ST T1620W, T1630W User Manual

T1620W, T1630W

Snubberless™ 16A Triacs

Features

■ I

■ V

■ I

= 16 A

T(RMS)

/ V

DRM

GT

RRM

= 20 to 30 mA

= 600, 700 and 800 V

Description

Based on ST’s Snubberless technology providing high commutation performances, the T1620-600W/700W/800W and T1630-600W are especially recommended for use with inductive loads such as rice cookers. They comply with UL standards (ref. E81734).

A2

G

A1

A2

G

ISOWATT220AB

TM: Snubberless is a trademark of STMicroelectronics

October 2011 Doc ID 3759 Rev 1 1/8

www.st.com

8

Characteristics T1620W, T1630W

1 Characteristics

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

I

T(RMS)

I

dI/dt

V

DSM

RSM

P

T

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

On-state rms current (full sine wave) Tc = 80 °C 16 A

Non repetitive surge peak on-state current (full

TSM

cycle, T

²

tI²t Value for fusing tp = 10 ms 220 A²s

I

Critical rate of rise of on-state current I

initial = 25 °C)

j

= 2 x IGT , tr

G

≤ 100 ns

/V

Non repetitive surge peak off-state voltage

I

Peak gate current tp = 20 µs Tj = 125 °C 4 A

GM

Average gate power dissipation Tj = 125 °C 1 W

G(AV)

Storage junction temperature range

stg

T

Operating junction temperature range

j

F = 50 Hz t = 20 ms 200

F = 60 Hz t = 16.7 ms 218

F = 120 Hz T

t

= 10 ms Tj = 25 °C

p

= 125 °C 50 A/µs

j

V

DRM/VRRM

+ 100

- 40 to + 150

- 40 to + 125

Val ue

Symbol Test conditions Quadrant

Unit

T1620 T1630

I

GT

V

GT

V

GD

(2)

I

H

I

L

dV/dt

(dI/dt)c

(2)

(1)

VD = 12 V RL = 30 Ω

VD = V

, RL = 3.3 kΩ, Tj = 125 °C I - II - III MIN. 0.2 V

DRM

IT = 250 mA MAX. 35 50 mA

IG = 1.2 I

(2)

VD = 67% V

Without snubber, Tj = 125 °C MIN. 8.5 11 A/ms

GT

gate open, Tj = 125 °C MIN. 300 500 V/µs

DRM,

I - II - III MAX. 20 30 mA

I - II - III MAX. 1.3 V

I - III

70 80

MAX.

II 80 100

A

V

°C

mA

1. minimum IGT is guaranted at 5% of IGT max.

2. for both polarities of A2 referenced to A1.

2/8 Doc ID 3759 Rev 1

T1620W, T1630W Characteristics

Table 3. Static characteristics

Symbol Test conditions Value Unit

(1)

V

TO

R

I I

ITM = 22.5 A, tp = 380 µs Tj = 25 °C MAX. 1.4 V

T

(1)

Threshold voltage Tj = 125 °C MAX. 0.85 V

(1)

Dynamic resistance Tj = 125 °C MAX. 250 mΩ

D

DRM

RRM

V

DRM

= V

RRM

Tj = 25 °C

MAX.

T

= 125 °C 1 mA

j

5µA

1. for both polarities of A2 referenced to A1.

Table 4. Thermal resistance

Symbol Parameter Value Unit

R

Figure 1. Maximum power dissipation versus

18

16

14

12

10

Figure 3. Relative variation of thermal

1.E+00

Junction to case (AC) (360° conduction angle) 3.1 °C/W

th(j-c)

Junction to ambient 60 °C/W

th(j-a)

Figure 2. On-state rms current versus case

on-state rms current

P(W)

α=180°

8

6

4

2

0

0 2 4 6 8 10121416

I (A)

T(RMS)

180°

α

I (A)

T(RMS)

18

16

14

12

10

8

6

4

2

0

0 25 50 75 100 125

temperature

T (°C)

C

Figure 4. On-state characteristics

1.E-01

impedance versus pulse duration

K=[Z /R

th th

]

Z

th(j-c)

Z

th(j-a)

100

I (A)

(maximum values)

TM

T max.

j

V = 0.85V

t0

Ω

R = 20 m

d

T=jT max.

j

α=180°

1.E-02

t (s)

1.E-03

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

p

10

T = 25°C

j

V (V)

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0

TM

Doc ID 3759 Rev 1 3/8