automatic center frequency calibration:
– LOA: 1650 to 1950 MHz
– LOB: 2050 to 2370 MHz
■ Embedded integer-N synthesizer
– Dual modulus programmable prescaler
(16/17 or 19/20)
– Programmable reference frequency divider
(10 bits)
– Adjustable charge pump current
– Digital lock detector
– Excellent integrated phase noise
– Fast lock time: 150 µs
■ Integrated DAC with dual current output
■ Supply: 3.3 V and 5 V analog,
3.3 V Digital
■ Dual digital bus interface: SPI and I
mode) with 3 bit programmable address
(1101A
■ Process: 0.35 µm BICMOS SiGe
■ Operating temperature range -40 to +85
■ 44-lead exposed pad VFQFPN
2A1A0
)
package7x7x1.0 mm
2
C bus (fast
o
C
STW82100B
Datasheet − production data
VFQFPN-44
Applications
■ Cellular infrastructure equipment:
– IF sampling receivers
– Digital PA linearization loops
■ Other wireless communication systems.
Table 1.Device summary
Part numberPackagePackaging
STW82100BVFQFPN-44Tray
STW82100BTRVFQFPN-44Tape and reel
Description
The STMicroelectronics STW82100B is an
integrated down converter providing 8 dB of gain,
10.5 dB NF, and a very high input linearity by
means of its passive mixer.
Embedding two wide band auto calibrating VCOs
and an integer-N synthesizer, the STW82100B is
suitable for both Rx and Tx requirements for
Cellular infrastructure equipment.
The integrated RF balun and internal matching
permit direct 50 ohm single-ended interface to RF
port. The IF output is suitable for driving 200-ohm
impedance filters.
By embedding a DAC with dual current output to
drive an external PIN diode attenuator, the
STW82100B replaces several costly discrete
components and offers a significant footprint
reduction.
The STW82100B device is designed with
STMicroelectronics advanced 0.35 µm
SiGe process. Its performance is specified over a
-40 °C to +85 °C temperature range.
May 2012Doc ID 018355 Rev 51/67
This is information on a product in full production.
3VDD_DIVDivider by 2 power supplyVsupply analog1= 3.3 V
4VDD_VCOVCOs and External VCO Buffer power supplyVsupply analog1= 3.3 V
Diversity Slave Mode and External
5EXTVCO_INNExternal VCO (LO) negative input
6EXTVCO_INPExternal VCO (LO) positive input
7EXT_PD
8ADD2I
9ADD1I
10ADD0I
Hardware power down:
‘0’ device ON; ‘1’ device OFF
2
CBUS address select pinCMOS Input
2
CBUS address select pinCMOS Input
2
CBUS address select pinCMOS Input
11VDD_IODigital IO power supplyVsupply digital = 3.3 V
12VDD_PSCBUFPrescaler input buffer power supplyVsupply analog1= 3.3 V
13NCNot connected-
VCO Modes; otherwise it must be
connected to GND
Diversity Slave Mode and External
VCO Modes; otherwise it must be
connected to GND
CMOS Input
14NCNot connected-
15VDD_OUTBUFPower supply for LO bufferVsupply analog1=3.3 V
16OUTBUFNLO Output buffer negative outputOpen collector @3.3 V
17OUTBUFPLO Output buffer positive outputOpen collector @ 3.3 V
18VCTRLControl voltage for VCOs-
19ICPPLL charge pump output-
20REXT_CP
External resistance connection for PLL charge
pump current
-
21VDD_CPPower supply for charge pumpVsupply analog1= 3.3 V
22LOCK_DETLock detectorCMOS Output
23REF_CLKReference frequency input-
24VDD_PLLPLL digital power supplyVsupply analog1= 3.3 V
25DBUS_SELDigital Bus Interface selectCMOS Input
26VDD_DIGPower supply for digital bus interfaceVsupply digital = 3.3 V
2
27SDA/DATAI
28SCL/CLKI
CBUS /SPI data lineCMOS Bidir Schmitt triggered
2
CBUS /SPI clock lineCMOS Input Schmitt triggered
29LOADSPI load lineCMOS Input Schmitt triggered
30NCNot connected-
31IF_OUTNIF amplifier negative outputOpen collector @ 5 V
(1)
Doc ID 018355 Rev 59/67
Pin descriptionSTW82100B
Table 2.Pin list (continued)
Pin NoNameDescriptionObservation
32IF_OUTPIF Amplifier positive outputOpen collector @ 5 V
33VDD_IFAMPIF Amplifier power supplyVsupply analog1 = 3.3 V
34TEST2Test input 2
35TEST1Test input 1
Test purpose only; it must be
connected to GND
Test purpose only; it must be
connected to GND
(1)
36TEST_ALCTest output
Test purpose only; it must be
connected to GND
37RF_CTRF balun central tap-
38RF_INRF input -
39VDD_RFESDRF ESD positive rail power supplyVsupply analog1 = 3.3 V
40MIXDRV_CTMixer driver balun central tapVsupply analog2 = 5 V
41VDD_ALCALC power supplyVsupply analog1 = 3.3 V
42VDD_MIXDRVMixer driver power supplyVsupply analog1 = 3.3 V
43I_PINDRV1
44I_PINDRV2
1. Supply voltage @ 3.3 V in low-current mode operation
DAC current output for external PIN Diode
attenuator
DAC current output for external PIN Diode
attenuator
PMOS Open drain
PMOS Open drain
(1)
10/67Doc ID 018355 Rev 5
STW82100BAbsolute maximum ratings
3 Absolute maximum ratings
Table 3.Absolute maximum ratings
SymbolParameterValuesUnit
AVCC1Analog Supply voltage0 to 4.6V
AVCC2Analog Supply voltage0 to 6V
DVCC Digital Supply voltage0 to 4.6V
TstgStorage temperature+150°C
HBM on pins 16, 17, 31, 32, 37, 400.8
HBM on pin 381
ESD
(Electro-static discharge)
HBM on all remaining pins2
kV
CDM-JEDEC Standard on pin 380.25
CDM-JEDEC Standard on all remaining pins0.5
MM0.2
Doc ID 018355 Rev 511/67
Operating conditionsSTW82100B
4 Operating conditions
Table 4.Operating conditions
SymbolParameterTest conditionsMinTypMaxUnit
AVCC1Analog Supply voltage-3.153.33.45V
AVCC2Analog Supply voltage-4.7555.25V
DVCC Digital Supply voltage-3.153.33.45V
Standard mode-130150mA
External VCO standard mode-110130mA
I
CC3.3V
Current Consumption at 3.3 V
Diversity slave mode-105120mA
Diversity master mode-155180mA
External VCO diversity master
mode
-140160mA
High current mode at 5 V-170195mA
I
CC5V
T
A
T
J
Θ
JA
Θ
JB
Θ
JC
Ψ
JB
Current Consumption
Low current mode at 3.3 V-100115mA
Operating ambient temperature--4085°C
Maximum junction temperature--125°C
Junction to ambient package thermal
resistance
Junction to board package thermal
resistance
Junction to case package thermal
resistance
Thermal characterization parameter
junction to board
(1)
(1)
(1)
(1)
Multi-layer JEDEC board-33 -°C/W
Multi-layer JEDEC board-19 -°C/W
Multi-layer JEDEC board-3 -°C/W
Multi-layer JEDEC board-18-°C/W
Ψ
JT
1. Refer to JEDEC standard JESD 51-12 for a detailed description of the thermal resistances and thermal parameters.
Data here presented are referring to a Multi-layer board according to JEDEC standard.
T
= TA + ΘJA * Pdiss (in order to estimate TJ if ambient temperature TA and dissipated power Pdiss are known)
J
T
= TB + ΨJB * Pdiss (in order to estimate TJ if board temperature TB and dissipated power Pdiss are known)
J
T
= TT + ΨJT * Pdiss (in order to estimate TJ if top case temperature TT and dissipated power Pdiss are known)
J
Thermal characterization parameter
junction to top case
(1)
Multi-layer JEDEC board-0.3-°C/W
12/67Doc ID 018355 Rev 5
STW82100BOperating conditions
Table 5.Digital logic levels
T
SymbolParameterTest conditionsMinTypMaxUnit
VilLow level input voltage---0.2*Vdd V
VihHigh level input voltage-0.8*Vdd--V
VhystSchmitt trigger hysteresis-0.8--V
VolLow level output voltage---0.4V
VohHigh level output voltage-0.85*Vdd--V
Doc ID 018355 Rev 513/67
Test conditionsSTW82100B
5 Test conditions
Unless otherwise specified the following test conditions are applied:
●Vsupply digital = 3.3 V
●Vsupply analog1 = 3.3 V
●Vsupply analog2 = 5 V
●F
●MIX = 0111
●T ambient = 27 ° C
Refer also to Section 11: Application information.
= 1950 MHz, TA = +25 *C, RF power = 0 dBm, unless otherwise specified.
LO
Table 6.Down converter mixer and IF amplifier electrical characteristics
)
SymbolParameterConditionsMinTypMaxUnit
F
RF
F
LO
F
IF
CGPower Conversion Gain
CG
ΔT
RF Frequency-1620-2400 MHz
VCOA divided by 21650-1950 MHz
LO Frequency
VCOB divided by 22050-2370 MHz
IF Center Frequency
(2)
FIF = ABS(FLO-FRF)70-400MHz
Rin = 50 ohm, Rout = 200 ohm
RFin = 0 dBm
Power Conversion Gain over
Temperature
(3)
T= -40 to +85 °C-±0.7-dB
(1)
7.588.5dB
IP
1dB
IIP3
IIP3
ΔT
nFRF-nFLOSpurious rejection at IF
Input P1dB
Third-order input intercept
(4)
point
IIP3 variation over
temperature
(3)
(3)
Low current Mode-8-
High current Mode24.525.5-
Low current Mode18.519.5-
T= -40 to +85 °C-±0.5-dB
2F
-2FLO F
RF
F
= 150 MHz
IF
-3FLO F
3F
RF
= 150 MHz
F
IF
RFin
RFin
= -5 dBm,
= -5 dBm,
-77-dBc
-77-dBc
dBm
dBm
High-current mode, MIX = 0011-10.511dB
High current Mode-13.5-
NF
SSB
Noise figure
Low-current mode, MIX = 0011-10.511dB
1xLO--35-dBm
-LO to IF Leakage
2xLO-33
-LO to RF Leakage---29-dBm
-RF to IF Isolation--58-dB
RF
IF
RL
RL
RF Return LossMatched to 50 ohm-20-dB
IF Return LossMatched to 200 ohm-25-dB
Maximum deviation from Fc over ±10
MHz. For any Fc within each TX
-
observation path
(5)
Gain Flatness for TX
observation path band.
Maximum deviation from F
over ±30
c
MHz. For any Fc within each TX
-0.05-+0.05 dB
-0.10-+0.10 dB
observation path band.
Doc ID 018355 Rev 515/67
Electrical characteristicsSTW82100B
Table 6.Down converter mixer and IF amplifier electrical characteristics
(1)
(continued)
SymbolParameterConditionsMinTypMaxUnit
Maximum deviation from linear phase
-
Phase Flatness for TX
observation path
(5)
-Gain Flatness for RX path
-Phase Flatness for RX path
Mixer Driver Current
Consumption
ICC
MD
Mixer Driver Current
Consumption (Low Current
Mode)
IFAMP Current Consumption
ICC
IFAM
IFAMP Current Consumption
(Low Current Mode)
at Fc over ±10 MHz. For any Fc within
each TX observation path band.
Maximum deviation from linear phase
at F
over ±30 MHz. For any Fc within
c
each TX observation path band.
Maximum ripple over a 4 MHz band.
(5)
For any F
Maximum ripple over a 4 MHz band.
(5)
For any F
within each RX path band.
c
within each RX path band.
c
3.3 V Supply (pin 41, 42)-49-mA
5 V Supply (pin 40)-60-mA
3.3 V Supply (pin 41, 42)-20-mA
3.3 V Supply (pin 40)-35-mA
3.3 V Supply (pin 33)-10-mA
5 V Supply (pin 31, 32)-108-mA
3.3 V Supply (pin 33)-6-mA
3.3 V Supply (pin 31, 32)-55-mA
-0.3-+0.3 deg
-0.7-+0.7 deg
--0.1
--0.6
dB
pk-pk
deg
pk-pk
1. All linearity and NF performances are intended at maximum LO amplitude (LO_A[1:0]=[11]), tuning capacitors (CAP[2:0])
programmed according to the selected frequency, mixer bias (MIX[3:0]) set to maximize performance and the device
operated in high current mode. The performances of conversion gain, NF and linearity are intended at the SMA connectors
of a typical application board.
2. The IF frequency range supported by the IF Amplifier is from 70 to 400 MHz. The exact IF frequency range supported for a
specific RF frequency can be calculated as F
1. The frequency step is related to the PFD input frequency as follows: F
2. See relationship between ICP and R
3. The level of spurs may change depending on PFD frequency, Charge Pump current, selected channel and PLL loop BW.
4. When setting a specified output frequency, the VCO calibration procedure must be run first in order to select the best
subrange for the VCO covering the desired frequency. Once programmed at the initial temperature T
temperature range (-40 oC to +85 oC), the synthesizer is able to maintain the lock status if the temperature drift (in either
direction) is within the limit specified by ΔT
range.
5. Frequency jump form 1950 to 1800 MHz; it includes the time required by the VCO calibration procedure (7 x F
=17.5 µs with F
=400 kHz))
PFD
in the Circuit Description section (Charge Pump)
EXT_CP
LKA or ΔTLKB
, provided that the final temperature T1 is still inside the nominal
STEP=FPFD
/2)
inside the operating
0
cycles
PFD
18/67Doc ID 018355 Rev 5
STW82100BElectrical characteristics
Table 9.Phase noise performance
(1)
ParametersConditionsMin.Typ.Max.Unit
In band phase noise floor, closed loop
Normalized In Band Phase Noise
Floor (LO)
In Band Phase Noise Floor (LO)-230+20log(N)+10log(F
(2)
I
=4 mA, PLL BW = 50 kHz
CP
(including reference clock
contribution)
--230-
) dBc/Hz
PFD
dBc/Hz
PLL integrated phase noise
Integrated Phase Noise
(single sided)
100 Hz to 40 MHz
=2.200 GHz, F
F
LO
STEP
=200 kHz,
ICP=3 mA, PLL BW = 25 kHz
--45-dBc
-0.48-° rms
LOA (1650 MHz to 1950 MHz) – open loop
Phase Noise @ 1 kHz---69-dBc/Hz
Phase Noise @ 10 kHz---95-dBc/Hz
Phase Noise @ 100 kHz---118-dBc/Hz
Phase Noise @ 1 MHz---139-dBc/Hz
Phase Noise @ 10 MHz---152-dBc/Hz
Phase Noise Floor @ 40 MHz---154-dBc/Hz
LOB (2050 MHz to 2370 MHz) – open loop
Phase Noise @ 1 kHz---62-dBc/Hz
Phase Noise @ 10 kHz---88-dBc/Hz
Phase Noise @ 100 kHz---112-dBc/Hz
Phase Noise @ 1 MHz---134-dBc/Hz
Phase Noise @ 10 MHz---150-dBc/Hz
Phase Noise Floor @ 40 MHz---153-dBc/Hz
1. Phase Noise SSB. VCO amplitude set to maximum value [11]. All the closed-loop performances are specified using a
Reference Clock signal at 76.8 MHz with phase noise of -144 dBc/Hz @1 kHz offset, -157 dBc/Hz @10 kHz offset and
-168 dBc/Hz of noise floor.
2. Normalized PN = Measured LO PN – 20log(N) – 10log(F
comparison frequency at the PFD input
) where N is the VCO divider ratio (N=B*P+A) and F
PFD
PFD
is the
Doc ID 018355 Rev 519/67
Typical performance characteristicsSTW82100B
7 Typical performance characteristics
Note:Vsupply digital = 3.3 V, Vsupply analog1 = 3.3 V, Vsupply analog2 = 5 V, F
T
= +25 °C, RF power = 0 dBm, unless otherwise specified.
A
Figure 3.Conversion gain against RF frequency
Conversion gain (dB)
RF frequency (MHz)
= 150 MHz,
IF
Figure 4.Noise figure against RF frequency
Noise figure (dB)
RF frequency (MHz)
20/67Doc ID 018355 Rev 5
STW82100BTypical performance characteristics
Figure 5.IIP3 against RF frequency
IIP3 (dBm)
RF frequency (MHz)
Figure 6.2RF-2LO response against RF frequency
2RF-2LO response (dB)
RF frequency (MHz)
Doc ID 018355 Rev 521/67
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