ST STTH802CT, STTH802CB, STTH802CFP User Manual

®
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 175 °C
(max) 0.95 V
V
F
trr (max) 20 ns
2x4A
200 V
STTH802CT/CB/CFP
A1
K
A2
FEATURES AND BENEFITS
Suited for SMPS
Low losses
Low forward and reverserecovery times
High surge current capability
High junction temperature
Insulated package: TO-220FPAB
TO-220AB
STTH802CT
A1
A2
K
A1
K
TO-220FPAB
STTH802CFP
K
DESCRIPTION
Dual center tap rectifier suited for Switch Mode Power Supplies and High frequency DC to DC converters. Packaged in DPAK, TO-220AB or TO-220FPAB. This device is intended foruseinlow voltage, high frequency inverters, free wheeling and polarity
DPAK
STTH802CB
A1
A2
K
protection applications.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage 200 V RMS forward current TO-220AB / TO-220FPAB /DPAK 10 A Average forward
current δ =0.5
TO-220AB / DPAK Tc = 155°C Per diode 4 A TO-220FPAB Tc = 145°C
A2
TO-220AB / DPAK Tc = 150°C Per device 8 A TO-220FPAB Tc = 130°C
I
FSM
T
stg
Surge non repetitive forwardcurrent tp = 10 ms Sinusoidal 50 A Storage temperature range - 65 + 175 °C
Tj Maximum operating junction temperature 175 °C
April 2002 - Ed: 1A
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STTH802/CT/CB/CFP
THERMAL PARAMETERS
Symbol Parameter Maximum Unit
R
th (j-c)
Junction to case TO-220AB / DPAK Per diode 4.0 °C/W
TO-220FPAB 6.5 TO-220AB / DPAK Total 2.5 TO-220FPAB 5
R
th (j-c)
Coupling TO-220AB / DPAK 1 °C/W
TO-220FPAB 3.5
When the diodes 1 and 2 are used simultaneously: Tj (diode1) = P(diode1) x R
(per diode) + P(diode2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
* Reverse leakage
R
current
V
** Forward voltage drop Tj = 25°C I
F
Tj = 25°C V
R=VRRM
4 µA
Tj = 125°C 2 40
= 4 A 1.1 V
F
Tj = 125°C I Tj = 25°C I
= 4 A 0.81 0.95
F
= 8 A 1.25
F
Tj = 125°C I
Pulse test: * tp = 5ms, δ <2%
** tp = 380µs, δ <2%
= 8 A 0.95 1.1
F
To evaluate the maximumconduction losses use the following equation : P=0.80xI
F(AV)
+ 0.037 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
trr Reverse recovery
time
tfr Forward recovery
time
V
FP
Forward recovery
Tj = 25°C I
Tj = 25°C I
Tj = 25°C I
= 0.5 A Irr = 0.25 A
F
IR=1A
=4A dIF/dt = 100 A/µs
F
VFR=1.1xVFmax
=4A dIF/dt = 100 A/µs 2.4 V
F
13 20 ns
50 ns
voltage
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STTH802/CT/CB/CFP
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
P (W)F(av)
5
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
δ = 0.05
δ = 0.1
I (A)F(av)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Forward voltage drop versus forward current (per diode).
I (A)FM
100.0
Tj=125°C
Tj=125°C
Typical values
Typical values
Tj=125°C
10.0
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
Tj=125°C
Maximum values
Maximum values
Tj=25°C
Maximum values
V (V)FM
Fig.2:Peak current versusformfactor (per diode).
I (A)M
60
50
P= 5W
40
30
20
10
P= 2W
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
δ
δ
P = 10W
=tp/T
T
tp
Fig. 4-1: Relative variation of thermal impedance junctiontocaseversuspulseduration(TO-220AB, DPAK).
Zth(j-c) / Rth(j-c)
1.0
δ = 0.5
δ = 0.2
δ = 0.1
δ
=tp/T
T
tp
Single pulse
tp(s)
0.1
1.E-03 1.E-02 1.E-01 1.E+00
Fig. 4-2:Relativevariation of thermal impedance
junctiontocase versus duration(TO-220FPAB).
Zth(j-c) / Rth(j-c)
1.0
δ = 0.5
δ = 0.2
δ = 0.1
0.1
Single pulse
T
tp(s)
=tp/T
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
δ
tp
Fig. 5-1: Non repetitive surge peak forward current versus overload duration per diode (TO-220AB, DPAK).
I (A)M
70
60
50
40
30
20
IM
10
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
Tc=25°C
Tc=75°C
Tc=125°C
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