ST STW80NE06-10 User Manual

STW80NE06-10

			STW80NE06-10
		N - CHANNEL 60V - 0.0085Ω - 80A - TO-247
			STripFET º POWER MOSFET
TYPE	VDSS	RDS(on)	ID
STW80NE06-10	60 V	<0.01 Ω	80 A

■TYPICAL RDS(on) = 0.0085 Ω

■EXCEPTIONAL dv/dt CAPABILITY

■100% AVALANCHE TESTED

■APPLICATION ORIENTED CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics	unique ºSingle	Feature
Size º strip-based	process. The	resulting

transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

■SOLENOID AND RELAY DRIVERS

■MOTOR CONTROL, AUDIO AMPLIFIERS

■DC-DC CONVERTERS

■AUTOMOTIVE ENVIRONMENT

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Uni t
VDS	Drain-source Voltage (VGS = 0)	60	V
VDGR	Draingate Voltage (RGS = 20 kΩ)	60	V
VGS	Gate-source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25 o C	80	A
ID	Drain Current (continuous) at Tc = 100 oC	57	A
IDM(•)	Drain Current (pulsed)	320	A
Pt ot	Total Dissipation at Tc = 25 oC	200	W
	Derating Factor	1.33	W/oC
dv/dt	Peak Diode Recovery voltage slope	7	V/ns
Tstg	Storage Temperature	-65 to 175	oC
Tj	Max. Operating Junction Temperature	175	oC
(•) Pulse width limited by safe operating area		(1) ISD ≤ 80 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

July 1998

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STW80NE06-10

THERMAL DATA

Rt hj-ca se	Thermal Resistance Junction-case			Max	0.75	oC/W
Rthj -amb	Thermal	Resistance	Junction-ambient	Max	30	oC/W
Rthcsi nk	Thermal	Resistance	Case-sink	Typ	0.1	oC/W
Tl	Maximum Lead Temperature For Soldering Purpose				300	oC

AVALANCHE CHARACTERISTICS

Symb ol	Parameter	Max Valu e	Uni t
IAR	Avalanche Current, Repetitive or Not-Repetitive	80	A
	(pulse width limited by Tj max)
EAS	Single Pulse Avalanche Energy	350	mJ
	(starting Tj = 25 oC, ID = IAR , VDD = 30 V)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF

Symb ol	Parameter	Test Cond ition s		Mi n.	Typ . Max.	Un it
V(BR)DSS	Drain-source	ID = 250 μA VGS = 0		60		V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating	Tc = 125 oC		1	μA
	Drain Current (VGS = 0)	VDS = Max Rating			10	μA
IGSS	Gate-body Leakage	VGS = ± 20 V			± 100	nA
	Current (VDS = 0)

ON ( )

Symb ol	Parameter	Test Cond ition s		Mi n.	Typ .	Max.	Un it
VGS(th)	Gate Threshold	VDS = VGS	ID = 250 μA	2	3	4	V
	Voltage
RDS( on)	Static Drain-source On	VGS = 10V	ID = 40 A		8.5	10	mΩ
	Resistance
ID(o n)	On State Drain Current	VDS > ID(on) x RDS(on) max		80			A
		VGS = 10 V

DYNAMIC

Symb ol	Parameter	Test Cond ition s		Mi n.	Typ .	Max.	Un it
gfs ( ) Forward		VDS > ID(on) x RDS(on) max	ID =40 A	19	38		S
	Transconductance
Ciss	Input Capacitance	VDS = 25 V f = 1 MHz	VGS = 0		7600	10000	pF
Coss	Output Capacitance				890	1100	pF
Crss	Reverse Transfer				150	200	pF
	Capacitance

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STW80NE06-10

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symb ol	Parameter
td(on)	Turn-on Time
tr	Rise Time
Qg	Total Gate Charge
Qgs	Gate-Source Charge
Qgd	Gate-Drain Charge

Test Cond ition s		Mi n. Typ . Max.		Un it
VDD = 30 V	ID = 40 A	50	65	ns
RG =4.7 Ω	VGS = 10 V	150	200	ns
(see test circuit, figure 3)
VDD = 48 V	ID = 80 A VGS = 10 V	140		nC
		20		nC
		50		nC

SWITCHING OFF

Symb ol Parameter

tr(Vof f) Off-voltage Rise Time tf Fall Time

tc Cross-over Time

Test Cond ition s		Mi n. Typ . Max. Un it
VDD = 48 V	ID = 40 A	45	60	ns
RG =4.7 Ω	VGS = 10 V	75	100	ns
(see test circuit, figure 5)		130	170	ns

SOURCE DRAIN DIODE

Symb ol	Parameter	Test Cond ition s	Mi n. Typ . Max.	Un it
ISD	Source-drain Current		80	A
ISDM (•)	Source-drain Current		320	A

(pulsed)

VSD ( )	Forward On Voltage
trr	Reverse Recovery
	Time
Qrr	Reverse Recovery
	Charge
IRRM	Reverse Recovery
	Current

ISD = 80 A	VGS = 0		1.5	V
ISD = 80 A	di/dt = 100 A/μs	100		ns
VDD = 30 V	Tj = 150 oC			μC
(see test circuit, figure 5)		0.4
		8		A

( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % (•) Pulse width limited by safe operating area

Safe Operating Area

Thermal Impedance

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