T2035H, T2050H
High temperature 20 A Snubberless™ Triacs
Features
■Medium current Triac
■150 °C max. Tj turn-off commutation
■Low thermal resistance with clip bonding
■Very high 3 quadrant commutation capability
■Packages are RoHS (2002/95/EC) compliant
■UL certified (ref. file E81734)
Applications
Especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum motor.
Description
Available in through-hole and surface mount packages, the T2035H and T2050H Triac series are suitable for general purpose mains power AC switching.
These 20 A Triacs provide a very high switching capability up to junction temperatures of 150 °C.
The heatsink can be reduced, compared to traditional Triacs, according to the high performance at given junction temperatures.
By using an internal ceramic pad, the T20xxH-6I provides voltage insulation (rated at 2500 V rms).
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A2 |
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G |
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A1 |
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A2 |
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G |
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G |
A2 |
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A2 |
A1 |
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A1 |
TO-220AB |
TO-220AB insulated |
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T20xxH-6T |
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T2035H-6I |
A2 |
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A2 |
G |
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A1 |
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D2PAK |
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T20xxH-6G |
Table 1. |
Device summary |
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Symbol |
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Value |
Unit |
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IT(RMS) |
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20 |
A |
VDRM/VRRM |
600 |
V |
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IGT |
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35 or 50 |
mA |
TM: Snubberless is a trademark of STMicroelectronics
August 2011 |
Doc ID 13575 Rev 3 |
1/10 |
www.st.com
Characteristics |
T2035H, T2050H |
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Characteristics |
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Table 2. |
Absolute maximum ratings |
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Symbol |
Parameter |
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Value |
Unit |
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IT(RMS) |
On-state rms current (full sine wave) |
TO-220AB, D2PAK |
Tc = 128 °C |
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20 |
A |
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TO-220AB insulated |
Tc = 108 °C |
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ITSM |
Non repetitive surge peak on-state |
F = 50 Hz |
t = 20 ms |
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200 |
A |
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current (full cycle, Tj initial = 25 °C) |
F = 60 Hz |
t = 16.7 ms |
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210 |
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I²t |
I²t Value for fusing |
tp = 10 ms |
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265 |
A²s |
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dI/dt |
Critical rate of rise of on-state current IG |
F = 120 Hz |
T = 150 °C |
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50 |
A/µs |
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= 2 x IGT, tr ≤ 100 ns |
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j |
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VDSM/VRSM |
Non repetitive surge peak off-state |
tp = 10 ms |
Tj = 25 °C |
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VDRM/VRRM |
V |
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voltage |
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+ 100 |
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IGM |
Peak gate current |
tp = 20 µs |
Tj = 150 °C |
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4 |
A |
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PG(AV) |
Average gate power dissipation |
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Tj = 150 °C |
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1 |
W |
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Tstg |
Storage junction temperature range |
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- 40 to + 150 |
°C |
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Tj |
Operating junction temperature range |
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- 40 to + 150 |
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Table 3. |
Electrical characteristics (Tj = 25 °C, unless otherwise specified) |
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Symbol |
Test conditions |
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Quadrant |
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Value |
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Unit |
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T2035H |
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T2050H |
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(1) |
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I - II - III |
MAX. |
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35 |
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50 |
mA |
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IGT |
VD = 12 V, RL = 33 Ω |
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VGT |
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I - II - III |
MAX. |
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1.0 |
V |
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VGD |
VD = VDRM, RL = 3.3 kΩ |
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I - II - III |
MIN. |
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0.15 |
V |
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(2) |
I = 500 mA |
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MAX. |
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35 |
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75 |
mA |
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H |
T |
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IL |
IG = 1.2 IGT |
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I - III |
MAX. |
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50 |
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90 |
mA |
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II |
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80 |
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110 |
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dV/dt (2) |
VD = 67% VDRM, gate open, Tj = 150 °C |
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MIN. |
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1000 |
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1500 |
V/µs |
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(dI/dt) (2) |
Without snubber, T = 150 °C |
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MIN. |
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27 |
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36 |
A/ms |
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c |
j |
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1.minimum IGT is guaranteed at 20% of IGT max.
2.for both polarities of A2 referenced to A1.
2/10 |
Doc ID 13575 Rev 3 |
T2035H, T2050H |
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Characteristics |
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Table 4. |
Static characteristics |
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Symbol |
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Test conditions |
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Value |
Unit |
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V |
T |
(1) |
I |
= 28 A, t = 380 µs |
T |
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= 25 °C |
MAX. |
1.5 |
V |
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TM |
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p |
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Vt0 |
(1) |
Threshold voltage |
Tj = 150 °C |
MAX. |
0.80 |
V |
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R |
(1) |
Dynamic resistance |
T |
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= 150 °C |
MAX. |
19 |
mΩ |
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d |
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VDRM = VRRM |
Tj = 25 °C |
MAX. |
5 |
µA |
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I |
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Tj = 150 °C |
MAX. |
6.2 |
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DRM |
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IRRM (2) |
V |
/V |
R |
= 400 V (at peak mains voltage) |
T |
j |
= 150 °C |
MAX. |
5.0 |
mA |
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D |
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VD/VR = 200 V (at peak mains voltage) |
Tj = 150 °C |
MAX. |
4.0 |
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1.for both polarities of A2 referenced to A1.
2.tp = 380 µs.
Table 5. |
Thermal resistance |
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Symbol |
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Parameter |
Value |
Unit |
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Rth(j-c) |
Junction to case (AC) |
TO-220AB, D2PAK |
1 |
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TO-220AB Ins |
1.9 |
°C/W |
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Rth(j-a) |
Junction to ambient |
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TO-220AB, TO-220AB insulated |
60 |
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S = 1 cm2 |
D2PAK |
45 |
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Doc ID 13575 Rev 3 |
3/10 |