ST STP130NS04ZB, STB130NS04ZB, STW130NS04ZB User Manual

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N-CHANNEL CLAMPED - 7 m- 80A TO-220/D²PAK/TO-247
FULLY PROTECTED MESH OVERLAY™ MOSFET
STP130NS04ZB
STB130NS04ZB - STW130NS04ZB
Table 1: Ge neral Features
TYPE V
STP130NS04ZB STB130NS04ZB STW130NS04ZB
TYPICAL R
100% AVALANCHE TESTED
LOW CAPACITAN CE AND GATE CHARGE
175°C MAXIMUM JUNCTION TEMPERA TURE
DS
DSS
CLAMPED CLAMPED CLAMPED
R
DS(on)
< 9 m < 9 m < 9 m
I
D
80 A 80 A 80 A
DESCRIPTION
This fully clamped MO SFE T is produced by usi ng the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology cou­pled with the extra clamping capabilities make this product particularly suitable for the harshest oper­ation conditions such as those encountered in the automotive environment .Any other application re­quiring extra ruggedness is also recommended.
APPLICATIONS
HIGH SWITCHING CURRENT
LINEAR APPLICATIONS
Figure 1: Package
TO-220
3
2
1
1
TO-247
D²PAK
3
2
1
Figure 2: Internal Schematic Diagram
3
Table 2: Order Codes
Sales Type Marking Package Packaging
STP130NS04ZB P130NS04ZB TO-220 TUBE
STB130NS04ZBT4 B130NS04ZB D²PAK TAPE & REEL
STW130NS04ZB W130NS04ZB TO-247 TUBE
Rev. 2
1/12February 2005
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
V
DS
V
DG
V
GS
I
D
I
D
I
DG
I
GS
I
DM
P
TOT
V
ESD(G-S)
T
j
T
stg
() Pulse wi dt h l i m i ted by safe opera t in g area
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max 0.50 °C/W
Rthj-pcb (*) Thermal Resistance Junction-pcb Max -- 35 -- °C/W
Rthj-a Thermal Resistance Junction-ambient Max 62.5 -- 50
T
l
(*)Whe n m ounted on 1 inch ² FR4 2oZ Cu
Drain-source Voltage (VGS = 0)
CLAMPED V Drain-gate Voltage CLAMPED V Gate- source Voltage CLAMPED V Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C
80 A
60 A Drain Gate Current (continuous) ± 50 mA Gate Source Current (continuous) ± 50 mA
()
Drain Current (pulsed) 320 A Total Dissipation at TC = 25°C
300 W Derating Factor 2.0 W/°C Gate-Source ESD(HBM-C=100 pF, R=1.5 KΩ) 4KV Max Operating Junction Temperature
Storage Temperature
-55 to 175 °C
TO-220 D²PAK TO-247 Unit
Maximum Lead Temperature For Soldering
300 °C
Purpose (1.6 mm from case, for 10 sec)
Table 5: Avalanche Characteristics
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T
max)
j
Single Pulse Avalanche Energy (starting T
= 25 °C, ID = IAR, VDD = 30 V)
j
80 A
500 mJ
2/12
STP130NS04ZB - STB130NS04ZB - S TW130NS04ZB
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 6: On/Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Clamped Voltage ID = 1 mA, VGS = 0
33 V
-40 < Tj < 175 °C
I
I
V
DSS
GSS
GSS
Zero Gate Voltage Drain Current (V
GS
Gate-body Leaka ge Current (V
DS
= 0)
Gate-Source
= 0)
V
= 16 V,Tj = 25 °C
DS
V
= 16 V,Tj = 125 °C
DS
V
= ±10 V,Tj = 25 °C10µA
GS
10
100
IGS = ±100 µA 18 V
Breakdown Voltage
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage Static Drain-source On
= VGS = ID = 1 mA 2 4 V
DS
VGS = 10 V ,ID = 40 A 7 9
Resistance
Table 7: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Forward Transconductance VDS = 15 V, ID = 40 A 50 S
g
fs
C C C
t
d(on)
t
d(off)
Q Q Q
iss
oss
rss
t
f
t
f
gs
gd
g
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-on Delay Time Fall Time Turn-off Delay Time Fall Time
Total Gate Charge Gate-Source Charge Gate-Drain Charge
= 25 V, f = 1MHz, VGS = 0 2700
V
DS
= 17.5 V, ID = 40 A,
V
DD
RG = 4.7 Ω, V
GS
= 10 V
(see Figure 15)
VDD = 20 V, ID = 80 A, VGS = 10 V (see Figure 17)
1275
285
40 220 170 100
80
20
27
105 nC
m
pF pF pF
ns ns ns ns
nC nC
µA µA
Table 8: Source Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
(2)
SDM
(1)
V
SD
t
rr
Q
rr
I
RRM
(1) Pulsed: Pulse durat i on = 300 µs, duty cycle 1.5 %. (2) Pulse width limite d by safe operating area.
Source-drain Current Source-drain Current (pulsed)
Forward On Voltage Reverse Recovery Time
Reverse Recovery Charge Reverse Recovery Current
ISD = 80 A, VGS = 0
= 80 A, di/dt = 100A/µs
I
SD
V
= 25V, Tj = 150°C
DD
(see Figure 16)
90
0.18 4
80
320
1.5 V
A A
ns
µC
A
3/12
STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 5: Transconductance
4/12
Figure 8: Static Drain-source On Resistance
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