ST STTH60L04W User Manual

Mian product characteristics

I

F(AV)

V

RRM

T

(max) 175° C

j

V

(typ) 0.83 V

F

(max) 50 ns

t

rr

60 A

400 V

Features and benefits

STTH60L04W

Ultrafast high voltage rectifier

A

K

● Ultrafast switching

● Low reverse current

● Low thermal resistance

● Reduces switching and conduction losses

DO-247

STTH60L04W

Description

The STTH60L04W uses ST 400 V technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode.

Table 1. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

T

Repetitive peak reverse voltage 400 V

RMS forward current 90 A

Average forward current Tc = 90° C δ = 0.5 Per diode 60 A

Surge non repetitive forward current tp = 10 ms sinusoidal 600 A

Storage temperature range -55 to + 175 ° C

stg

T

Maximum operating junction temperature 175 ° C

j

Order codes

Part number Marking

STTH60L04W STTH60L04

October 2006 Rev 1 1/7

www.st.com

7

Characteristics STTH60L04W

1 Characteristics

Table 2. Thermal resistance

Symbol Parameter Value (max). Unit

th(j-c)

Junction to case

0.70 °C/W

R

Table 3. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ Max. Unit

Reverse leakage

(1)

I

R

current

(2)

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

F

= 25° C

T

j

= 150° C 100 1000

T

j

= 25° C

T

j

= 150° C 0.83 1.0

T

j

= V

V

R

I

= 60 A

F

RRM

50

µA

1.2 V

To evaluate the conduction losses use the following equation: P = 0.8 x I

Table 4. Dynamic characteristics (per diode)

Symbol Parameter Test conditions Min Typ Max Unit

t

rr

I

RM

S

factor

t

fr

V

FP

+ 0.0033 I

F(AV)

Reverse recovery time

Reverse recovery current

F2(RMS)

= 25° C

T

j

= 125° C

T

j

Softness factor Tj = 125° C

Forward recovery time

Forward recovery voltage

T

= 25° C

j

= 25° C

T

j

= 1 A dIF/dt = 50 A/µs

I

F

= 30 V

V

R

= 1 A dIF/dt = 200 A/µs

I

F

V

= 30 V

R

= 60 A VR = 200 V

I

F

/dt = 100 A/µs

dI

F

= 60 A VR = 200 V

I

F

/dt = 100 A/µs

dI

F

= 60 A dIF/dt = 200 A/µs

I

F

V

= 1.1 x V

FR

= 60 A dIF/dt = 200 A/µs

I

F

= 1.1 x V

V

FR

Fmax

66 90

36 50

15 A

0.4

600 ns

3.2 V

ns

2/7

STTH60L04W Characteristics

(A)

Figure 1. Conduction losses versus

average forward current (per diode)

P(W)

80

70

60

50

40

30

20

10

0

0 1020304050 607080

d=0.05

d=0.1

I

F(AV)

d=0.2

d=0.5

T

(A)

Figure 3. Relative variation of thermal

impedance junction to case versus pulse duration

/R

Z

th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

th(j-c)

Single pulse

tP(s)

Figure 2. Forward voltage drop versus

forward current (per diode)

I

FM

d=1

200

180

160

140

120

100

80

60

40

20

0

VFM(V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

TJ=150°C

(Maximum values)

TJ=150°C

(Typical values)

TJ=25°C

(Maximum values)

Figure 4. Peak reverse recovery current

versus dI

/dt (typical values, per

F

diode)

I

(A)

RM

45

IF=I

F(AV)

40

VR=200V T

=125°C

j

35

30

25

20

15

10

5

0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

Figure 5. Reverse recovery time versus

dI

/dt (typical values, per diode)

F

t(ns)

rr

300

250

200

150

100

50

0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

IF=I

F(AV)

VR=200V T

=125°C

j

Figure 6. Reverse recovery charges versus

dIF/dt (typical values, per diode)

Q(nC)

rr

3000

IF=I

F(AV)

VR=200V

2500

=125°C

T

j

2000

1500

1000

500

0

0 100 200 300 400 500

3/7

dIF/dt(A/µs)