ST T16T User Manual
T16T
Snubberless™, logic level and standard 16 A Triacs
Features
■ Medium current Triac
■ High static and dynamic commutation
■ Low thermal resistance with clip bonding
■ Packages is RoHS (2002/95/EC) compliant
■ 600 V V
RM
Applications
■ Value sensitive application
■ General purpose ac line load switching
■ Motor control circuits in power tools
■ Small home appliances, lighting
■ Inrush current limiting circuits
■ Overvoltage crowbar protection
Description
Available in through-hole, the T16T series of
Triacs can be used as on/off or phase angle
control function in general purpose ac switching
where high commutation capability is required.
A2
G
A1
A1
A2
G
TO-220AB insulated
(T16xxT-6I)
Table 1. Device summary
Order code Symbol Value
3Q
I
T1610T-6I
T1620T-6I
T1635T-6I
GT
logic level
3Q
I
GT
Snubberless
20 / 35 mA
10 mA
This series can be designed-in in many value
sensitive appliances thanks to the parameters
guidance provided in the following pages.
Provides insulation rated at 2500 V rms
(TO-220AB insulated package).
TM: Snubberless is a trademark of STMicroelectronics
January 2010 Doc ID 16488 Rev 2 1/9
www.st.com
9
Characteristics T16T
1 Characteristics
Table 2. Absolute maximum ratings (limiting values; Tj = 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
I
T(RMS)
I
dI/dt
V
DSM
V
I
P
G(AV)
T
On-state rms current (full sine wave) Tc = 86 °C 16 A
Non repetitive surge peak on-state current (full
TSM
cycle, Tj initial = 25 °C)
²
tI²t Value for fusing tp = 10 ms 105 A²s
I
Critical rate of rise of on-state current I
= 2 x IGT
G
tr ≤ 100 ns
/
Non repetitive surge peak off-state
voltage
RSM
Peak gate current tp = 20 µs Tj = 125 °C 4 A
GM
F = 50 Hz t
F = 60 Hz t
F = 60 Hz T
= 10 ms Tj = 25 °C
t
p
= 20 ms 120
p
= 16.7 ms 126
p
= 125 °C 50 A/µs
j
V
DRM/VRRM
+ 100
Average gate power dissipation Tj = 125 °C 1 W
Storage junction temperature range - 40 to + 150 °C
stg
Operating junction temperature range - 40 to + 125 °C
T
j
A
V
2/9 Doc ID 16488 Rev 2
T16T Characteristics
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
T16xxT
Symbol Test conditions Quadrant
T1610T T1620T T1635T
I
GT
V
V
I
H
GT
GD
I
(1)
VD = 12 V RL = 30 Ω
I - II - III
MAX.
IV
VD = V
Tj = 25 °C
VD = V
= 125 °C
T
j
(2)
IT = 500 mA MAX. 12 25 40 mA
, RL = 3.3 kΩ,
DRM
, RL = 3.3 kΩ,
DRM
ALL MAX. 1.3 V
ALL MIN. 0.2 V
I - III
IG = 1.2 I
L
GT
MAX.
10 20 35
20 35 50
II 30 40 80
dV/dt
(di/dt)c
(2)
VD = 67% V
DRM,
gate open
Tj = 125 °C
= 150 °C
T
j
(3)
MIN.
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs 4
Without snubber 6 16
(2)
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs 1
Tj = 125 °C
= 150 °C
T
j
MIN.
(3)
100 1000 2000
20 500 1000
8
3
Without snubber 3 12
1. minimum IGT is guaranted at 5% of IGT max.
2. for both polarities of A2 referenced to A1.
3. derating information for excess temperature above T
Table 4. Static characteristics
max.
j
Unit
mA
mAIV
V/µs
A/ms
Symbol Test conditions Value Unit
(1)
V
T
V
TO
R
D
I
DRM
I
RRM
1. for both polarities of A2 referenced to A1.
2. derating information for excess temperature above T
ITM = 22.6 A, tp = 380 µs Tj = 25 °C MAX. 1.55 V
(1)
Threshold voltage Tj = 125 °C MAX. 0.85 V
(1)
Dynamic resistance Tj = 125 °C MAX. 30 mΩ
Tj = 25 °C
V
DRM
V
= 0.9 x V
D
= V
RRM
DRM
max.
j
= 125 °C 1
T
j
Tj = 150 °C
(2)
MAX.
TYP. 1.9
5µA
Doc ID 16488 Rev 2 3/9
mA
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