ST STTH802 User Manual

STTH802

Ultrafast recovery diode

Main product characteristics

IF(AV)	8 A
VRRM	200 V
Tj (max)	175° C
VF (typ)	0.8 V
trr (typ)	17 ns

Features and benefits

■Very low conduction losses

■Negligible switching losses

■Low forward and reverse recovery time

■High junction temperature

Description

The STTH802 uses ST's new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits.

Packaged in TO-220AC, TO-220FPAC, DPAK, and D2PAK this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection.

A	K
K
A	A
K	K
TO-220AC	TO-220FPAC
STTH802D	STTH802FP
K	K
A	A
NC	NC
DPAK	D2PAK
STTH802B	STTH802G

Order codes

Part Number	Marking
STTH802D	STTH802
STTH802FP	STTH802
STTH802B	STTH802
STTH802B-TR	STTH802
STTH802G	STTH802
STTH802G-TR	STTH802

September 2006

Rev 2

1/11

www.st.com

Characteristics

STTH802

1

Characteristics

Table 1.

Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

200

V

IF(RMS)

RMS forward current

16

A

Average

TO-220A, DPAK, D2PAK

T = 145° C

IF(AV)

forward

c

8

A

TO-220FPAC

Tc = 125° C

current, δ = 0.5

Surge non

IFSM

repetitive

tp = 10 ms Sinusoidal

100

A

forward current

Tstg

Storage temperature range

-65 to + 175

° C

Tj

Maximum operating junction temperature

175

° C

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AC, DPAK, D2PAK

3.2

° C/W

TO-220FPAC

5.5

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR(1)

Reverse leakage current

Tj

= 25° C

VR = VRRM

6

µA

Tj = 125° C

6

60

VF(2)

Forward voltage drop

Tj

= 25° C

IF = 8 A

0.95

1.05

V

Tj = 150° C

0.8

0.90

1.Pulse test: tp = 5 ms, δ < 2 %

2.Pulse test: tp = 380 µs, δ < 2 %

To evaluate the conduction losses use the following equation:

P = 0.73 x IF(AV) + 0.021 IF2(RMS)

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STTH802						Characteristics
Table 4.		Dynamic characteristics
Symbol		Parameter		Test conditions	Min.	Typ	Max.	Unit
			IF = 1 A, dIF/dt = -50 A/µs,			25	30	ns
trr		Reverse recovery time	VR = 30 V, Tj = 25 °C
			IF = 1 A, dIF/dt = -100 A/µs,			17	22
			VR = 30 V, Tj = 25 °C
IRM		Reverse recovery current	IF = 8 A, dIF/dt = -200 A/µs,			5.5	7	A
			VR = 160 V, Tj = 125 °C
tfr		Forward recovery time	IF = 8 A, dIF/dt = 50 A/µs			150		ns
			VFR = 1.1 x VFmax, Tj = 25 °C
VFP		Forward recovery voltage	IF = 8 A, dIF/dt = 50 A/µs,			1.5		V
			Tj = 25 °C
Figure 1.		Peak current versus duty cycle		Figure 2. Forward voltage drop versus
				forward current (typical values)

I	(A)
M

100

	IM	T
80	δd=tp/T	tp

60

P = 5 W

40

P = 2 W

P = 1 W

20

δ

0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

I	(A)
FM
200
180
160
140
120
100
80
60		Tj=150°C
40				Tj=25°C
20						VFM(V)
0
0.0	0.5	1.0	1.5	2.0	2.5	3.0

Figure 3. Forward voltage drop versus	Figure 4. Relative variation of thermal
forward current (maximum values)	impedance, junction to case,
	versus pulse duration (TO-220AC,
	DPAK, D2PAK)

I	(A)
FM
200
180
160
140
120
100
80
60			Tj=150°C
40
20			Tj=25°C			VFM(V)
0
0.0	0.5	1.0	1.5	2.0	2.5	3.0

Z	/R
th(j-c)	th(j-c)

1.0
	Single pulse
	TO-220AC
	DPAK
	D2PAK
			tp(s)
0.1
1.E-03	1.E-02	1.E-01	1.E+00

3/11

Characteristics	STTH802
Figure 5. Relative variation of thermal	Figure 6. Junction capacitanceversus
impedance, junction to case,	reverse applied voltage (typical
versus pulse duration	values)
(TO-220FPAC)

Z	/R
th(j-c)	th(j-c)

1.0
Single pulse
TO-220FPAC
0.1
				tp(s)
0.0
1.E-03	1.E-02	1.E-01	1.E+00	1.E+01

C(pF)
100
			F=1MHz
			Vosc=30mVRMS
			Tj=25°C
			VR(V)
10
1	10	100	1000

Figure 7. Reverse recovery charges versus Figure 8. dIF/dt (typical values)

Reverse recovery time versus dIF/dt (typical values)

Q	(nC)
160	RR
140	IF=8A
	VR=160V
120
100	Tj=125°C
80
60
40	Tj=25°C
20		dIF/dt(A/µs)
0
10	100	1000

t	(ns)
	RR
80
70		IF=8A
		VR=160V
60
50
40		Tj=125°C
30		Tj=25°C
20
10
		dIF/dt(A/µs)
0
10	100	1000

Figure 9. Peak reverse recovery current	Figure 10. Dynamic parameters versus
versus dIF/dt (typical values)	junction temperature

I	(A)
RM
12
	IF=8A
10	VR=160V
8
6		Tj=125°C
4
2		Tj=25°C
		dIF/dt(A/µs)
0
10	100	1000

Q	RR	; I	[T	]	/ Q	RR	; I	RM	[T	=125°C]
1.4		RM	j						j
		IF=8A
1.2		VR=160V
1.0
0.8								IRM
0.6										QRR
0.4
0.2
													Tj(°C)
0.0
25					50					75	100	125	150

4/11