ST STTH802-Y User Manual

STTH802-Y

Automotive ultrafast recovery diode

Features

■ Very low conduction losses

■ Negligible switching losses

■ Low forward and reverse recovery time

■ High junction temperature

■ AEC-Q101 qualified

Description

The STTH802-Y uses ST's new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits.

Packaged in DPAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive application.

K

NC

DPAK

STTH802BY-TR

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

j (max)

(typ) 0.8 V

V

F

(typ) 17 ns

t

rr

KA

A

8 A

200 V

175 °C

March 2011 Doc ID 018563 Rev 1 1/7

www.st.com

7

Characteristics STTH802-Y

1 Characteristics

Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

T

Table 3. Thermal parameters

Repetitive peak reverse voltage 200 V

RRM

Forward rms current 16 A

T

Average forward current, δ = 0.5

Surge non repetitive forward current

FSM

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature range -40 to + 175 °C

j

= 145 °C

c

= 10 ms Sinusoidal

t

p

8A

100 A

Symbol Parameter Value Unit

R

Table 4. Static electrical characteristics

Junction to case 3.2 °C/W

th(j-c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

R

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25 °C

j

= 125 °C 6 60

T

j

Tj = 25 °C

= V

V

R

RRM

0.95 1.05

IF = 8 A

= 150 °C 0.8 0.90

T

j

6

µA

V

To evaluate the conduction losses use the following equation: P = 0.73 x I

2/7 Doc ID 018563 Rev 1

F(AV)

+ 0.021 I

F2(RMS)

STTH802-Y Characteristics

Table 5. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

Reverse recovery time

Reverse recovery current

Forward recovery time

Forward recovery voltage

Test conditions

I

= 1 A, dIF/dt = -50 A/µs,

F

= 30 V, Tj = 25 °C

V

R

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25 °C

V

R

I

= 8 A, dIF/dt = -200 A/µs,

F

VR = 160 V, Tj = 125 °C

= 8 A, dIF/dt = 50 A/µs

I

F

= 1.1 x V

V

FR

= 8 A, dIF/dt = 50 A/µs,

I

F

= 25 °C

T

j

, Tj = 25 °C

Fmax

Min. Typ. Max. Unit

25 30 ns

17 22

5.5 7 A

150 ns

1.5 V

Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus

forward current (typical values)

IM(A)

100

80

60

40

20

0

P = 5 WP = 5 W

P = 2 WP = 2 W

P = 1 WP = 1 W

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

T

I

M

=tp/T

d

δ

tp

δ

IFM(A)

200

180

160

140

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Tj=150°C

Tj=25°C

VFM(V)

Figure 3. Forward voltage drop versus

forward current (maximum values)

IFM(A)

200

180

160

140

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Tj=150°C

Tj=25°C

VFM(V)

Doc ID 018563 Rev 1 3/7

Figure 4. Relative variation of thermal

impedance, junction to case, versus pulse duration

Z

th(j-c)/Rth(j-c)

1.0

Single pulse

0.1

1.E-03 1.E-02 1.E-01 1.E+00

tp(s)