40 400 V/µs
1.8 2.7 -
MIN.
0.9 2.0 -
A/ms
--2.5
T4 Series
Table 5: Static Characteristics
Symbol Test Conditions Value Unit
V
(2) ITM = 5.5 A tp = 380 µs Tj = 25°C
T
V
(2)
to
(2)
R
d
I
DRM
I
RRM
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1.
Threshold voltage
Dynamic resistance
V
= V
DRM
RRM
Tj = 125°C
Tj = 125°C
Tj = 25°C
T
= 125°C
j
Table 6: Thermal resistance
Symbol Parameter Value Unit
MAX. 1.56 V
MAX. 0.89 V
MAX. 120 mΩ
5µA
MAX.
1mA
R
th(j-c)
R
th(j-a)
S = Copper surface under tab.
Junction to case (AC)
Junction to ambient
S = 0.5 cm
IPAK / DPAK / TO-220AB 2.6
ISOWATT220AB 4.0
²
DPAK 70
TO-220AB / ISOWATT220AB 60
IPAK 100
°C/W
°C/W
3/10
Loading...