ST STTH806 User Manual

STTH806

Turbo 2 ultrafast - high voltage rectifier

Main product characteristics

IF(AV)	8 A
VRRM	600 V
Tj	175° C
VF (typ)	1.1 V
trr (max)	35 ns

Features and benefits

■Ultrafast switching

■Low reverse current

■Low thermal resistance

■Reduces conduction and switching losses

■Insulated package TO-220AC Ins

–Insulated voltage: 2500 VRMS

–Typical package capacitance: 7 pF

Description

The STTH806 uses ST Turbo2 600 V technology. This device is specially suited for use in switching power supplies, and industrial applications.

A	K
K
	A
NC
	D2PAK
STTH806G
A	A
K	K
TO-220AC	TO-220AC Ins
STTH806D	STTH806DIRG
Order codes
Part Number	Marking
STTH806G	STTH806G
STTH806G-TR	STTH806G
STTH806D	STTH806D
STTH806DIRG	STTH806DI

Table 1.			Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
	Symbol				Parameter			Value	Unit
	VRRM		Repetitive peak reverse voltage					600	V
	IF(RMS)		RMS forward current				TO-220AC, D2PAK	30	A
							TO-220 Ins	24	A
	IF(AV)		Average forward current, δ = 0.5			Tc = 140° C	TO-220AC, D2PAK	8	A
						Tc = 120° C	TO-220 Ins	8	A
	IFSM		Surge non repetitive forward current			tp = 10 ms Sinusoidal		90	A
	Tstg		Storage temperature range					-65 to + 175	°C
	T		Maximum operating junction temperature(1)					175	°C
	j
1.	dPtot	1		condition to avoid thermal	runaway for a diode on its own heatsink
	--------------	< -------------------------
	dTj		Rth(j – a)
August 2006						Rev 2			1/9
								www.st.com

Characteristics

STTH806

1

Characteristics

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AC, D2PAK

2.5

° C/W

TO-220AC Ins

4

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25° C

VR = VRRM

8

µA

Tj = 150° C

20

200

V (2)

Forward voltage drop

Tj = 25° C

I = 8 A

1.85

V

F

Tj = 150° C

F

1.10

1.40

1.Pulse test: tp = 5 ms, δ < 2 %

2.Pulse test: tp = 380 µs, δ < 2 %

To evaluate the conduction losses use the following equation:

P = 1.07 x IF(AV) + 0.041 IF2(RMS)

Table 4.	Dynamic characteristics
Symbol	Parameter	Test conditions	Min.	Typ	Max.	Unit
		IF = 0.5 A, Irr = 0.25 A, IR = 1 A,			35
trr	Reverse recovery time	Tj = 25° C				ns
		IF = 1 A, dIF/dt = -50 A/µs,		40	55
		VR = 30 V, Tj = 25° C
IRM	Reverse recovery current	IF = 8 A, dIF/dt = -100 A/µs,		4.5	6.5
		VR = 400 V, Tj = 25° C
tfr	Forward recovery time	IF = 8 A dIF/dt = 100 A/µs			200	ns
		VFR = 1.1 x VFmax, Tj = 25° C
VFP	Forward recovery voltage	IF = 8 A dIF/dt = 100 A/µs		3.5		V
		VFR = 1.1 x VFmax, Tj = 25° C

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STTH806	Characteristics

Figure 1. Conduction losses versus average current

Figure 2. Forward voltage drop versus forward current

PF(AV)(W)											IFM(A)
15.0			δ = 0.05	δ = 0.1	δ = 0.2						100
							δ = 0.5				90
12.5											80
															Tj=150°C
									δ = 1
10.0											70			(maximum values)
											60
7.5											50			Tj=150°C
													(typical values)
											40
5.0																	Tj=25°C
											30					(maximum values)
									T
2.5											20
				IF(AV)(A)			δ	=tp/T	tp		10					VFM(V)
0.0											0
0	1	2	3	4	5	6	7	8	9	10	0.0	0.5	1.0	1.5	2.0	2.5	3.0	3.5	4.0

Figure 3. Relative variation of thermal	Figure 4. Peak reverse recovery current
impedance junction to case versus	versus dIF/dt (typical values)
pulse duration

1.0	Zth(j-c)/Rth(j-c)				IRM(A)
					14
0.9	Single pulse					VR=400V						IF=2 x IF(AV)
						Tj=125°C
					12
0.8										IF=IF(AV)
0.7					10			IF=0.5 x IF(AV)
0.6							IF=0.25 x IF(AV)
					8
0.5
0.4					6
0.3					4
0.2
0.1			tp(s)		2				dIF/dt(A/µs)
0.0					0
1.E-03		1.E-02	1.E-01	1.E+00	0	50	100	150	200	250	300	350	400	450	500

Figure 5. Reverse recovery time versus	Figure 6. Reverse recovery charges versus
dIF/dt (typical values)	dIF/dt (typical values)

trr(ns)											Qrr(nC)
300											450
									VR=400V			VR=400V				IF=2 x IF(AV)
250									Tj=125°C		400	Tj=125°C
		IF=2 x IF(AV)									350							IF=IF(AV)
200
											300
				IF=IF(AV)
150											250								IF=0.5 x IF(AV)
						IF=0.5 x IF(AV)
100											200
											150
50											100
															dIF/dt(A/µs)
				dIF/dt(A/µs)
0											50
0	50	100	150	200	250	300	350	400	450	500	0	50	100	150	200	250	300	350	400	450	500

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