ST T1010H User Manual
High temperature 10 A sensitive TRIACs
Features
■ Medium current TRIAC
■ Logic level sensitive TRIAC
■ 150 °C max. T
■ Clip bounding
■ RoHS (2002/95/EC) compliant packages
Applications
■ The T1010H is designed for the control of AC
actuators in appliances and industrial systems.
■ The multi-port drive of the microcontroller can
control the multiple loads of such appliances
and systems through these sensitive gate
TRIACs.
turn-off commutation
j
A2
A1
D2PAK
T1010H-6G
T1010H
A2
G
A1
A2
G
A2
TO-220AB
T1010H-6T
G
A2
A1
Description
Specifically designed to operate at 150 °C, the
new 10 A T1010H TRIACs provide an enhanced
performance in terms of power loss and thermal
dissipation. This allows the optimization of the
heatsink size, leading to space and cost
effectiveness when compared to electromechanical solutions.
Based on ST logic level technology, they offer an
I
lower than 10 mA and specified minimal
GT
commutation and high noise immunity levels valid
up to the T
max.
j
Table 1. Device summary
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT MAX
10 A
600 V
10 mA
May 2009 Doc ID 15715 Rev 1 1/10
www.st.com
10
Characteristics T1010H
1 Characteristics
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
²
tI
I
dI/dt
V
DSM/VRSM
I
GM
P
G(AV)
T
stg
T
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
On-state rms current (full sine wave) D2PAK, TO-220AB Tc = 135 °C 10 A
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25 °C)
²
t Value for fusing tp = 10 ms 66 A²s
Critical rate of rise of on-state current
I
= 2 x IGT , tr ≤ 100 ns
G
Non repetitive surge peak off-state
voltage
F = 60 Hz t = 16.7 ms 105
F = 50 Hz t = 20 ms 100
F = 120 Hz T
= 10 ms Tj = 25 °C
t
p
= 150 °C 50 A/µs
j
V
DRM/VRRM
Peak gate current tp = 20 µs Tj = 150 °C 4 A
Average gate power dissipation Tj = 150 °C 1 W
Storage junction temperature range
Operating junction temperature range
j
- 40 to + 150
- 40 to + 150
+ 100
Symbol Test conditions Quadrant Min. Max. Unit
I
GT
V
GT
V
GD
(1)
I
H
VD = 12 V RL = 33 Ω
VD = V
, RL = 3.3 kΩ I - II - III 0.15 V
DRM
IT = 100 mA 25 mA
I - II - III 1 10 mA
I - II - III 1.0 V
I - III 30
I
L
dV/dt
(dI/dt)c
1. For both polarities of A2 referenced to A1.
IG = 1.2 I
(1)
VD = 67% V
Logic level, 0.1 V/µs, Tj = 150 °C 14.4
(1)
Logic level, 15 V/µs, T
GT
II 35
gate open, Tj = 150 °C 75 V/µs
DRM,
= 150 °C 3.8
j
A
V
°C
mA
A/ms
2/10 Doc ID 15715 Rev 1
T1010H Characteristics
Table 4. Static characteristics
Symbol Test conditions Value Unit
(1)
V
T
V
t0
R
d
ITM = 14.1 A, tp = 380 µs Tj = 25 °C MAX. 1.5 V
(1)
Threshold voltage Tj = 150 °C MAX. 0.80 V
(1)
Dynamic resistance Tj = 150 °C MAX. 41.0 mΩ
Tj = 25 °C MAX. 5 µA
V
= V
I
DRM
I
RRM
V
DRM
D/VR
D/VR
RRM
= 150 °C MAX. 3.6
T
j
= 400 V (at peak mains voltage) Tj = 150 °C MAX. 3.0
= 200 V (at peak mains voltage) Tj = 150 °C MAX. 2.5
1. for both polarities of A2 referenced to A1.
Table 5. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
R
th(j-a)
Figure 1. Maximum power dissipation versus
P(W)
12
11
10
9
8
7
6
5
4
3
2
1
0
012345678910
Junction to case (AC) D2PAK / TO-220AB 1.50
S = 1 cm
2
D2PA K 4 5
Junction to ambient
TO-220AB 60
Figure 2. On-state rms current versus case
on-state rms current (full cycle)
I
(A)
T(RMS)
I
T(RMS)
12
11
10
9
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125 150
temperature (full cycle)
(A)
TC(°C)
mAV
°C/W
Doc ID 15715 Rev 1 3/10
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