ST STTH806TTI User Manual
®
STTH806TTI
TURBOSWITCH™ Tandem 600V ULTRA-FAST BOOST DIODE
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
600 V (in series)
8A
Tj (max) 150 °C
(max) 2.6 V
V
F
(typ.) 4 A
I
RM
FEATURES AND BENEFITS
ESPECIALLY SUITED AS BOOST DIODE IN
■
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS.
■ DESIGNED FOR HIGH DI/DT OPERATION.
■ ULTRA-FAST RECOVERY CURRENT TO
COMPETE WITH GaAs DEVICES. SIZE
DIMINUTION OF MOSFET AND HEATSINKS
ALLOWED.
■
INTERNAL CERAMIC INSULATED PACKAGE
ALLOWS FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK.
■
MATCHED DIODES FOR TYPICAL PFC
APPLICATION WITHOUT VOLTAGE BALANCE
NETWORK.
■
INSULATED VERSION: :
Insulated voltage = 2500 V
(RMS)
Capacitance = 7 pF
123
3
2
1
Insulated TO-220AB
DESCRIPTION
The TURBOSWITCH “H” is an ultra high
performance diodecomposedof two300V dicein
series. TURBOSWITCH “H” family drastically cuts
losses in the associated MOSFET when run at
F
/dt.
high dI
ABSOLUTE RATINGS (limiting values for both diodes in series)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
FSM
T
stg
Tj
TM: TURBOSWITCH is a trademark of STMicroelectronics
February 2003 - Ed: 4B
Repetitive peak reverse voltage
RMS forward current
Surge non repetitive forward current tp = 10 ms sinusoidal
Storage temperature range
Maximum operating junction temperature
600 V
14 A
80 A
-65 +150 °C
+ 150 °C
1/5
STTH806TTI
THERMAL AND POWER DATA
Symbol Parameter Test conditions Value Unit
R
R
R
th (j-c)
th (c)
th (j-c)
P
Junction to case thermal resistance Per diode
Junction to case thermal resistance Total
1
Conduction power dissipation for
both diodes
Coupling
I
=8A δ= 0.5
F(AV)
Tc = 80°C
STATIC ELECTRICAL CHARACTERISTICS (for both diodes)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
5 °C/W
0.2
2.6
27 W
*
I
R
Reverse leakage cur-
V
R=VRRM
rent
V
**
F
Forward voltage drop I
= 8A Tj=25°C
F
Tj = 25°C
Tj = 125°C
Tj = 125°C
15 100
2.1 2.6
10 µA
3.6 V
Pulse test : * tp=5ms,δ<2%
** tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=1.8xI
F(AV)
+ 0.1 I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol Tests Conditions Min. Typ. Max. Unit
13 ns
30
4 5.5 A
0.4 -
S
trr
I
RM
factor
= 0.5 A Irr = 0.25 A IR= 1 A Tj = 25°C
I
F
I
=1A dIF/dt=-50A/µsVR=30V
F
VR= 400 V IF=8A dIF/dt = -200 A/µs Tj = 125°C
TURN-ON SWITCHING CHARACTERISTICS
Symbol Tests Conditions Min. Typ. Max. Unit
tfr
=8A dIF/dt = 100 A/µs,
I
F
Tj = 25°C
200 ns
measured at 1.1 x VFmax
2/5
V
FP
IF=8A dIF/dt = 100 A/µs Tj = 25°C
7V
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