ST STTH8R03G, STTH8R03D User Manual
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STTH8R03G/D |
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300V HYPERFAST RECTIFIER
MAJOR PRODUCT CHARACTERISTICS
IF(AV) |
8 A |
VRRM |
300 V |
IRM (typ.) |
4A |
Tj (max) |
175 °C |
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VF (max) |
1.3 V |
trr (max) |
30 ns |
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FEATURES AND BENEFITS
■Designed for high frequency applications.
■Hyperfast recovery competes with GaAs devices.
■Allows size decrease of snubbers and heatsinks.
DESCRIPTION
The TURBOSWITCH "R" is an ultra high performance diode.
This TURBOSWITCH family, which drastically cuts losses in associated MOSFET when run at high dIF/dt, is suited for HF OFF-Line SMPS and DC/DC converters.
ABSOLUTE RATINGS (limiting values, per diode)
K
A
K
TO-220AC
STTH8R03D
K 
A
NC
D2PAK
STTH8R03G
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VRRM |
Repetitive peak reverse voltage |
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300 |
V |
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IF(RMS) |
RMS forward current |
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20 |
A |
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IF(AV) |
Average forward current |
Tc = 140°C δ = 0.5 |
8 |
A |
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IFSM |
Surge non repetitive forward current |
tp = 10 ms sinusoidal |
80 |
A |
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Tstg |
Storage temperature range |
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- 65 + 175 |
°C |
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Tj |
Maximum operating junction temperature |
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+ 175 |
°C |
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February 2001 - Ed: 1H |
1/6 |
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STTH8R03G/D
THERMAL AND POWER DATA
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Value |
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Rth (j-c) |
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Junction to case |
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2.5 |
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°C/W |
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STATIC ELECTRICAL CHARACTERISTICS |
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Symbol |
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Parameter |
Tests conditions |
Min. |
Typ. |
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Max. |
Unit |
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IR * |
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Reverse leakage |
VR = VRRM |
Tj = 25°C |
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10 |
μA |
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current |
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Tj = 125°C |
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15 |
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100 |
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VF ** |
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Forward voltage drop |
IF = 8 A |
Tj = 25°C |
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1.8 |
V |
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Tj = 125°C |
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1.05 |
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1.3 |
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Pulse test : |
* tp = 5 ms, δ < 2 % |
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** tp = 380 μs, δ < 2% |
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To evaluate the maximum conduction losses use the following equation :
P = 0.9 x IF(AV) + 0.05 IF2(RMS)
RECOVERY CHARACTERISTICS
Symbol |
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Tests conditions |
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Min. |
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Typ. |
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Max. |
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Unit |
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trr |
IF = 0.5 A |
Irr = 0.25 A IR = 1A |
Tj = 25°C |
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13 |
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ns |
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IF = 1 A dIF/dt = - 50 A/μs VR = 30V |
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30 |
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IRM |
VR = 200 V IF = 8A |
dIF/dt = - 200A/μs |
Tj = 125°C |
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4 |
5.5 |
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A |
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S factor |
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0.4 |
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TURN-ON SWITCHING CHARACTERISTICS |
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Symbol |
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Tests conditions |
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Min. |
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Typ. |
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Max. |
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Unit |
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tfr |
Tj = 25°C |
I F = 8A |
dIF/dt = 100A/μs |
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200 |
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ns |
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measured at 1.1xVFmax |
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VFP |
Tj = 25°C |
I F = 8A |
dIF/dt = 100A/μs |
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3.5 |
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V |
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