ST STTH61R04TV User Manual

STTH61R04TV

Ultrafast recovery diode

Main product characteristics

I

F(AV)

V

RRM

V

F (typ)

t

rr (typ)

T

j

2 x 30 A

400 V

150° C

0.95 V

24 ns

Features and benefits

■ Ultrafast

■ Very low switching losses

■ High frequency and high pulsed current

operation

■ Low leakage current

■ Insulated package:

–ISOTOP

Electrical insulation = 2500 V

RMS

Capacitance = 45 pF

Description

The STTH61R04TV series uses ST's new 400 V planar Pt doping technology. The STTH61R04 is specially suited for switching mode base drive and transistor circuits, such as welding equipment.

A1

A2

K1

K2

A1

K1 A2

A1

K1

A2

K2

K1

A2

ISOTOP

STTH61R04TV1

STTH61R04TV2

Order codes

Part Number Marking

STTH61R04TV1 STTH61R04TV1

STTH61R04TV2 STTH61R04TV2

K2

A1

K2

ISOTOP

March 2007 Rev 1 1/7

www.st.com

7

Characteristics STTH61R04TV

1 Characteristics

Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

I

F(AV)

I

FRM

I

FSM

T

Table 2. Thermal parameters

Repetitive peak reverse voltage 400 V

Non repetitive peak reverse voltage 400 V

RMS forward current 60 A

Average forward current, δ = 0.5 Per diode Tc = 80° C 30 A

Repetitive peak forward current tp = 5 µs, F = 1 kHz square 900 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 350 A

Storage temperature range -65 to + 150 °C

stg

Maximum operating junction temperature 150 °C

j

Symbol Parameter Value Unit

Per diode 1.5

R

th(j-c)

th(c)

Junction to case

° C/WTo t al 0 . 8

Coupling thermal resistance 0.1

When the diodes are used simultaneously: ΔT

j(diode1)

Table 3. Static electrical characteristics

= P

(diode1)

x R

(per diode) + P

th(j-c)

(diode2)

x R

th(c)

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

= 125° C 15 150

T

j

= 25° C

T

j

= 150° C 0.95 1.20

T

j

= V

V

R

I

= 30 A

F

RRM

15

1.45

T

To evaluate the conduction losses use the following equation: P = 0.9 x I

2/7

F(AV)

+ 0.01 x I

F2(RMS)

µA

VTj = 100° C 1.05 1.3

STTH61R04TV Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C

t

Reverse recovery time

rr

I V

I VR = 30 V, Tj = 25° C

I

Reverse recovery current

RM

S Softness factor

t

Forward recovery time

fr

V

Forward recovery voltage

FP

I VR = 320 V, Tj = 125° C

I V

I VFR = 1.5 x V

I T

Figure 1. Conduction losses versus

average current

P(W)

50

45

40

35

30

25

20

15

10

5

0

0 5 10 15 20 25 30 35 40

δ=0.05

δ=0.1 δ=0.2

I

F(AV)

(A)

δ=0.5

δ

δ=1

=tp/T

Figure 3. Relative variation of thermal

impedance junction to case versus pulse duration

Z

th(j-c)/Rth(j-c)

1.0

Single pulse

ISOTOP

0.1

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

tp(s)

Test conditions

= 1 A, dIF/dt = -100 A/µs,

F

= 30 V, Tj = 25° C

R

= 1 A, dIF/dt = -200 A/µs,

F

= 30 A, dIF/dt = -200 A/µs,

F

= 30 A, dIF/dt = -200 A/µs,

F

= 320 V, Tj = 125° C

R

= 30 A dIF/dt = 100 A/µs

F

= 30 A, dIF/dt = 100 A/µs,

F

= 25° C

j

, Tj = 25° C

Fmax

Figure 2. Forward voltage drop versus

IFM(A)

200

180

160

140

120

100

80

T

tp

60

40

20

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

Figure 4. Peak reverse recovery current

IRM(A)

22

IF= 30A

20

=200V

V

R

18

16

14

12

10

8

6

4

2

0

10 100 1000

Min. Typ Max. Unit

forward current

TJ=150°C

(Maximum values)

TJ=150°C

(Typical values)

versus dI

/dt (typical values)

F

Tj=125 °C

31 45

24 35

10 14 A

0.4

250 ns

2.9 V

(Maximum values)

Tj=25 °C

65

TJ=25°C

dIF/dt(A/µs)

ns

VFM(V)

3/7