ST T1620T-8I, T1635T-8I User Manual
T1620T-8I, T1635T-8I
Snubberless™ 16 A Triac
Datasheet − production data
Features
■ High static and dynamic commutation
■ Three quadrants
■ Snubberless device
■ Package is RoHS (2002/95/EC) compliant
■ Tab insulated, voltage = 2500 V rms
■ UL certified (ref. file E81734)
Applications
■ General purpose AC line load switching
■ Home appliances:
–Fan
–Pump
– Solenoid
■ Lighting
■ Heaters
■ Inrush current limiting circuits
■ Overvoltage crowbar protection circuits
A2
G
A1
A1
A2
G
TO-220AB insulated
(T1620T-8l
T1635T-8l)
Table 1. Device summary
Order code Quadrants Value I
T1620T-8I I - II - III 20
T1635T-8I I - II - III 35
GT
(mA)
Description
Available in TO220AB-Ins. (ceramic insulated),
the T1620T-8I, and T1635T-8I Triacs can be used
as on/off or phase angle function controllers in
general purpose AC switching.
These devices can be used without snubber (R +
C networks) if the datasheet limits are respected.
Provides insulation rated at 2500 V rms (TO220AB insulated package).
TM: Snubberless is a trademark of STMicroelectronics
April 2012 Doc ID 022134 Rev 2 1/10
This is information on a product in full production.
www.st.com
10
Characteristics T1620T-8I, T1635T-8I
1 Characteristics
Table 2. Absolute maximum rating (Tj = 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
T
= 108 °C 16
I
T(RMS)
I
V
V
V
V
dI/dt Critical rate of rise of on-state current I
P
T
V
(rms)
On-state rms current (full sine wave)
Non repetitive surge peak on-state current (full
TSM
cycle, Tj initial = 25 °C)
²
I
tI²t Value for fusing tp = 10 ms 95 A²s
/
DRM
Repetitive peak off-state voltage, gate open
RRM
,
DSM
Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25 °C 900 V
RSM
= 2 x IGT F = 100 Hz 100 A/µs
G
Peak gate current tp = 20 µs Tj = 150 °C 4 A
I
GM
Average gate power dissipation Tj = 150 °C 1 W
G(AV)
Storage junction temperature range
stg
T
Operating junction temperature range
j
Lead temperature for soldering during 10 s
T
L
(at 4 mm from case for TO220AB-ins.)
ins
Insulation rms voltage, 1 minute, TO220AB ceramic insulated 2500 V
F = 50 Hz t
F = 60 Hz t
c
= 119 °C 12
T
c
= 20 ms 120
p
= 16.7 ms 126
p
T
= 150 °C 600
j
= 125 °C 800
T
j
-40 to +150
-40 to +150
260 °C
A
A
V
°C
2/10 Doc ID 022134 Rev 2
T1620T-8I, T1635T-8I Characteristics
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant
T1620T T1635T
IGT
(1)
VD = 12 V, RL = 30 Ω
I - II - III MIN. 1 1.75 mA
I - II - III MAX. 20 35 mA
V
V
I
H
VD = 12 V, RL = 30 Ω All MAX. 1.3 V
GT
VD = 800 V, RL = 3.3 kΩ, Tj = 125 °C All MIN. 0.2 V
GD
(1)
IT = 500 mA MAX. 25 45 mA
I - III
I
IG = 1.2 I
L
VD = 67% x 800 V gate open Tj = 125 °C
(1)
dV/dt
V
(1)
(dl/dt)c
t
GT
1. For both polarities of A2 referenced to A1
(dV/dt)c = snubberless (> 20 V/µs)
gate controlled turn on time ITM = 13 A, VD = 400 V,
I
G
GT
= 67% x 600 V gate open Tj = 150 °C 500 1000
D
= 100 mA, dIG/dt = 100 mA/µs, RL = 30 Ω
Tj = 125 °C
= 150 °C 4.5 12
T
j
I - II - III TYP. 2 µs
MAX.
II 40 65
MIN.
MIN.
Value
Unit
35 55
mA
1000 2000
V/µs
616
A/ms
Table 4. Static characteristics
Symbol Test conditions Value Unit
(1)
V
TM
V
R
I
DRM
I
RRM
1. for both polarities of A2 referenced to A1
Table 5. Thermal resistance
ITM = 22.6 A, tp = 380 µs Tj = 25 °C MAX. 1.55 V
(1)
Threshold voltage Tj = 150 °C MAX. 0.85 V
to
(1)
Dynamic resistance Tj = 150 °C MAX. 30 mΩ
d
T
= 25 °C
V
V
DRM
DRM
= V
= V
= 800 V
RRM
= 600 V Tj = 150 °C 3.6
RRM
j
= 125 °C 1
T
j
MAX.
5µA
Symbol Parameter Value Unit
R
R
Junction to case (AC) 2.1 °C/W
th(j-c)
Junction to ambient 60 °C/W
th(j-a)
mA
Doc ID 022134 Rev 2 3/10
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