ST STTH802CT, STTH802CB, STTH802CFP User Manual

®	STTH802CT/CB/CFP

HIGH EFFICIENCY ULTRAFAST DIODE

MAIN PRODUCT CHARACTERISTICS

IF(AV)	2 x 4A
VRRM	200 V
Tj (max)	175 °C
VF (max)	0.95 V
trr (max)	20 ns

FEATURES AND BENEFITS

■Suited for SMPS

■Low losses

■Low forward and reverse recovery times

■High surge current capability

■High junction temperature

■Insulated package: TO-220FPAB

DESCRIPTION

Dual center tap rectifier suited for Switch Mode Power Supplies and High frequency DC to DC converters.

Packaged in DPAK, TO-220AB or TO-220FPAB. This device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.

A1
K
A2
A2	A2
K	K
A1	A1
TO-220AB	TO-220FPAB
STTH802CT	STTH802CFP
K
K	A2
A1
DPAK
STTH802CB

ABSOLUTE RATINGS (limiting values)

Symbol		Parameter			Value	Unit
VRRM	Repetitive peak reverse voltage				200	V
IF(RMS)	RMS forward current	TO-220AB / TO-220FPAB / DPAK			10	A
IF(AV)	Average forward	TO-220AB / DPAK	Tc = 155°C	Per diode	4	A
	current δ =0.5
		TO-220FPAB	Tc = 145°C
		TO-220AB / DPAK	Tc = 150°C	Per device	8	A
		TO-220FPAB	Tc = 130°C
IFSM	Surge non repetitive forward current		tp = 10 ms Sinusoidal		50	A
Tstg	Storage temperature range				- 65 + 175	°C
Tj	Maximum operating junction temperature				175	°C

April 2002 - Ed: 1A	1/8

STTH802/CT/CB/CFP

THERMAL PARAMETERS

Symbol

Parameter

Maximum

Unit

Rth (j-c)

Junction to case

TO-220AB / DPAK

Per diode

4.0

°C/W

TO-220FPAB

6.5

TO-220AB / DPAK

Total

2.5

TO-220FPAB

5

Rth (j-c)

Coupling

TO-220AB / DPAK

1

°C/W

TO-220FPAB

3.5

When the diodes 1 and 2 are used simultaneously:

Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR*

Reverse leakage

Tj = 25°C

V R = VRRM

4

μA

current

Tj = 125°C

2

40

VF**

Forward voltage drop

Tj = 25°C

I F = 4 A

1.1

V

Tj = 125°C

I F = 4 A

0.81

0.95

Tj = 25°C

I F = 8 A

1.25

Tj = 125°C

I F = 8 A

0.95

1.1

Pulse test: * tp = 5ms, δ < 2%

** tp = 380µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :

P = 0.80 x IF(AV) + 0.037 IF2(RMS)

DYNAMIC ELECTRICAL CHARACTERISTICS

Symbol	Parameter		Tests conditions		Min.	Typ.	Max.	Unit
trr	Reverse recovery	Tj = 25°C		I F = 0.5 A Irr = 0.25 A		13	20	ns
	time			IR = 1A
tfr	Forward recovery	Tj = 25°C		I F = 4 A dIF/dt = 100 A/μs		50		ns
	time			VFR = 1.1 x VFmax
VFP	Forward recovery	Tj = 25°C		I F = 4 A dIF/dt = 100 A/μs		2.4		V
	voltage

2/8

STTH802/CT/CB/CFP

Fig. 1: Average forward power dissipation versus average forward current (per diode).

PF(av)(W)

5					δ = 0.1	δ = 0.2	δ = 0.5
			δ = 0.05
4									δ = 1
3
2
1									T
					IF(av)(A)			δ=tp/T		tp
0
0.0	0.5	1.0	1.5	2.0	2.5	3.0	3.5	4.0	4.5	5.0

Fig. 2: Peak current versus form factor (per diode).

IM(A)
60
									T
50	P = 5W
								δ=tp/T		tp
40
30
20
								P = 10W
10
	P = 2W	δ
0
0.0	0.1	0.2	0.3	0.4	0.5	0.6	0.7	0.8	0.9	1.0

Fig. 3: Forward voltage drop versus forward current (per diode).

IFM(A)

100.0
			Tj=125°C
			Typical values
10.0		Tj=125°C
		Maximum values
							Tj=25°C
							Maximum values
1.0
							VFM(V)
0.1
0.0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0	2.2	2.4	2.6	2.8

Fig. 4-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB, DPAK).

Zth(j-c) / Rth(j-c)

1.0
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse				T
		tp(s)	δ=tp/T	tp
0.1
1.E-03	1.E-02		1.E-01	1.E+00

Fig. 4-2: Relative variation of thermal impedance junction to case versus duration (TO-220FPAB).

Zth(j-c) / Rth(j-c)

1.0
δ = 0.5
δ = 0.2
δ = 0.1
0.1
Single pulse
				T
		tp(s)
0.0			δ=tp/T	tp
1.E-03	1.E-02	1.E-01	1.E+00	1.E+01

Fig. 5-1: Non repetitive surge peak forward current versus overload duration per diode (TO-220AB, DPAK).

IM(A)
70
60
50
40			Tc=25°C
30			Tc=75°C
20			Tc=125°C
IM
10
	t	t(s)
	δ=0.5
0
1.E-03	1.E-02	1.E-01	1.E+00
			3/8