ST STTH810 User Manual

Main product characteristics

I

F(AV)

V

RRM

T

j

(typ) 1.30 V

V

F

(typ) 47 ns

t

rr

8 A

1000 V

175° C

Features and benefits

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

■ Insulated packages:

– TO-220Ins
– Electrical insulation = 2500 V

Capacitance = 7 pF

– TO-220FPAC

Electrical insulation = 2500 V
Capacitance = 12 pF

RMS

RMS

STTH810

Ultrafast recovery - high voltage diode

A

K

TO-220AC

STTH810D

K

NC

2

DPAK

STTH810G

A

A

K

A

K

TO-220FPAC

STTH810FP

A

K

TO-220Ins

STTH810DI

Order codes

Description

The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.

Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.

The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.

March 2006 Rev 1 1/11

Part Number Marking

STTH810D STTH810D

STTH810G STTH810G

STTH810G-TR STTH810G

STTH810FP STTH810FP

STTH810DI STTH810DI

www.st.com

11

Characteristics STTH810

1 Characteristics

Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage 1000 V

2

TO-220AC / D

PAK / TO-220FPAC 30

RMS forward current

TO-220AC Ins 20

2

TO-220AC / D

Average forward current, δ = 0.5

PA K Tc = 130° C

= 75° C

c

8ATO-220FPAC T

TO-220AC Ins Tc = 105° C

I

FRM

I

FSM

T

Table 2. Thermal parameters

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 100 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 60 A

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature 175 °C

j

Symbol Parameter Value Unit

2

PA K 2 . 5

R

th(j-c)

TO-220AC / D

Junction to case

TO-220AC Ins 4.1

A

°C/WTO-220FPAC 5.8

Table 3. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

= 125° C 2 20

T

j

= 25° C

T

j

T

= 150° C 1.3 1.7

j

V

R

I

= 8 A

F

= V

RRM

5

2

T

To evaluate the conduction losses use the following equation:
P = 1.3 x I

F(AV)

+ 0.05 I

F2(RMS)

µA

VTj = 100° C 1.4 1.8

2/11

STTH810 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

Forward recovery time

t

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

18

16

14

12

10

8

6

4

2

0

012345678910

=0.05

=0.1

=0.2

I(A)

F(AV)

=0.5

T

Test conditions

IF = 1 A, dIF/dt = -50 A/µs,
V

= 30 V, Tj = 25° C

R

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 8 A, dIF/dt = -200 A/µs,

I

F

= 600 V, Tj = 125° C

V

R

= 8 A, dIF/dt = -200 A/µs,

I

F

V

= 600 V, Tj = 125° C

R

= 8 A dIF/dt = 50 A/µs

I

F

= 1.5 x V

V

FR

I

= 8 A, dIF/dt = 50 A/µs,

F

T

= 25° C

j

, Tj = 25° C

Fmax

Figure 2. Forward voltage drop versus

I (A)

FM

=1

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Min. Typ Max. Unit

forward current

Tj=150°C

(Maximum values)

Tj=150°C

(Typical values)

64 85

47 65

12 16 A

2

300 ns

5.5 V

Tj=25°C

(Maximum values)

V (V)

FM

ns

Figure 3. Relative variation of thermal

impedance junction to case
versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse

0.9

DO-220AB

D²PAK

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t(s)

p

Figure 4. Relative variation of thermal

impedance junction to case versus
pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse

0.9

TO-220FPAB

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

3/11

t(s)

p

Characteristics STTH810

Figure 5. Peak reverse recovery current

versus dI

I(A)

RM

25

VR=600V
T

=125°C

j

20

15

IF=0.5 x I

F(AV)

10

5

0

0 50 100 150 200 250 300 350 400 450 500

/dt (typical values)

F

IF= I

F(AV)

dI /dt(A/µs)

F

IF= 2 x I

F(AV)

Figure 7. Reverse recovery charges

versus dI

Q (µC)

rr

2.5

VR=600V

T

=125°C

j

2.0

1.5

1.0

0.5

0.0
0 50 100 150 200 250 300 350 400 450 500

/dt (typical values)

F

IF= 2 x I

IF=0.5 x I

dI /dt(A/µs)

F

IF= I

F(AV)

F(AV)

F(AV)

Figure 6. Reverse recovery time versus dI

(typical values)

t (ns)

rr

500

450

400

IF= 2 x I

F(AV)

VR=600V
T

=125°C

j

350

300

250

IF=I

)

F(AV

200

150

100

50

0

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

Figure 8. Softness factor versus dI

IF=0.5 x I

F(AV)

/dt

F

(typical values)

S factor

3.0

2.5

2.0

1.5

dI /dt(A/µs)

1.0
0 50 100 150 200 250 300 350 400 450 500

F

IF= 2 x I

VR=600V

=125°C

T

j

F(AV)

F

/dt

Figure 9. Relative variations of dynamic

parameters versus junction
temperature

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0
25 50 75 100 125

S

factor

I

RM

t

Q

RR

RR

T (°C)

j

IF= I
VR=600V

Reference: T

F(AV)

=125°C

j

Figure 10. Transient peak forward voltage

versus dI

V (V)

FP

45

IF= I

F(AV)

Tj=125°C

40

35

30

25

20

15

10

5

0

0 100 200 300 400 500

/dt (typical values)

F

dI /dt(A/µs)

F

4/11