ST STTH60R04 User Manual

STTH60R04

Ultrafast recovery diode

Main product characteristics

IF(AV)	60 A
VRRM	400 V
Tj	175° C
VF (typ)	0.95 V
trr (typ)	31 ns

Features and benefits

■Very low switching losses

■High frequency and/or high pulsed current operation

■High junction temperature

Description

The STTH60R04 series uses ST's new 400 V planar Pt doping technology. The STTH60R04 is specially suited for switching mode base drive and transistor circuits.

Available in a through-the-hole package, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection.

A K

A

K

DO-247

STTH60R04W

Order codes

Part Number	Marking
STTH60R04W	STTH60R04W

Table 1.	Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol		Parameter			Value	Unit
VRRM	Repetitive peak reverse voltage				400	V
VRSM	Non repetitive peak reverse voltage				400	V
IF(RMS)	RMS forward current				100	A
IF(AV)	Average forward current, δ = 0.5			Tc = 110° C	60	A
IFRM	Repetitive peak forward current		tp = 5 µs F = 1 kHz square		375	A
IFSM	Surge non repetitive forward current		tp = 10 ms Sinusoidal		650	A
Tstg	Storage temperature range				-65 to +175	° C
Tj	Operating junction temperature range				-40 to +175	° C
March 2007			Rev 1			1/7
					www.st.com

Characteristics	STTH60R04

1 Characteristics

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

0.7

°C/W

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

I

(1)

Reverse leakage current

Tj

= 25° C

V

= V

60

µA

R

RRM

R

Tj

= 125° C

60

600

Tj

= 25° C

1.5

V

(2)

Forward voltage drop

T = 100° C

I

F

= 60 A

1.05

1.3

V

F

j

Tj

= 150° C

0.95

1.2

1.Pulse test: tp = 5 ms, δ < 2 %

2.Pulse test: tp = 380 µs, δ < 2 %

To evaluate the conduction losses use the following equation:

P = 0.9 x IF(AV) + 0.005 x IF2(RMS)

Table 4.	Dynamic characteristics
Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
		IF = 1 A, dIF/dt = -50 A/µs,			80
		VR = 30 V, Tj = 25° C
trr	Reverse recovery time	IF = 1 A, dIF/dt = -100 A/µs,		40	55	ns
		VR = 30 V, Tj = 25° C
		IF = 1 A, dIF/dt = -200 A/µs,		31	45
		VR = 30 V, Tj = 25° C
IRM	Reverse recovery current	IF = 60 A, dIF/dt = -200 A/µs,		11	16	A
		VR = 320 V, Tj = 125° C
S	Softness factor	IF = 60 A, dIF/dt = -200 A/µs,		0.4
		VR = 320 V, Tj = 125° C
tfr	Forward recovery time	IF = 60 A, dIF/dt = 100 A/µs		800		ns
		VFR = 1.1 x VFmax, Tj = 25° C
VFP	Forward recovery voltage	IF = 60 A dIF/dt = 100 A/µs		3.2		V
		Tj = 25° C

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STTH60R04	Characteristics
Figure 1. Conduction losses versus	Figure 2. Forward voltage drop versus
average current	forward current

P(W)

100

I	(A)
FM

200

	δ=0.5	δ=1
80	δ=0.2
	δ=0.1
60	δ=0.05
40
20			T
	IF(AV)(A)	δ=tp/T	tp

0

0

10

20

30

40

50

60

70

80

180
160				TJ=150°C
			(Maximum values)
140
120
100			TJ=150°C
			(Typical values)
80
60
40									TJ=25°C
								(Maximum values)
20										VFM(V)
0
0.0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0	2.2

Figure 3. Relative variation of thermal	Figure 4. Peak reverse recovery current
impedance junction to case	versus dIF/dt (typical values)
versus pulse duration

Zth	/Rth	(j-c)			I		(A)
(j-c)
1.0					RM
					25.0
Single pulse					22.5	IF= 60A
	DO-247					VR=320V
					20.0
					17.5
					15.0
					12.5		Tj=125 °C
					10.0
					7.5
					5.0
					2.5		Tj=25 °C
			tp(s)					dIF/dt(A/µs)
0.1					0.0
1.E-03		1.E-02	1.E-01	1.E+00	10		100	1000

Figure 5. Reverse recovery time versus	Figure 6. Reverse recovery charges versus
dIF/dt (typical values)	dIF/dt (typical values)

t	RR	(ns)		Q	(nC)
160				800	RR
			IF= 60A		IF= 60 A
140				700	VR=320V
			VR=320V
120				600
100		Tj=125 °C		500		Tj=125 °C
80				400
60		Tj=25 °C		300
40				200		Tj=25 °C
20			dIF/dt(A/µs)	100		dIF/dt(A/µs)
0				0
10		100	1000	10	100	1000

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