ST STTH6110TV User Manual

STTH6110TV

Ultrafast recovery - high voltage diode

Main product characteristics

I

F(AV)

V

RRM

T

j

V

(typ) 1.3 V

F

(typ) 42 ns

t

rr

2 x 30 A

1000 V

150° C

Features and benefits

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

■ Insulated package

– Electrical insulation = 2500 V

RMS

Capacitance = 45 pF

Description

A1

A2

K1

K2

A1

K1

A2

K1

K2

ISOTOP

STTH6110TV1

STTH6110TV2

Order codes

Part Number Marking

STTH6110TV1 STTH6110TV1

A1

K2

K1 A2

A1

A2

ISOTOP

K2

The compromise-free, high quality design of this

STTH6110TV2 STTH6110TV2

diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.

These demanding applications include industrial power supplies, motor control, and similar industrial systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications.

The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate advantage for reducing maintenance of the equipment

March 2006 Rev 1 1/8

www.st.com

8

Characteristics STTH6110TV

1 Characteristics

Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FRM

I

FSM

T

Table 2. Thermal parameters

Repetitive peak reverse voltage 1000 V

RMS forward current 60 A

Average forward current, δ = 0.5 Per diode Tc = 60° C 30 A

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 350 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 240 A

Storage temperature range -65 to + 150 °C

stg

T

Maximum operating junction temperature 150 °C

j

Symbol Parameter Value Unit

Per diode 1.4

R

th(j-c)

th(c)

Junction to case

° C/WTotal 0.75

Coupling thermal resistance 0.1

When the diodes are used simultaneously: ∆T

j(diode1)

Table 3. Static electrical characteristics

= P

(diode1)

x R

(per diode) + P

th(j-c)

(diode2)

x R

th(c)

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

= 125° C 10 100

T

j

T

= 25° C

j

T

= 150° C 1.3 1.7

j

= V

V

R

= 30 A

I

F

RRM

15

2.0

T

To evaluate the conduction losses use the following equation: P = 1.3 x I

F(AV)

+ 0.013 I

F2(RMS)

µA

VTj = 100° C 1.4 1.8

2/8

STTH6110TV Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

Forward recovery time

t

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

70

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35 40

=0.05

=0.1

I (A)

F(AV)

=0.2

=0.5

Test conditions

IF = 1 A, dIF/dt = -50 A/µs, V

= 30 V, Tj = 25° C

R

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

IF = 1 A, dIF/dt = -200 A/µs,

= 30 V, Tj = 25° C

V

R

IF = 30 A, dIF/dt = -200 A/µs, V

= 600 V, Tj = 125° C

R

= 30 A, dIF/dt = -200 A/µs,

I

F

= 600 V, Tj = 125° C

V

R

= 30 A dIF/dt = 100 A/µs

I

F

= 1.5 x V

V

FR

I

= 30 A, dIF/dt = 100 A/µs,

F

, Tj = 25° C

Fmax

Tj = 25° C

Figure 2. Forward voltage drop versus

I (A)

FM

=1

T

200

180

160

140

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Min. Typ Max. Unit

forward current

Tj=150°C

(Maximum values)

Tj=150°C

(Typical values)

100

53 70

ns

42 55

24 32 A

1

450 ns

5V

Tj=25°C

(Maximum values)

V (V)

FM

Figure 3. Relative variation of thermal

impedance junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

t (s)

p

Figure 4. Peak reverse recovery current

versus dI

I (A)

RM

60

VR=600V

=125°C

T

j

50

40

30

20

10

0

0 50 100 150 200 250 300 350 400 450 500

3/8

IF=0.5 x I

/dt (typical values)

F

IF= I

F(AV)

dI /dt(A/µs)

F

IF= 2 x I

F(AV)