ST STTH812 User Manual

STTH812

Ultrafast recovery - 1200 V diode

Main product characteristics

I

F(AV)

V

RRM

T

j

(typ) 1.25 V

V

F

(typ) 50 ns

t

rr

8 A

1200 V

175° C

Features and benefits

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

■ Insulated packages:

– TO-220Ins

Electrical insulation = 2500 V
Capacitance = 7 pF

– TO-220FPAC

Electrical insulation = 2000 V
Capacitance = 12 pF

RMS

RMS

A

K

TO-220AC

STTH812D

K

A

NC

2

D

PAK

STTH812G

Order codes

Part Number Marking

KA

A

K

TO-220FPAC

STTH812FP

A

K

TO-220Ins

STTH812DI

Description

The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term

STTH812D STTH812D

STTH812G STTH812G

STTH812G-TR STTH812G

STTH812FP STTH812FP

STTH812DI STTH812DI

reliability.

Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.

The improved performance in low leakage current,
and therefore thermal runaway guard band, is an
immediate competitive advantage for this device.

March 2006 Rev 1 1/11

www.st.com

11

Characteristics STTH812

1 Characteristics

Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage 1200 V

2

TO-220AC / D

PAK / TO-220FPAC 30

RMS forward current

TO-220AC Ins 20

2

TO-220AC / D

Average forward current, δ = 0.5

PA K Tc = 140° C

= 75° C

c

8ATO-220FPAC T

TO-220AC Ins Tc = 115° C

I

FRM

I

FSM

T

Table 2. Thermal parameters

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 100 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 80 A

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature 175 °C

j

Symbol Parameter Value Unit

2

PA K 1 . 9

R

th(j-c)

TO-220AC / D

Junction to case

TO-220AC Ins 3.1

A

°C/WTO-220FPAC 5.4

Table 3. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

= 125° C 5 50

T

j

= 25° C

T

j

T

= 150° C 1.25 1.9

j

V

R

I

= 8 A

F

= V

RRM

8

2.2

T

To evaluate the conduction losses use the following equation:
P = 1.5 x I

F(AV)

+ 0.05 I

F2(RMS)

µA

VTj = 125° C 1.30 2.0

2/11

STTH812 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

Forward recovery time

t

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

20

18

16

14

12

10

8

6

4

2

0

012345678 910

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

Figure 3. Relative variation of thermal

impedance junction to case
versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse
TO-220AC

0.9

2

DPAK
TO-220Ins

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

Test conditions

IF = 1 A, dIF/dt = -50 A/µs,
V

= 30 V, Tj = 25° C

R

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 8 A, dIF/dt = -200 A/µs,

I

F

= 600 V, Tj = 125° C

V

R

= 8 A, dIF/dt = -200 A/µs,

I

F

V

= 600 V, Tj = 125° C

R

= 8 A dIF/dt = 50 A/µs

I

F

= 1.5 x V

V

FR

I

= 8 A, dIF/dt = 50 A/µs,

F

T

= 25° C

j

, Tj = 25° C

Fmax

Figure 2. Forward voltage drop versus

I (A)

FM

80

70

δ = 1

T

tp

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Figure 4. Relative variation of thermal

Z/R

th(j-c) th(j-c)

1.0

Single pulse
TO-220FPAC

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

Min. Typ Max. Unit

100

ns

50 70

14 21 A

2

400 ns

7V

forward current

T=150°C

j

(typical values)

T=25°C

j

T=150°C

j

(maximum values)

V (V)

FM

(maximum values)

impedance junction to case versus
pulse duration

t (s)

p

3/11

Characteristics STTH812

Figure 5. Peak reverse recovery current

versus dI

I (A)

RM

35

V =600V

R

T=125°C

j

30

25

I =0.5 x I

20

15

10

5

0

0 50 100 150 200 250 300 350 400 450 500

FF(AV)

/dt (typical values)

F

I =2 x I

FF(AV)

I=I

FF(AV)

dI /dt(A/µs)

F

Figure 7. Reverse recovery charges versus

dI

/dt (typical values)

F

Q (µC)

rr

3.0

V =600V

R

T=125°C

j

2.5

2.0

1.5

1.0

0.5

0.0

0 50 100 150 200 250 300 350 400 450 500

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

dI /dt(A/µs)

F

Figure 9. Relative variations of dynamic

parameters versus junction
temperature

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

0.25

0.00

25 50 75 100 125

S factor

t

I

RM

Q

rr

RR

T (°C)

j

I=I

FF(AV)

V =600V

R

Reference:T =125°C

j

Figure 6. Reverse recovery time versus dI

(typical values)

t (ns)

rr

500

450

400

350

300

250

200

150

100

50

0

0 50 100 150 200 250 300 350 400 450 500

I =2 x I

FF(AV)

I=I

FF(AV)

dI /dt(A/µs)

F

I =0.5 x I

FF(AV)

Figure 8. Softness factor versus dI

F

V =600V
T=125°C

/dt

R

j

(typical values)

S factor

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

I 2xI

≤

FF(AV)

V =600V

R

T=125°C

j

Figure 10. Transient peak forward voltage

versus dI

V (V)

FP

45

I=I

FF(AV)

T=125°C

j

40

35

30

25

20

15

10

5

0

0 100 200 300 400 500

/dt (typical values)

F

dI /dt(A/µs)

F

F

/dt

4/11