ST T3035H, T3050H User Manual
T3035H, T3050H
Snubberless™ high temperature 30 A Triacs
Features
■ High current Triac
■ High immunity level
■ Low thermal resistance with clip bounding
■ RoHS (2002/95/EC) compliant package
■ Very high commutation (3Q) at 150 °C
capability
■ UL certified (ref. file E81734)
Applications
Thanks to its high electrical noise immunity level
and its strong current robustness, the T30xxH
series is designed for the control of AC actuators
in appliances and industrial systems.
Description
Specifically designed to operate at 150 °C, the
new 30 A T30xxH Triacs provide very high
dynamic performance and enhanced
performance in terms of power loss and thermal
dissipation. This allows optimizing the heatsink
size, leading to space and cost effectiveness
when compared to electro-mechanical solutions.
A2
G
A1
A2
A1
A2
G
TO-220AB
TO-220AB insulated
(T30xxH-6T)
Table 1. Device summary
Symbol Value
I
T(rms)
V
DRM/VRRM
I
GT
A1
A2
G
(T30xxH-6l)
30 A
600 V
35 or 50 mA
Based on ST Snubberless™ technology, they
offer a specified minimal commutation and high
noise immunity levels valid up to the T
max.
j
The T30xxH series optimize safely the control of
universal motors and of inductive loads found in
power tools and major appliances.
By using an internal ceramic pad, the T30xxH-6I
provides voltage insulation (rated at 2500 V rms).
TM: Snubberless is a trademark of STMicroelectronics
September 2011 Doc ID 17029 Rev 4 1/9
www.st.com
9
Characteristics T3035H T3050H
1 Characteristics
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
TO-220AB Tc = 121 °C
I
T(RMS)
I
dI/dt
V
V
P
T
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
On-state rms current (full sine wave)
Non repetitive surge peak on-state
TSM
current (full cycle, T
²
tI²t Value for fusing tp = 10 ms 487 A²s
I
initial = 25 °C)
j
Critical rate of rise of on-state current
= 2 x IGT , tr ≤ 100 ns
I
G
/
Non repetitive surge peak
DSM
off-state volt-age
RSM
Peak gate current tp = 20 µs Tj = 150 °C 4 A
I
GM
Average gate power dissipation Tj = 150 °C 1 W
G(AV)
Storage junction temperature range
stg
T
Operating junction temperature range
j
TO-220AB
insul.
Tc = 92 °C
F = 50 Hz t = 20 ms 270
F = 60 Hz t = 16.7 ms 284
F = 120 Hz T
= 10 µs Tj = 25 °C
t
p
= 150 °C 50 A/µs
j
30 A
V
DSM/VRSM
+100
-40 to +150
-40 to +150
A
V
°C
Symbol Test conditions Quadrant
(1)
IGT
I - II - III MAX. 35 50 mA
VD = 12 V RL = 33 Ω
V
GT
V
I
H
VD = V
GD
(2)
IT = 500 mA MAX. 60 75 mA
RL = 3.3 kΩ I - II - III MIN. 0.15 V
DRM
I - II - III MAX. 1.0 V
I - III
I
IG = 1.2 I
L
(2)
dV/dt
(dI/dt)c
1. Minimum IGT is guaranted at 20 % of IGT max.
2. For both polarities of A2 referenced to A1.
VD = 67 %V
Without snubber
(2)
GT
gate open
DRM
II 90 110
T
= 150 °C
j
= 150 °C
T
j
Val u e
Unit
T3035H T3050H
75 90
MAX.
mA
MIN. 1000 1500 V/µs
MIN. 33 44 A/ms
2/9 Doc ID 17029 Rev 4
T3035H T3050H Characteristics
0
Table 4. Static characteristics
Symbol Test conditions Value Unit
(1)
V
to
d
DRM
RRM
ITM = 42 A tp = 380 µs Tj = 25 °C MAX. 1.55 V
(1)
Threshold voltage Tj = 150 °C MAX. 0.85 V
(1)
Dynamic resistance Tj = 150 °C MAX. 15 mΩ
V
= V
V
V
DRM
D/VR
D/VR
RRM
= 400V (at peak mains voltage) Tj = 150 °C
= 200V (at peak mains voltage)
Tj = 25 °C
MAX.
= 150 °C 8.5
T
j
MAX.
T
= 150 °C 5.5
j
10 µA
7
TM
V
R
I
I
1. for both polarities of A2 referenced to A1.
Table 5. Thermal resistance
Symbol Parameter Value Unit
TO-220AB 0.8
R
R
Figure 1. Maximum power dissipation versus
th(j-c)
th(j-a)
Junction to case (AC)
°C/W
TO-220AB Insul 1.6
Junction to ambient TO-220AB / TO-220AB Insul 60 °C/W
Figure 2. On-state rms current vs case
rms on-state current
temperature
(full cycle 180°)
P(W)
40
35
30
25
20
15
10
5
0
0510
I (A)
15
20 25 30
T(RMS)
I (A)
T(RMS)
35
30
25
20
15
10
5
0
0 25 50 75 100 125 15
TO-220AB- ins
T (°C)
C
TO-220AB
mA
Doc ID 17029 Rev 4 3/9
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