ST STTH8R04 User Manual

STTH8R04

Ultrafast recovery diode

Main product characteristics

I

F(AV)

V

RRM

T

j (max)

V

F (typ)

t

rr (typ)

8 A

400 V

175° C

0.9 V

25 ns

Features and benefits

■ Very low switching losses

■ High frequency and high pulsed current

operation

■ High junction temperature

■ Insulated packages

– TO-220AC Ins

Electrical insulation = 2500 V

RMS

Capacitance = 7 pF

– TO-220FPAC

Electrical insulation = 1500 V

RMS

Capacitance = 12 pF

Description

The STTH8R04 series uses ST's new 400 V planar Pt doping technology. The STTH8R04 is specially suited for switching mode base drive and transistor circuits.

Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection.

KA

K

A

K

TO-220AC

STTH8R04D

K

A

NC

2

PAK

D

STTH8R04G

TO-220FPAC

STTH8R04FP

TO-220AC Ins

STTH8R04DI

Order codes

Part Number Marking

STTH8R04D STTH8R04D

STTH8R04DI STTH8R04DI

STTH8R04FP STTH8R04FP

STTH8R04G STTH8R04G

STTH8R04G-TR STTH8R04G

A

K

A

K

March 2007 Rev 1 1/11

www.st.com

Characteristics STTH8R04

1 Characteristics

Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

I

F(AV)

I

FRM

I

FSM

T

Table 2. Thermal parameters

Repetitive peak reverse voltage 400 V

TO-220AC / D

2

PAK / TO220FPAC 30

RMS forward current

TO220AC Ins 20

TO-220AC / D

Average forward current, δ = 0.5

TO220AC Ins T

2

PA K Tc = 145° C

= 110° C

c

= 115° C

c

Repetitive peak forward current tp = 10 µs, F = 1 kHz 165 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 120 A

Storage temperature range -65 to +175 ° C

stg

Operating junction temperature range -40 to +175 ° C

j

8ATO220FPAC T

Symbol Parameter Value Unit

2

PA K 2 .5

°C/WTO220FPAC 6

R

th(j-c)

TO-220AC / D

Junction to case

TO220AB Ins 5.5

A

Table 3. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

= 125° C 10 100

T

j

T

= 25° C

j

= 150° C 0.9 1.1

T

j

V

R

= 8 A

I

F

= V

RRM

10

1.5

T

To evaluate the conduction losses use the following equation: P = 0.83 x I

+ 0.034 x I

F(AV)

F2(RMS)

µA

VTj = 100° C 1.05 1.3

2/11

STTH8R04 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

t

Forward recovery time

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

13

12

11

10

9

8

7

6

5

4

3

2

1

0

01234567891011

δ=0.05

δ=0.1 δ=0.2

I

F(AV)

(A)

δ=0.5

δ

δ=1

=tp/T

Test conditions

I

= 1 A, dIF/dt = -50 A/µs,

F

VR = 30 V, Tj = 25° C

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 8 A, dIF/dt = -200 A/µs,

I

F

VR = 320 V, Tj = 125° C

I

= 8 A, dIF/dt = -200 A/µs,

F

VR = 320 V, Tj = 125° C

= 8 A, dIF/dt = 100 A/µs

I

F

= 1.1 x V

V

FR

= 8 A, dIF/dt = 100 A/µs

I

F

, Tj = 25° C

Fmax

Figure 2. Forward voltage drop versus

IFM(A)

200

180

160

140

120

100

80

T

tp

60

40

20

0

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0

Min Typ Max Unit

forward current

TJ=150°C

(Maximum values)

TJ=150°C

(Typical values)

35 50

25 35

5.5 8 A

0.4

150 ns

2.9 V

TJ=25°C

(Maximum values)

VFM(V)

ns

Figure 3. Relative variation of thermal

impedance junction to case versus pulse duration

Zth

/Rth

(j-c)

1.0

0.1

1.E-03 1.E-02 1.E-01 1.E+00

(j-c)

Single pulse

TO-220AC

TO-220AC Ins

D²PAK

tp(s)

Figure 4. Relative variation of thermal

impedance junction to case versus pulse duration TO-220FPAB

Zth

/Rth

(j-c)

1.0

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

3/11

(j-c)

Single pulse

TO-220FPAB

tp(s)

Characteristics STTH8R04

Figure 5. Peak reverse recovery current

versus dI

IRM(A)

12

IF= 8 A

11

=320 V

V

R

10

9

8

7

6

5

4

3

2

1

0

10 100 1000

/dt (typical values)

F

Tj=125 °C

Tj=25 °C

dIF/dt(A/µs)

Figure 7. Reverse recovery charges versus

dI

/dt (typical values)

F

QRR(nC)

200

IF= 8 A

180

VR=320 V

160

140

120

100

80

60

40

20

0

10 100 1000

Tj=125 °C

Tj=25 °C

dIF/dt(A/µs)

Figure 6. Reverse recovery time versus

dIF/dt (typical values)

tRR(ns)

140

120

100

80

60

40

20

0

10 100 1000

Tj=125 °C

Tj=25 °C

IF= 8 A

V

=320 V

R

dIF/dt(A/µs)

Figure 8. Thermal resistance junction to

ambient versus copper surface under tab (Epoxy printed circuit board FR4, e

Rth

(°C/W)

(j-a)

80

70

60

50

40

30

20

10

0

0 2 4 6 8 10 12 14 16 18 20

SCU(cm²)

=35µm)

CU

D²PAK

4/11