ST STP9NK90Z, STF9NK90Z, STW9NK90Z User Manual
查询STF9NK90供应商
N-CHANNEL 900V - 1.1Ω - 8A TO-220/TO-220FP/TO-247
STP9NK90Z - STF9NK90Z
STW9NK90Z
Zener-Protected SuperMESH™Power MOSFET
TYPE V
STP9NK90Z
STF9NK90Z
STW9NK90Z
■ TYPICAL R
■ EXTREMELY HIGHdv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSICCAPACITANCES
■ VERY GOOD MANUFACTURING
900 V
900 V
900 V
(on) = 1.1 Ω
DS
DSS
R
DS(on)
< 1.3 Ω
< 1.3 Ω
< 1.3 Ω
I
D
8A
8A
8A
Pw
160 W
40 W
160 W
REPEATIBILITY
DESCRIPTION
The SuperMESH™ s eries is obtained through an
extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis taken to ensure a very good dv/dt capability for the
most dem anding applications. Such series complements S T full range of high voltage MOSFETs including revolutionary MDmes h™ products.
TO-220
1
3
2
TO-220FP
TO-247
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES
■ DC-AC CONVERTERS FOR WELDING, UPS
AND MO TOR DRIVE
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP9NK90Z P9NK90Z TO-220 TUBE
STF9NK90Z F9NK90Z TO-220FP TUBE
STW9NK90Z W9NK90Z TO-247 TUBE
1/11April 2003
STP9NK90Z - STF9NK90Z - STW9NK90Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP9NK90Z STF9NK90Z STW9NK90Z
V
DS
V
DGR
V
GS
I
D
I
D
IDM()
P
TOT
V
ESD(G-S)
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
(1) I
≤8A, di/dt ≤200A/µs, VDD≤ V
SD
(*) Limited only by maximum temperature allowed
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
900 V
900 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
8 8 (*) 8 A
5 5 (*) 5 A
Drain Current (pulsed) 32 32 (*) 32 A
Total Dissipation at TC= 25°C
160 40 160 W
Derating Factor 1.28 0.32 1.28 W/°C
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4KV
Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
-55to150
-55to150
°C
°C
THERMAL DATA
TO-220 TO-220FP TO-247
Rthj-case Thermal Resistance Junction-case Max 0.78 3.1 0.78 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
E
AS
Single Pulse Avalanche Energy
(starting T
max)
j
= 25 °C, ID=IAR,VDD=50V)
j
8A
300 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed t o enhance not only the device’s
ESD capability, but also to make them saf ely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’ s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/11
STP9NK90Z - S TF9NK9 0Z - STW9NK90Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=1mA,VGS= 0 900 V
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
= 100µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 3.6 A 1.1 1.3 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID= 3.6 A 5.75 S
g
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
=25V,f=1MHz,VGS= 0 2115
V
DS
190
40
VGS=0V,VDS= 0V to 720V 115 pF
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=450V,ID=4A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)
=720V,ID=8A,
V
DD
V
=10V
GS
22
13
72
14
38
100
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD= 450 V, ID=4A
R
=4.7ΩVGS=10V
G
55
28
(Resistive Load see, Figure 3)
t
r(Voff)
t
f
t
c
Fall Time
Cross-over Time
Off-voltage Rise Time
= 720V, ID=8A,
V
DD
RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)
53
11
22
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD= 8 A, VGS=0
I
SD
VDD=50V,Tj= 150°C
(see test circuit, Figure 5)
= 8 A, di/dt = 100A/µs
950
10
21
when VDSincreases from 0 to 80%
oss
8
32
1.6 V
ns
ns
ns
ns
ns
A
A
ns
µC
A
3/11
STP9NK90Z - STF9NK90Z - STW9NK90Z
Safe Operating F or TO-220
Thermal Impedance For TO-220
Thermal Impedance For TO-220FPSafe Operating Area For TO-220FP
Safe Operating Area For TO-247
4/11
Thermal Impedance For TO-247
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