ST STTH802 User Manual

Main product characteristics

STTH802

Ultrafast recovery diode

I

F(AV)

V

RRM

T

j (max)

(typ) 0.8 V

V

F

(typ) 17 ns

t

rr

8 A

200 V

175° C

Features and benefits

■ Very low conduction losses

■ Negligible switching losses

■ Low forward and reverse recovery time

■ High junction temperature

Description

The STTH802 uses ST's new 200 V planar Pt
doping technology, and is specially suited for
switching mode base drive and transistor circuits.

Packaged in TO-220AC, TO-220FPAC, DPAK,

2

and D
voltage, high frequency inverters, free wheeling
and polarity protection.

PAK this device is intended for use in low

K

TO-220AC

STTH802D

K

A

A

K

NC

DPAK

STTH802B

K

A

K

TO-220FPAC

STTH802FP

K

A

A

NC

2

DPAK

STTH802G

Order codes

Part Number Marking

STTH802D STTH802

STTH802FP STTH802

STTH802B STTH802

STTH802B-TR STTH802

STTH802G STTH802

STTH802G-TR STTH802

September 2006 Rev 2 1/11

www.st.com

Characteristics STTH802

1 Characteristics

Table 1. Absolute ratings (limiting values at T

= 25° C, unless otherwise specified)

j

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage 200 V

RMS forward current 16 A

Average
forward
current, δ = 0.5

TO-220A, DPAK, D

TO-220FPAC

2

PA K

= 145° C

T

c

T

= 125° C

c

8A

Surge non

I

FSM

repetitive

tp = 10 ms Sinusoidal 100 A

forward current

T

stg

T

j

Table 2. Thermal parameters

Storage temperature range -65 to + 175 ° C

Maximum operating junction temperature 175 ° C

Symbol Parameter Value Unit

2

PA K 3 .2

R

th(j-c)

Table 3. Static electrical characteristics

Junction to case

TO-220AC, DPAK, D

TO-220FPAC 5.5

° C/W

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

= 125° C 6 60

T

j

T

= 25° C

j

= 150° C 0.8 0.90

T

j

V

R

= 8 A

I

F

= V

RRM

0.95 1.05

6

T

To evaluate the conduction losses use the following equation:
P = 0.73 x I

F(AV)

+ 0.021 I

F2(RMS)

µA

V

2/11

STTH802 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

Reverse recovery time

Reverse recovery current

Forward recovery time

Forward recovery voltage

Test conditions

I

= 1 A, dIF/dt = -50 A/µs,

F

VR = 30 V, Tj = 25 °C

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25 °C

V

R

= 8 A, dIF/dt = -200 A/µs,

I

F

VR = 160 V, Tj = 125 °C

I

= 8 A, dIF/dt = 50 A/µs

F

VFR = 1.1 x V

, Tj = 25 °C

Fmax

IF = 8 A, dIF/dt = 50 A/µs,

= 25 °C

T

j

Min. Typ Max. Unit

25 30 ns

17 22

5.5 7 A

150 ns

1.5 V

Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus

forward current (typical values)

IM(A)

100

80

60

40

20

0

P = 5 WP = 5 W

P = 2 WP = 2 W

P = 1 WP = 1 W

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

T

T

I

I

M

M

=tp/T

=tp/T

d

δ

tp

tp

δ

IFM(A)

200

180

160

140

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Tj=150°C

Tj=25°C

VFM(V)

Figure 3. Forward voltage drop versus

forward current (maximum values)

IFM(A)

200

180

160

140

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Tj=150°C

Tj=25°C

VFM(V)

Figure 4. Relative variation of thermal

impedance, junction to case,
versus pulse duration (TO-220AC,
DPAK, D

Z

th(j-c)/Rth(j-c)

1.0

Single pulse

TO-220AC

DPAK

2

DPAK

0.1

1.E-03 1.E-02 1.E-01 1.E+00

3/11

2

PAK)

tp(s)

Characteristics STTH802

Figure 5. Relative variation of thermal

impedance, junction to case,
versus pulse duration
(TO-220FPAC)

Z

th(j-c)/Rth(j-c)

1.0

Single pulse
TO-220FPAC

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

tp(s)

Figure 7. Reverse recovery charges versus

dI

/dt (typical values)

F

QRR(nC)

160

IF=8A

=160V

V

140

R

120

100

80

60

40

20

0

10 100 1000

Tj=125°C

Tj=25°C

dIF/dt(A/µs)

Figure 6. Junction capacitanceversus

reverse applied voltage (typical
values)

C(pF)

100

10

1 10 100 1000

V

F=1MHz

=30mV

osc

Tj=25°C

RMS

VR(V)

Figure 8. Reverse recovery time versus dI

(typical values)

tRR(ns)

80

70

60

50

40

30

20

10

0

10 100 1000

Tj=125°C

Tj=25°C

IF=8A

V

=160V

R

dIF/dt(A/µs)

F

/dt

Figure 9. Peak reverse recovery current

versus dI

IRM(A)

12

IF=8A

V

=160V

R

10

8

6

4

2

0

10 100 1000

/dt (typical values)

F

Tj=125°C

Tj=25°C

dIF/dt(A/µs)

Figure 10. Dynamic parameters versus

junction temperature

QRR;IRM[Tj]/QRR;IRM[Tj=125°C]

1.4

IF=8A

V

=160V

R

1.2

1.0

I

0.8

0.6

0.4

0.2

0.0

25 50 75 100 125 150

RM

Q

RR

Tj(°C)

4/11