ST STZ150NF55T User Manual
STZ150NF55T
N-CHANNEL TEMPERATURE SENSING 55V - P²PAK
SAFeFET™ MOSFET
DATA BRIEF
General features
Type
STZ150NF55T 55 V <9 mΩ 40 A(1)
■ INTEGRATED ESD PROTECTION
■ INTEGRATED TEMPERAT UR E SENSIN G
■ STANDARD VGS(th) LEVEL
■ 175°C JUNCTION TEMPERATURE
V
DSSS
R
DS(on)
I
Applications
Package
D
5
1
P²PAK
Internal schematic diagram
■ HIGH CURRENT SWITCHING
Order codes
Sales Type Marking Package Packa ging
STZ150NF55T Z150NF55T P²PAK TAPE & REEL
Rev 1
July 2005 1/7
www.st.com
7
1 Absolute maximum ratings STZ150NF55T
1 Absolute maximum ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
V
GS
ID Note 1 Drain Current (conti nuous) at TC = 25°C
I
Note 1 Drain Current (conti nuous) at TC = 100°C
D
I
DM
P
TOT
Drain-Source Voltage (VGS = 0)
55 V
Gate-Source Voltage ± 18 V
40 A
40 A
Drain Current (pulsed ) 160 A
Total Dissipation at TC = 25°C
250 W
Derating Factor 1.67 W/°C
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) >4 kV
E
AS
T
T
stg
Single Pulse Avalanche Energy TBD mJ
Operating Junction Temperature
j
Storage Temperature
-55 to 175 °C
2/7
STZ150NF55T 2 Electrical characteristics
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 2. On/Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
V
F
(1) Limited by wire bonding
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current (V
Gate Body Leakage Current
= 0)
(V
DS
Gate Threshold Voltage
St ati c Drai n-Source On
Resistance
Temperature Sense diode
forward voltage
GS
= 0)
I
= 250µA, VGS= 0
D
= Max Ra ting,
V
DS
= ±15V, V
V
GS
V
= VGS, ID = 250 µA
DS
V
= 10 V, ID= 20 A
GS
I
=250µA
f
DS
= 0
55 V
10 µA
10 µA
24V
9mΩ
3.5 V
3/7
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