ST STTH8L06 User Manual

STTH8L06

Turbo 2 ultrafast high voltage rectifier

Features

■ Ultrafast switching

■ Low reverse recovery current

■ Low thermal resistance

■ Reduces switching and conduction losses

■ Package insulation voltage:

– TO-220AC Ins: 2500 V rms
– TO-220FPAC: 2000 V DC

Description

The STTH8L06, which is using ST Turbo2 600 V
technology, is specially suited as boost diode in
discontinuous or critical mode power factor
corrections.

The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.

K

A

K

TO-220AC

STTH8L06D

K

A

NC

D2PAK

STTH8L06G

Table 1. Device summary

TO-220FPAC

STTH8L06FP

TO-220AC Insulated

STTH8L06DIRG

Symbol Value

I

F(AV)

V

RRM

(max) 200 µA

I

R

T

j

(typ) 0.85 V

V

F

(typ) 75 ns

t

rr

K

8 A

600 V

175 °C

A

A

K

February 2012 Doc ID 8373 Rev 6 1/11

www.st.com

11

Characteristics STTH8L06

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

I

F(RMS)

Repetitive peak reverse voltage 600 V

RRM

Forward rms current

TO-220AC / TO-220FPAC / D

TO-220AC Ins. 24

2

PAK 30

TO-220AC / D2PAK Tc = 150 °C

FSM

stg

T

Average forward current
δ = 0.5

TO-220AC Ins. T

= 125 °C

c

= 135 °C

c

8ATO-220FPAC T

Surge non repetitive forward current tp = 10 ms sinusoidal 120 A

Storage temperature range -65 to 175 °C

Operating junction temperature range -40 to 175 °C

j

I

F(AV)

I

T

Table 3. Thermal resistance

Symbol Parameter Value (max) Unit

2

PA K 2 .5

°C/WTO-220FPAC 5

R

th(j-c)

TO-220AC / D

Junction to case

TO-220AC Ins. 4

Table 4. Static electrical characteristics

A

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

= 25 °C

IR Reverse leakage current

V

Forward voltage drop

F

j

= 150 °C 16 200

T

j

T

= 25 °C

j

= 150 °C 0.85 1.05

T

j

V

R

= 8 A

I

F

= V

RRM

To evaluate the conduction losses use the following equation: P = 0.89 x I

Table 5. Dynamic characteristics

F(AV)

+ 0.022 I

8

1.3

F2(RMS)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Reverse

t

rr

recovery time

Reverse

I

RM

recovery current

Forward

t

fr

recovery time

V

Forward

FP

recovery voltage

= 25 °C IF = 1 A, dIF/dt = -50 A/µs VR = 30 V 75 105 ns

T

j

= 8 A, dIF/dt = 100 A/µs,

I

T

= 125 °C

j

= 25°C

T

j

F

VR = 400 V

I

= 8 A, dIF/dt = 100 A/µs

F

VFR = 1.1 x V

Fmax

IF = 8 A, dIF/dt = 100 A/µs

7.2 10 A

150 ns

6V

µA

V

2/11 Doc ID 8373 Rev 6

STTH8L06 Characteristics

Figure 1. Conduction losses versus

average current

P(W)

11

10

9

8

7

6

5

4

3

2

1

0

0246810

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Relative variation of thermal

impedance junction to case versus
pulse duration (TO-220FPAC)

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

t (s)

p

δ

=tp/T

T

tp

Figure 5. Peak reverse recovery current

versus dI

I (A)

RM

14

V =400V

R

T=125°C

13

j

12

11

10

9

8

7

6

5

4

3

2

1

0

0 20 40 60 80 100 120 140 160 180 200

I =0.25 x I

F F(AV)

/dt (typical values)

F

I=I

F F(AV)

I =0.5 x I

F F(AV)

dI /dt(A/µs)

F

I =2 x I

F F(AV)

Figure 2. Forward voltage drop versus

forward current

I (A)

FM

100.0

10.0

1.0

0.1

T=150°C

j

(maximum values)

T=25°C

j

V (V)

FM

(maximum values)

T=150°C

j

(typical values)

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Figure 4. Relative variation of thermal

impedance junction to case versus
pulse duration

Z/R

th(j-c) th(j-c)

1.0

(TO-220AC,TO-220AC Ins, D PAK)

0.9

0.8

0.7

0.6

0.5

0.4

0.3

Single pulse

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

2

T

=tp/T

δ

Figure 6. Reverse recovery time versus

dIF/dt (typical values)

t (ns)

rr

1000

900

800

700

600

500

400

300

200

100

0

0 20 40 60 80 100 120 140 160 180 200

I =2 x I

F F(AV)

I=I

F F(AV)

I =0.5 x I

F F(AV)

dI /dt(A/µs)

F

V =400V

R

T=125°C

j

tp

Doc ID 8373 Rev 6 3/11

Characteristics STTH8L06

Figure 7. Reverse recovery charges

versus dI

Q (nC)

rr

1000

V =400V

R

T=125°C

900

j

800

700

600

500

400

300

200

100

0

0 20 40 60 80 100 120 140 160 180 200

/dt (typical values)

F

I =2 x I

F F(AV)

I=I

F F(AV)

I =0.5 x I

F F(AV)

dI /dt(A/µs)

F

Figure 9. Relative variations of dynamic

parameters versus junction
temperature

1.25

1.00

0.75

0.50

0.25

0.00

25 50 75 100 125

I

RM

Q

RR

T (°C)

j

S factor

I 2 x I

≤

F F(AV)

V =400V

R

Reference:T =125°C

j

Figure 11. Forward recovery time versus

dI

/dt (typical values)

F

t (ns)

fr

300

250

I=I

F F(AV)

V =1.1 x V max.

FR F

T=125°C

j

Figure 8. Softness factor versus

dIF/dt (typical values)

S factor

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0 25 50 75 100 125 150 175 200

dI /dt(A/µs)

F

I 2 x I

≤

F F(AV)

V =400V

R

T=125°C

j

Figure 10. Transient peak forward voltage

versus dI

V (V)

FP

7

I=I

F F(AV)

T=125°C

j

6

5

4

3

2

1

0

0 20 40 60 80 100 120 140 160 180 200

/dt (typical values)

F

dI /dt(A/µs)

F

Figure 12. Junction capacitance versus

reverse voltage applied (typical
values)

C(pF)

1000

F=1MHz

V =30mV

OSC RMS

T=25°C

j

200

150

100

50

dI /dt(A/µs)

0

0 20 40 60 80 100 120 140 160 180 200

F

100

10

1

1 10 100 1000

4/11 Doc ID 8373 Rev 6

V (V)

R