ST STTH806DTI User Manual
Tandem 600 V hyperfast boost diode
Table 1. Main product characteristics
I
F(AV)
V
RRM
T
j (max)
V
F (max)
I
RM (typ.)
t
rr (typ.)
Features and benefits
■ Especially suited as boost diode in continuous
mode power factor correctors and hard
switching conditions
■ Designed for high di/dt operation. Hyperfast
recovery current to compete with SiC devices.
Allows downsizing of mosfet and heatsinks
■ Internal ceramic insulated devices with equal
thermal conditions for both 300 V diodes
■ Insulation (2500 V
same heatsink as mosfet and flexible
heatsinking on common or separate heatsink
■ Static and dynamic equilibrium of internal
diodes are warranted by design
■ Package Capacitance: C = 7 pF
Table 3. Absolute ratings (limiting values)
) allows placement on
RMS
8 A
600 V
150° C
2.24 V
4 A
13 ns
STTH806DTI
12
2
1
Insulated TO-220AC
Description
The TURBOSWITCH “H” is an ultra high
performance diode composed of two 300 V dice
in series. TURBOSWITCH “H” family drastically
cuts losses in the associated MOSFET when run
at high dI
Table 2. Order codes
/dt.
F
Part number Marking
STTH806DTI STTH806DTI
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
FSM
T
T
Repetitive peak reverse voltage 600 V
RMS forward voltage 14 A
Surge non repetitive forward current tp = 10 ms sinusoidal 180 A
Storage temperature range -65 to + 150 ° C
stg
Maximum operating junction temperature 150 ° C
j
July 2007 Rev 5 1/7
www.st.com
7
Characteristics STTH806DTI
1 Characteristics
Table 4. Thermal parameter
Symbol Parameter Value Unit
R
th(j-c)
Table 5. Static electrical characteristics
Junction to case thermal resistance 2.6 °C/W
Symbol Parameter Test conditions Min. Typ Max. Unit
IR
V
= 25° C
(1)
Reverse leakage current
(2)
F
Forward voltage drop
j
= 125° C 15 100
T
j
= V
V
R
RRM
Tj = 25° C
IF = 8 A
= 150° C 1.95 2.4
T
j
10
µA
3.6
T
1. Pulse test: tp = 100 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.7 x I
Table 6. Dynamic characteristics
Symbol Parameter Test conditions Min Typ Max Unit
t
rr
Reverse recovery time Tj = 25° C
F(AV)
+ 0.087 I
F2(RMS)
= 0.5 A, Irr = 0.25 A, IR = 1 A 13
I
F
I
= 1 A, dIF/dt = - 50 A/µs
F
VR = 30 V
30
V
ns
I
Table 7. Turn-on switching characteristics
Reverse recovery current
RM
= 125° C
T
j
Reverse recovery charges 50
Q
rr
= 8 A, VR = 400,
I
F
/dt = - 200 A/µs
VdI
F
45.5
Symbol Parameter Test conditions Min. Typ Max. Unit
= 8 A, dIF/dt = 100 A/µs
I
Forward recovery time Tj = 25° C
t
fr
V
Forward recovery voltage Tj = 25° C IF = 8 A, dIF/dt = 100 A/µs 7 V
FP
F
VFR = 1.1 x VF max
200 ns
AS Reverse recovery softness factor 0.4
2/7
STTH806DTI Characteristics
Figure 1. Conduction losses versus average
current
P(W)
30
25
20
15
10
5
0
012345678910
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Z/R
th(j-c) th(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0
t (s)
p
δ
=tp/T
T
tp
Figure 2. Forward voltage drop versus
forward current
I (A)
FM
100
(typical values)
10
1
012345678
T=125°C
j
T=125°C
j
(maximum values)
V (V)
FM
T=25°C
j
(maximum values)
Figure 4. Peak reverse recovery current
versus dI
I (A)
RM
9
V =400V
R
8
T=125°C
j
7
6
5
4
3
2
1
0
0 50 100 150 200 250 300 350 400 450 500
I =0.5 x I
F F(AV)
/dt (typical values)
F
I =2 x I
F F(AV)
I=I
F F(AV)
dI /dt(A/µs)
F
Figure 5. Reverse recovery time versus dIF/dt
(typical values)
t (ns)
rr
60
50
I =2 x I
40
30
20
10
0
0 50 100 150 200 250 300 350 400 450 500
F F(AV)
I=I
F F(AV)
dI /dt(A/µs)
F
I =0.5 x I
F F(AV)
V =400V
R
T=125°C
j
Figure 6. Reverse charges versus dIF/dt
(typical values)
Q (nC)
rr
140
V =400V
R
T=125°C
j
120
100
80
60
40
20
0
0 100 200 300 400 500
dI /dt(A/µs)
F
3/7
I =2 x I
F F(AV)
I=I
F F(AV)
I =0.5 x I
F F(AV)
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