ST STTH8L06 User Manual

STTH8L06

Turbo 2 ultrafast high voltage rectifier

Features

■Ultrafast switching

■Low reverse recovery current

■Low thermal resistance

■Reduces switching and conduction losses

■Package insulation voltage:

–TO-220AC Ins: 2500 V rms

–TO-220FPAC: 2000 V DC

Description

The STTH8L06, which is using ST Turbo2 600 V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections.

The device is also intended for use as a free wheeling diode in power supplies and other power switching applications.

	K
		A	A
	K		K
	TO-220AC		TO-220FPAC
	STTH8L06D		STTH8L06FP
	K
	A		A
	NC
			K
	D2PAK		TO-220AC Insulated
STTH8L06G			STTH8L06DIRG
Table 1.	Device summary
	Symbol		Value
	IF(AV)		8 A
	VRRM		600 V
	IR (max)		200 µA
	Tj		175 °C
	VF (typ)		0.85 V
	trr (typ)		75 ns

February 2012

Doc ID 8373 Rev 6

1/11

www.st.com

Characteristics	STTH8L06

1 Characteristics

	Table 2.	Absolute ratings (limiting values)
	Symbol		Parameter		Value	Unit
	VRRM	Repetitive peak reverse voltage			600	V
	IF(RMS)	Forward rms current	TO-220AC / TO-220FPAC / D2PAK		30	A
			TO-220AC Ins.		24
		Average forward current	TO-220AC / D2PAK	Tc = 150 °C
	IF(AV)		TO-220FPAC	Tc = 125 °C	8	A
		δ = 0.5
			TO-220AC Ins.	Tc = 135 °C
	IFSM	Surge non repetitive forward current		tp = 10 ms sinusoidal	120	A
	Tstg	Storage temperature range			-65 to 175	°C
	Tj	Operating junction temperature range			-40 to 175	°C

Table 3.	Thermal resistance
Symbol		Parameter		Value (max)	Unit
			TO-220AC / D2PAK	2.5
Rth(j-c)	Junction to case		TO-220FPAC	5	°C/W
			TO-220AC Ins.	4

Table 4.	Static electrical characteristics
Symbol	Parameter	Test conditions		Min.	Typ.	Max.	Unit
IR	Reverse leakage current	Tj = 25 °C	VR = VRRM			8	µA
		Tj = 150 °C			16	200
VF	Forward voltage drop	Tj = 25 °C	IF = 8 A			1.3	V
		Tj = 150 °C			0.85	1.05

To evaluate the conduction losses use the following equation: P = 0.89 x IF(AV) + 0.022 IF2(RMS)

Table 5.	Dynamic characteristics
Symbol	Parameter		Test conditions	Min.	Typ.	Max.	Unit
trr	Reverse	Tj = 25 °C	IF = 1 A, dIF/dt = -50 A/µs VR = 30 V		75	105	ns
	recovery time
IRM	Reverse	Tj = 125 °C	IF = 8 A, dIF/dt = 100 A/µs,		7.2	10	A
	recovery current		VR = 400 V
tfr	Forward		IF = 8 A, dIF/dt = 100 A/µs			150	ns
	recovery time		VFR = 1.1 x VFmax
		Tj = 25°C
VFP	Forward		IF = 8 A, dIF/dt = 100 A/µs			6	V
	recovery voltage

2/11	Doc ID 8373 Rev 6

STTH8L06	Characteristics

Figure 1. Conduction losses versus average current

Figure 2. Forward voltage drop versus forward current

P(W)						IFM(A)
11						100.0
10	δ = 0.05	δ = 0.1	δ = 0.2	δ = 0.5			Tj=150°C
							(maximum values)
9					δ = 1					Tj=25°C
8							Tj=150°C			(maximum values)
						10.0	(typical values)
7
6
5
4						1.0
3					T
2
1		IF(AV)(A)		δ=tp/T	tp				VFM(V)
0						0.1
0	2	4	6	8	10	0.0	0.5	1.0	1.5	2.0	2.5	3.0

Figure 3. Relative variation of thermal	Figure 4. Relative variation of thermal
impedance junction to case versus	impedance junction to case versus
pulse duration (TO-220FPAC)	pulse duration

Zth(j-c)/Rth(j-c)					1.0	Zth(j-c)/Rth(j-c)
1.0
0.9					0.9	(TO-220AC,TO-220AC Ins, D2PAK)
0.8					0.8
0.7					0.7
0.6					0.6
0.5					0.5
0.4					0.4
0.3					0.3	Single pulse
0.2	Single pulse			T	0.2				T
0.1		tp(s)			0.1		tp(s)
			=tp/T	tp				δ=tp/T	tp
0.0			δ		0.0
1.E-03	1.E-02	1.E-01	1.E+00	1.E+01	1.E-03		1.E-02	1.E-01	1.E+00

Figure 5. Peak reverse recovery current	Figure 6. Reverse recovery time versus
versus dIF/dt (typical values)	dIF/dt (typical values)

IRM(A)											trr(ns)
14	VR=400V										1000
13																				VR=400V
	Tj=125°C
						IF=2 x IF(AV)					900									Tj=125°C
12
11					IF=IF(AV)						800
10
											700
9			IF=0.5 x IF(AV)								600
8
														IF=2 x IF(AV)
7		IF=0.25 x IF(AV)									500
6											400				IF=IF(AV)
5
																IF=0.5 x IF(AV)
4											300
3											200
2											100
1				dIF/dt(A/µs)											dIF/dt(A/µs)
0											0
0	20	40	60	80	100	120	140	160	180	200	0	20	40	60	80	100	120	140	160	180	200

Doc ID 8373 Rev 6

3/11

Characteristics	STTH8L06
Figure 7. Reverse recovery charges	Figure 8. Softness factor versus
versus dIF/dt (typical values)	dIF/dt (typical values)

Qrr(nC)											S factor
1000											2.0
900	VR=400V				IF=2 x IF(AV)						1.8							IF≤2 x IF(AV)
	Tj=125°C																	VR=400V
																		Tj=125°C
800											1.6
700					IF=IF(AV)						1.4
600											1.2
500					IF=0.5 x IF(AV)						1.0
400											0.8
300											0.6
200											0.4
100				dIF/dt(A/µs)							0.2				dIF/dt(A/µs)
0											0.0
0	20	40	60	80	100	120	140	160	180	200	0	25	50	75	100	125	150	175	200

Figure 9. Relative variations of dynamic	Figure 10. Transient peak forward voltage
parameters versus junction	versus dIF/dt (typical values)
temperature

1.25					VFP(V)
					7
		S factor				IF=IF(AV)
					6	Tj=125°C
1.00
		IRM			5
0.75
		QRR			4
0.50					3
0.25			IF≤ 2 x IF(AV)		2
			VR=400V
			Reference: Tj=125°C
		Tj(°C)			1
									dIF/dt(A/µs)
0.00
25	50	75	100	125	0
					0	20	40	60	80	100	120	140	160	180	200

Figure 11. Forward recovery time versus	Figure 12. Junction capacitance versus
dIF/dt (typical values)	reverse voltage applied (typical
	values)

tfr(ns)											C(pF)
300									IF=IF(AV)		1000
														F=1MHz
								VFR=1.1 x VF max.
														VOSC=30mVRMS
									Tj=125°C
250														Tj=25°C
200											100
150
100											10
50
0				dIF/dt(A/µs)							1		VR(V)
0	20	40	60	80	100	120	140	160	180	200	1	10	100	1000

4/11	Doc ID 8373 Rev 6