ST STTH802-Y User Manual

STTH802-Y

Automotive ultrafast recovery diode

Features

■Very low conduction losses

■Negligible switching losses

■Low forward and reverse recovery time

■High junction temperature

■AEC-Q101 qualified

Description

The STTH802-Y uses ST's new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits.

Packaged in DPAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive application.

A K

K

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DPAK

STTH802BY-TR

Table 1.	Device summary
	Symbol		Value
	IF(AV)		8 A
	VRRM		200 V
	Tj (max)		175 °C
	VF (typ)		0.8 V
	trr (typ)		17 ns

March 2011

Doc ID 018563 Rev 1

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www.st.com

Characteristics	STTH802-Y

1		Characteristics
Table 2.		Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)
Symbol		Parameter							Value		Unit
VRRM		Repetitive peak reverse voltage							200		V
IF(RMS)		Forward rms current							16		A
IF(AV)		Average forward current, δ = 0.5		Tc = 145 °C					8		A
IFSM		Surge non repetitive forward current		tp = 10 ms Sinusoidal					100		A
Tstg		Storage temperature range						-65 to + 175			°C
	Tj	Maximum operating junction temperature range						-40 to + 175			°C
Table 3.		Thermal parameters
Symbol		Parameter							Value		Unit
Rth(j-c)		Junction to case							3.2		°C/W
Table 4.		Static electrical characteristics
Symbol		Parameter	Test conditions			Min.	Typ.			Max.	Unit
IR(1)		Reverse leakage current	Tj = 25 °C		VR = VRRM					6	µA
			Tj = 125 °C				6			60
V	(2)	Forward voltage drop	Tj = 25 °C		I = 8 A		0.95			1.05	V
	F		Tj = 150 °C		F		0.8			0.90

1.Pulse test: tp = 5 ms, δ < 2 %

2.Pulse test: tp = 380 µs, δ < 2 %

To evaluate the conduction losses use the following equation: P = 0.73 x IF(AV) + 0.021 IF2(RMS)

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STTH802-Y								Characteristics
Table 5.		Dynamic characteristics
Symbol		Parameter		Test conditions		Min.	Typ.	Max.		Unit
			IF = 1 A, dIF/dt = -50 A/µs,				25	30		ns
trr		Reverse recovery time	VR = 30 V, Tj = 25 °C
			IF = 1 A, dIF/dt = -100 A/µs,				17	22
			VR = 30 V, Tj = 25 °C
IRM		Reverse recovery current	IF = 8 A, dIF/dt = -200 A/µs,				5.5	7		A
			VR = 160 V, Tj = 125 °C
tfr		Forward recovery time	IF = 8 A, dIF/dt = 50 A/µs				150			ns
			VFR = 1.1 x VFmax, Tj = 25 °C
VFP		Forward recovery voltage	IF = 8 A, dIF/dt = 50 A/µs,				1.5			V
			Tj = 25 °C
Figure 1.		Peak current versus duty cycle		Figure 2.	Forward voltage drop versus
					forward current (typical values)

I	(A)
M
100
								IM	T
80								δd=tp/T		tp
60
		P = 5 W
40
			P = 2 W
20					P = 1 W
									δ
0
0.0	0.1	0.2	0.3	0.4	0.5	0.6	0.7	0.8	0.9	1.0

I	(A)
FM
200
180
160
140
120
100
80
60		Tj=150°C
40				Tj=25°C
20						VFM(V)
0
0.0	0.5	1.0	1.5	2.0	2.5	3.0

Figure 3. Forward voltage drop versus	Figure 4. Relative variation of thermal
forward current (maximum values)	impedance, junction to case,
	versus pulse duration

I	(A)
FM
200
180
160
140
120
100
80
60			Tj=150°C
40
20			Tj=25°C			VFM(V)
0
0.0	0.5	1.0	1.5	2.0	2.5	3.0

Z	/R
th(j-c)	th(j-c)

1.0
	Single pulse
			tp(s)
0.1
1.E-03	1.E-02	1.E-01	1.E+00

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