ST STTH806DTI User Manual

STTH806DTI

Tandem 600 V hyperfast boost diode

Table 1.	Main product characteristics
	IF(AV)	8 A
	VRRM	600 V
	Tj (max)	150° C
	VF (max)	2.24 V
	IRM (typ.)	4 A
	trr (typ.)	13 ns

Features and benefits

■Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions

■Designed for high di/dt operation. Hyperfast recovery current to compete with SiC devices. Allows downsizing of mosfet and heatsinks

■Internal ceramic insulated devices with equal thermal conditions for both 300 V diodes

■Insulation (2500 VRMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink

■Static and dynamic equilibrium of internal diodes are warranted by design

■Package Capacitance: C = 7 pF

1 2

2

1

Insulated TO-220AC

Description

The TURBOSWITCH “H” is an ultra high performance diode composed of two 300 V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt.

Table 2. Order codes

Part number

Marking

STTH806DTI STTH806DTI

Table 3.	Absolute ratings (limiting values)
Symbol	Parameter		Value	Unit
VRRM	Repetitive peak reverse voltage		600	V
IF(RMS)	RMS forward voltage		14	A
IFSM	Surge non repetitive forward current	tp = 10 ms sinusoidal	180	A
Tstg	Storage temperature range		-65 to + 150	° C
Tj	Maximum operating junction temperature		150	° C

July 2007

Rev 5

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Characteristics								STTH806DTI
1		Characteristics
Table 4.		Thermal parameter
Symbol		Parameter					Value			Unit
Rth(j-c)		Junction to case thermal resistance					2.6			°C/W
Table 5.		Static electrical characteristics
Symbol		Parameter	Test conditions			Min.	Typ	Max.		Unit
IR	(1)	Reverse leakage current	Tj = 25° C	VR = VRRM				10		µA
			Tj = 125° C				15	100
VF	(2)	Forward voltage drop	Tj = 25° C	IF = 8 A				3.6		V
			Tj = 150° C				1.95	2.4

1.Pulse test: tp = 100 ms, δ < 2%

2.Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 1.7 x IF(AV) + 0.087 IF2(RMS)

Table 6.	Dynamic characteristics
Symbol	Parameter				Test conditions			Min	Typ	Max	Unit
				IF = 0.5 A, Irr = 0.25 A, IR = 1 A					13
trr	Reverse recovery time	Tj = 25° C		I	F	= 1 A, dI	/dt = - 50 A/µs			30	ns
							F
				VR = 30 V
IRM	Reverse recovery current			IF = 8 A, VR = 400,					4	5.5
S	Reverse recovery softness factor	T	= 125° C						0.4		A
			j	VdIF/dt = - 200 A/µs
Qrr	Reverse recovery charges								50

Table 7.	Turn-on switching characteristics
Symbol	Parameter		Test conditions	Min.	Typ	Max.	Unit
tfr	Forward recovery time	Tj = 25° C	IF = 8 A, dIF/dt = 100 A/µs			200	ns
			VFR = 1.1 x VF max
VFP	Forward recovery voltage	Tj = 25° C	IF = 8 A, dIF/dt = 100 A/µs			7	V

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STTH806DTI	Characteristics
Figure 1. Conduction losses versus average Figure 2.	Forward voltage drop versus
current	forward current

P(W)											IFM(A)
30					δ = 0.2						100
				δ = 0.1			δ = 0.5
													Tj=125°C
		δ = 0.05
25													(maximum values)
20									δ = 1			Tj=125°C
												(typical values)
15											10					Tj=25°C
															(maximum values)
10									T
5
					IF(AV)(A)			δ=tp/T	tp						VFM(V)
0											1
0	1	2	3	4	5	6	7	8	9	10	0	1	2	3	4	5	6	7	8

Figure 3. Relative variation of thermal	Figure 4. Peak reverse recovery current
impedance junction to case	versus dIF/dt (typical values)
versus pulse duration

	Zth(j-c)/Rth(j-c)						IRM(A)
						9
1.0						8	VR=400V
							Tj=125°C					IF=2 x IF(AV)
0.8						7				IF=IF(AV)
						6			IF=0.5 x IF(AV)
	δ = 0.5
0.6
						5
0.4						4
	δ = 0.2
	δ = 0.1				T	3
0.2						2
	Single pulse		tp(s)
				δ=tp/T	tp	1				dIF/dt(A/µs)
0.0
						0
	1E-3	1E-2		1E-1	1E+0
						0	50	100	150	200	250	300	350	400	450	500

Figure 5. Reverse recovery time versus dIF/dt Figure 6.	Reverse charges versus dIF/dt
(typical values)	(typical values)

trr(ns)											Qrr(nC)
60											140
									VR=400V		VR=400V
											Tj=125°C					IF=2 x IF(AV)
									Tj=125°C
50											120
40			IF=2 x IF(AV)								100					IF=IF(AV)
					IF=IF(AV)		IF=0.5 x IF(AV)				80
30
																IF=0.5 x IF(AV)
											60
20											40
10											20
				dIF/dt(A/µs)									dIF/dt(A/µs)
0											0
0	50	100	150	200	250	300	350	400	450	500	0	100	200	300	400	500

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