ST STP22NM60, STF22NM60, STB22NM60, STB22NM60-1, STW22NM60 User Manual

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STP22NM60 - STF22NM60

STB22NM60 - STB22NM60-1 - STW22NM60

N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247

MDmesh™Power MOSFET

ADVANCED DATA

TYPE V

STP22NM60
STF22NM60
STB22NM60
STB22NM60-1
STW22NM60

■ TYPICAL R

■ HIGH dv/dt AND AVALANCHE CAPABILITIES

■ 100% AV ALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE CHARGE

■ LOW GATE INPUT RESISTANCE

DSS

600 V
600 V
600 V
600 V
600 V

(on) = 0.19Ω

DS

R

DS(on)Rds(on)*QgID

< 0.25 Ω
< 0.25 Ω
< 0.25 Ω
< 0.25 Ω
< 0.25 Ω

7.6 Ω*nC

7.6 Ω*nC

7.6 Ω*nC

7.6 Ω*nC

7.6 Ω*nC

22 A
22 A
22 A
22 A
22 A

DESCRIPTION

This improved version of MDmesh™ which is based
on Multiple Drain proc ess represents the new bench­mark in high voltage MOSFETs. The resulting product
exhibits ev en lower on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip technique
yields overall performances that are significantlybetter
than t hat of simi lar compet it ion’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing sys­tem miniaturization and higher efficiencies.

3

2

1

2

1

TO-220FP

3

TO-220

TO-247

3

2

1

2

PAK

I

I

NTERNAL SCHEMATIC DIAGRAM

D

2

PAK

3

2

1

3

1

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP22NM60 P22NM60 TO-220 TUBE
STF22NM60 F22NM60 TO-220FP TUBE
STB22NM60

STB22NM60-1

B22NM60T4 D

B22NM60-1 I

STW22NM60 W22NM60 TO-247 TUBE

June 2003

²PAK TAPE & REEL

²PAK TUBE

1/11

STP22NM60 / STF22NM60 / ST B 22NM6 0 / STB22NM60-1 - STW22NM60

ABSOLUTE M AXIMUM RA TINGS

Symbol Parameter Value Unit

STP22NM60

STB22NM60/1

Drain-source Voltage (VGS=0)

DS

Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ±30 V

GS

Drain Current (continuous) at TC= 25°C

D

Drain Current (continuous) at TC= 100°C

D

()

Drain Current (pulsed) 80 80(*) 80 A
Total Dissipation at TC= 25°C

22 22 (*) 22 A

12.6 12.6 (*) 12.6 A

192 45 210 W

I

V

DM

P

V

DGR

V

I
I

TOT

Derating Factor 1.2 0.36 1.2 W/°C

dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns

V

T

T

Insulation Winthstand Voltage (DC) -- 2500 -- V

ISO

Storage Temperature –65 to 150 °C

stg

Max. Operating Junction Temperature 150 °C

j

() Pulse width limited by safe operating area; (*)Limited only by maximum temperature allowed

≤22A, di/dt ≤400A/µs, VDD≤ V

(1) I

SD

(BR)DSS,Tj≤TJMAX.

STF22NM60 STW22NM60

600 V
600 V

THERMAL DATA

2

TO-220/D

PAK/I2PAK/TO-247

Rthj-case ThermalResistanceJunction-case Max 0.65 2.8 °C/W

Rthj-amb ThermalResistanceJunction-ambient Max 62.5 °C/W

T

Maximum Lead Temperature For Soldering

l

300 °C

Purpose

TO-220FP

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

=25°C,ID=IAR,VDD=50V)

j

max)

j

ELECTRICAL CHARACT ERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

11 A

650 mJ

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

Resistance

ID= 250 µA, VGS=0 600 V

V

= Max Rating

DS

= Max Rating, TC=125°C

V

DS

V

= ±30 V ±100 nA

GS

V

DS=VGS,ID

= 250 µA

34

1

10

5V

VGS=10V,ID= 11 A 0.19 0.25 Ω

µA
µA

2/11

STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60

ELECTRICAL CHARACT ERISTICS (CO NTINUE)

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS>I

g

fs

D(on)xRDS(on)max,

ID=11A

C

oss eq.

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(2) Equivalent Output

=25V,f=1MHz,VGS= 0 1590

V

DS

VGS=0V,VDS= 0V to 400V 130 pF

Capacitance

R

g

Gate Input Resistance f=1 MHz Gate DC Bias=0

Test Signal Level=20mV
Open Drain

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(*) C

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

when VDSincreases from 0 to 80% V

oss

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

Turn-on Delay Time

t

r

g
gs
gd

Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD=200V,ID=11A

= 4.7Ω VGS=10V

R

G

(see test circuit, Figure 3)
VDD=400V,ID=22A,

VGS=10V

TBD S

803

52

1.6 Ω

25
20

40

71
11
25

pF
pF
pF

ns
ns

nC
nC
nC

DSS

.

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

r(Voff)

t

t

Off-voltage Rise Time

f
c

Fall Time 15 ns
Cross-over Time 26 ns

= 480 V, ID=22A,

DD

RG=4.7Ω, VGS=10V
(see test circuit, Figure 5)

13 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

rrm

t

rr

Q

rr

I

rrm

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 20 A

(2)

Source-drain Current (pulsed) 80 A

(1)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

ISD=22A,VGS=0

= 22 A, di/dt = 100 A/µs,

I

SD

VDD=100V,Tj=25°C
(see test circuit, Figure 5)

= 22 A, di/dt = 100 A/µs,

I

SD

=100V,Tj=150°C

V

DD

(see test circuit, Figure 5)

416

5.6
27

544

7.3
28

1.5 V
ns

µC

A

ns

µC

A

3/11

STP22NM60 / STF22NM60 / ST B 22NM6 0 / STB22NM60-1 - STW22NM60

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

4/11