![](/html/cc/cc94/cc940296cd7fbb5f9272684918d0d65a593ab038f970a670d13b43595ca63b38/bg1.png)
STTH61R04TV
Ultrafast recovery diode
Main product characteristics
I
F(AV)
V
RRM
V
F (typ)
t
rr (typ)
T
j
2 x 30 A
400 V
150° C
0.95 V
24 ns
Features and benefits
■ Ultrafast
■ Very low switching losses
■ High frequency and high pulsed current
operation
■ Low leakage current
■ Insulated package:
–ISOTOP
Electrical insulation = 2500 V
RMS
Capacitance = 45 pF
Description
The STTH61R04TV series uses ST's new 400 V
planar Pt doping technology. The STTH61R04 is
specially suited for switching mode base drive and
transistor circuits, such as welding equipment.
A1
A2
K1
K2
A1
K1 A2
A1
K1
A2
K2
K1
A2
ISOTOP
STTH61R04TV1
STTH61R04TV2
Order codes
Part Number Marking
STTH61R04TV1 STTH61R04TV1
STTH61R04TV2 STTH61R04TV2
K2
A1
K2
ISOTOP
March 2007 Rev 1 1/7
www.st.com
7
![](/html/cc/cc94/cc940296cd7fbb5f9272684918d0d65a593ab038f970a670d13b43595ca63b38/bg2.png)
Characteristics STTH61R04TV
1 Characteristics
Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
V
RSM
I
F(RMS)
I
F(AV)
I
FRM
I
FSM
T
T
Table 2. Thermal parameters
Repetitive peak reverse voltage 400 V
Non repetitive peak reverse voltage 400 V
RMS forward current 60 A
Average forward current, δ = 0.5 Per diode Tc = 80° C 30 A
Repetitive peak forward current tp = 5 µs, F = 1 kHz square 900 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 350 A
Storage temperature range -65 to + 150 °C
stg
Maximum operating junction temperature 150 °C
j
Symbol Parameter Value Unit
Per diode 1.5
R
R
th(j-c)
th(c)
Junction to case
° C/WTo t al 0 . 8
Coupling thermal resistance 0.1
When the diodes are used simultaneously:
ΔT
j(diode1)
Table 3. Static electrical characteristics
= P
(diode1)
x R
(per diode) + P
th(j-c)
(diode2)
x R
th(c)
Symbol Parameter Test conditions Min. Typ Max. Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= 25° C
j
= 125° C 15 150
T
j
= 25° C
T
j
= 150° C 0.95 1.20
T
j
= V
V
R
I
= 30 A
F
RRM
15
1.45
T
To evaluate the conduction losses use the following equation:
P = 0.9 x I
2/7
F(AV)
+ 0.01 x I
F2(RMS)
µA
VTj = 100° C 1.05 1.3
![](/html/cc/cc94/cc940296cd7fbb5f9272684918d0d65a593ab038f970a670d13b43595ca63b38/bg3.png)
STTH61R04TV Characteristics
Table 4. Dynamic characteristics
Symbol Parameter
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
t
Reverse recovery time
rr
I
V
I
VR = 30 V, Tj = 25° C
I
Reverse recovery current
RM
S Softness factor
t
Forward recovery time
fr
V
Forward recovery voltage
FP
I
VR = 320 V, Tj = 125° C
I
V
I
VFR = 1.5 x V
I
T
Figure 1. Conduction losses versus
average current
P(W)
50
45
40
35
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35 40
δ=0.05
δ=0.1 δ=0.2
I
F(AV)
(A)
δ=0.5
δ
δ=1
=tp/T
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Z
th(j-c)/Rth(j-c)
1.0
Single pulse
ISOTOP
0.1
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
tp(s)
Test conditions
= 1 A, dIF/dt = -100 A/µs,
F
= 30 V, Tj = 25° C
R
= 1 A, dIF/dt = -200 A/µs,
F
= 30 A, dIF/dt = -200 A/µs,
F
= 30 A, dIF/dt = -200 A/µs,
F
= 320 V, Tj = 125° C
R
= 30 A dIF/dt = 100 A/µs
F
= 30 A, dIF/dt = 100 A/µs,
F
= 25° C
j
, Tj = 25° C
Fmax
Figure 2. Forward voltage drop versus
IFM(A)
200
180
160
140
120
100
80
T
tp
60
40
20
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Figure 4. Peak reverse recovery current
IRM(A)
22
IF= 30A
20
=200V
V
R
18
16
14
12
10
8
6
4
2
0
10 100 1000
Min. Typ Max. Unit
forward current
TJ=150°C
TJ=150°C
(Maximum values)
(Maximum values)
TJ=150°C
TJ=150°C
(Typical values)
(Typical values)
versus dI
/dt (typical values)
F
Tj=125 °C
31 45
24 35
10 14 A
0.4
250 ns
2.9 V
(Maximum values)
(Maximum values)
Tj=25 °C
65
TJ=25°C
TJ=25°C
dIF/dt(A/µs)
ns
VFM(V)
3/7