ST STTH6112TV User Manual

STTH6112TV

Ultrafast recovery - 1200 V diode

Main product characteristics

IF(AV)	2 x 30 A
VRRM	1200 V
Tj	150° C
VF (typ)	1.30 V
trr (typ)	45 ns

Features and benefits

■Ultrafast, soft recovery

■Very low conduction and switching losses

■High frequency and/or high pulsed current operation

■High reverse voltage capability

■High junction temperature

■Insulated package:

Electrical insulation = 2500 VRMS Capacitance < 45 pF

Description

The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.

Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications.

The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.

K2	A2	A2	K1
K1	A1	K2	A1

STTH6112TV1 STTH6112TV2

A1		A1
	K1	K2
A2		K1
K2		A2

ISOTOP

Order codes

Part Number	Marking
STTH6112TV1	STTH6112TV1
STTH6112TV2	STTH6112TV2

March 2006	Rev 1	1/8
	www.st.com	8

Characteristics

STTH6112TV

1

Characteristics

Table 1.

Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

1200

V

IF(RMS)

RMS forward current

100

A

IF(AV)

Average forward current, δ = 0.5

Tc = 70° C per diode

30

A

IFRM

Repetitive peak forward current

tp = 5 µs, F = 5 kHz square

300

A

IFSM

Surge non repetitive forward

tp = 10 ms Sinusoidal

250

A

current

Tstg

Storage temperature range

-65 to + 150

°C

Tj

Maximum operating junction temperature

150

°C

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

1.16

Total

0.63

°C/W

Rth(c)

Coupling thermal resistance

0.1

When the diodes are used simultaneously:

∆Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25° C

VR = VRRM

20

µA

Tj = 125° C

15

150

Tj = 25° C

2.10

Tj = 125° C

IF = 25 A

1.25

1.90

VF(2)

Forward voltage drop

Tj = 150° C

1.20

1.80

V

Tj = 25° C

2.25

Tj = 125° C

IF = 30 A

1.35

2.05

Tj = 150° C

1.30

1.95

1.Pulse test: tp = 5 ms, δ < 2 %

2.Pulse test: tp = 380 µs, δ < 2 %

To evaluate the conduction losses use the following equation:

P = 1.60 x IF(AV) + 0.012 IF2(RMS)

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STTH6112TV				Characteristics
Table 4.	Dynamic characteristics
Symbol	Parameter	Test conditions	Min.	Typ	Max.	Unit
		IF = 1 A, dIF/dt = -50 A/µs,			115
		VR = 30 V, Tj = 25° C
trr	Reverse recovery time	IF = 1 A, dIF/dt = -100 A/µs,		57	80	ns
		VR = 30 V, Tj = 25° C
		IF = 1 A, dIF/dt = -200 A/µs,		45	65
		VR = 30 V, Tj = 25° C
IRM	Reverse recovery current	IF = 30 A, dIF/dt = -200 A/µs,		25	35	A
		VR = 600 V, Tj = 125° C
S	Softness factor	IF = 30 A, dIF/dt = -200 A/µs,		1.5
		VR = 600 V, Tj = 125° C
tfr	Forward recovery time	IF = 30 A dIF/dt = 100 A/µs			550	ns
		VFR = 1.5 x VFmax, Tj = 25° C
VFP	Forward recovery voltage	IF = 30 A, dIF/dt = 100 A/µs,		6		V
		Tj = 25° C
Figure 1. Conduction losses versus		Figure 2. Forward voltage drop versus
	average current	forward current

P(W)
80
δ=0.05	δ=0.1	δ=0.2	δ=0.5	δ=1
70

60

50

40

30

20

T

10	IF(AV)(A)	δ=tp/T	tp

0

0

5

10

15

20

25

30

35

IFM(A)

200
180			Tj=150°C
160			(Maximum values)
140
120			Tj=150°C
			(Typical values)
100
80
60						Tj= 25 °C
						(Maximum values)
40
20					VFM(V)
0
0.0	0.5	1.0	1.5	2.0	2.5	3.0	3.5	4.0

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