ST STTH60R04 User Manual

Main product characteristics

STTH60R04

Ultrafast recovery diode

I

F(AV)

V

RRM

T

j

(typ) 0.95 V

V

F

t

rr (typ)

60 A

400 V

175° C

31 ns

KA

Features and benefits

■ Very low switching losses

■ High frequency and/or high pulsed current

operation

■ High junction temperature

DO-247

STTH60R04W

K

Description

The STTH60R04 series uses ST's new 400 V
planar Pt doping technology. The STTH60R04 is
specially suited for switching mode base drive and
transistor circuits.

Available in a through-the-hole package, this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.

Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)

Order codes

Part Number Marking

STTH60R04W STTH60R04W

A

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

I

F(AV)

I

FRM

I

FSM

T

March 2007 Rev 1 1/7

Repetitive peak reverse voltage 400 V

Non repetitive peak reverse voltage 400 V

RMS forward current 100 A

Average forward current, δ = 0.5 Tc = 110° C 60 A

Repetitive peak forward current tp = 5 µs F = 1 kHz square 375 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 650 A

Storage temperature range -65 to +175 ° C

stg

Operating junction temperature range -40 to +175 ° C

T

j

www.st.com

Characteristics STTH60R04

1 Characteristics

Table 2. Thermal parameters

Symbol Parameter Value Unit

R

th(j-c)

Table 3. Static electrical characteristics

Junction to case 0.7 °C/W

Symbol Parameter Test conditions Min Typ Max Unit

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Reverse leakage current

R

(2)

Forward voltage drop

F

Tj = 25° C

VR = V

I

= 60 A

F

RRM

= 125° C 60 600

T

j

= 25° C

T

j

= 150° C 0.95 1.2

T

j

60

1.5

To evaluate the conduction losses use the following equation:
P = 0.9 x I

Table 4. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

+ 0.005 x I

F(AV)

F2(RMS)

Reverse recovery time

Reverse recovery current

Test conditions

IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C

I

= 1 A, dIF/dt = -100 A/µs,

F

VR = 30 V, Tj = 25° C

= 1 A, dIF/dt = -200 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 60 A, dIF/dt = -200 A/µs,

I

F

VR = 320 V, Tj = 125° C

Min Typ Max Unit

80

40 55

31 45

11 16 A

µA

VTj = 100° C 1.05 1.3

ns

I

S Softness factor

t

Forward recovery time

fr

V

Forward recovery voltage

FP

F

V

I

F

V

I

F

T

2/7

= 60 A, dIF/dt = -200 A/µs,

= 320 V, Tj = 125° C

R

= 60 A, dIF/dt = 100 A/µs

= 1.1 x V

FR

, Tj = 25° C

Fmax

= 60 A dIF/dt = 100 A/µs
= 25° C

j

0.4

800 ns

3.2 V

STTH60R04 Characteristics

Figure 1. Conduction losses versus

average current

P(W)

100

80

60

40

20

0

0 1020304050607080

δ=0.05

δ=0.1

δ=0.2

I

(A)

F(AV)

δ=0.5

δ

δ=1

T

=tp/T

Figure 3. Relative variation of thermal

impedance junction to case
versus pulse duration

Zth

/Rth

(j-c)

1.0

0.1

1.E-03 1.E-02 1.E-01 1.E+00

(j-c)

Single pulse

DO-247

tp(s)

Figure 5. Reverse recovery time versus

dI

/dt (typical values)

F

tRR(ns)

160

140

120

100

80

60

40

20

0

10 100 1000

Tj=125 °C

Tj=25 °C

IF= 60A

=320V

V

R

dIF/dt(A/µs)

Figure 2. Forward voltage drop versus

forward current

IFM(A)

200

180

160

140

120

100

80

60

40

tp

20

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

TJ=150°C

TJ=150°C

(Maximum values)

(Maximum values)

TJ=150°C

TJ=150°C

(Typical values)

(Typical values)

Figure 4. Peak reverse recovery current

versus dI

IRM(A)

25.0

IF= 60A

22.5

V

=320V

R

20.0

17.5

15.0

12.5

10.0

7.5

5.0

2.5

0.0

10 100 1000

/dt (typical values)

F

Tj=125 °C

Tj=25 °C

Figure 6. Reverse recovery charges versus

dIF/dt (typical values)

QRR(nC)

800

IF= 60 A

=320V

V

R

700

600

500

400

300

200

100

0

10 100 1000

Tj=125 °C

Tj=25 °C

TJ=25°C

TJ=25°C

(Maximum values)

(Maximum values)

dIF/dt(A/µs)

dIF/dt(A/µs)

VFM(V)

3/7