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Mian product characteristics
I
F(AV)
V
RRM
T
(max) 175° C
j
V
(typ) 0.83 V
F
(max) 50 ns
t
rr
60 A
400 V
Features and benefits
STTH60L04W
Ultrafast high voltage rectifier
A
K
● Ultrafast switching
● Low reverse current
● Low thermal resistance
● Reduces switching and conduction losses
DO-247
STTH60L04W
Description
The STTH60L04W uses ST 400 V technology
and is specially suited for use in switching power
supplies, welding equipment, and industrial
applications, as an output rectification diode.
Table 1. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
Repetitive peak reverse voltage 400 V
RMS forward current 90 A
Average forward current Tc = 90° C δ = 0.5 Per diode 60 A
Surge non repetitive forward current tp = 10 ms sinusoidal 600 A
Storage temperature range -55 to + 175 ° C
stg
T
Maximum operating junction temperature 175 ° C
j
Order codes
Part number Marking
STTH60L04W STTH60L04
October 2006 Rev 1 1/7
www.st.com
7
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Characteristics STTH60L04W
1 Characteristics
Table 2. Thermal resistance
Symbol Parameter Value (max). Unit
th(j-c)
Junction to
case
0.70 °C/W
R
Table 3. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ Max. Unit
Reverse leakage
(1)
I
R
current
(2)
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Forward voltage drop
F
= 25° C
T
j
= 150° C 100 1000
T
j
= 25° C
T
j
= 150° C 0.83 1.0
T
j
= V
V
R
I
= 60 A
F
RRM
50
µA
1.2
V
To evaluate the conduction losses use the following equation:
P = 0.8 x I
Table 4. Dynamic characteristics (per diode)
Symbol Parameter Test conditions Min Typ Max Unit
t
rr
I
RM
S
factor
t
fr
V
FP
+ 0.0033 I
F(AV)
Reverse recovery
time
Reverse recovery
current
F2(RMS)
= 25° C
T
j
= 125° C
T
j
Softness factor Tj = 125° C
Forward recovery
time
Forward recovery
voltage
T
= 25° C
j
= 25° C
T
j
= 1 A dIF/dt = 50 A/µs
I
F
= 30 V
V
R
= 1 A dIF/dt = 200 A/µs
I
F
V
= 30 V
R
= 60 A VR = 200 V
I
F
/dt = 100 A/µs
dI
F
= 60 A VR = 200 V
I
F
/dt = 100 A/µs
dI
F
= 60 A dIF/dt = 200 A/µs
I
F
V
= 1.1 x V
FR
= 60 A dIF/dt = 200 A/µs
I
F
= 1.1 x V
V
FR
Fmax
Fmax
66 90
36 50
15 A
0.4
600 ns
3.2 V
ns
2/7
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STTH60L04W Characteristics
Figure 1. Conduction losses versus
average forward current (per diode)
P(W)
80
70
60
50
40
30
20
10
0
0 1020304050 607080
d=0.05
d=0.1
I
F(AV)
d=0.2
d=0.5
T
(A)
Figure 3. Relative variation of thermal
impedance junction to case versus
pulse duration
/R
Z
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
th(j-c)
Single pulse
tP(s)
Figure 2. Forward voltage drop versus
forward current (per diode)
I
FM
d=1
200
180
160
140
120
100
80
60
40
20
0
VFM(V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
TJ=150°C
(Maximum values)
TJ=150°C
(Typical values)
TJ=25°C
(Maximum values)
Figure 4. Peak reverse recovery current
versus dI
/dt (typical values, per
F
diode)
I
(A)
RM
45
IF=I
F(AV)
40
VR=200V
T
=125°C
j
35
30
25
20
15
10
5
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
Figure 5. Reverse recovery time versus
dI
/dt (typical values, per diode)
F
t(ns)
rr
300
250
200
150
100
50
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
IF=I
F(AV)
VR=200V
T
=125°C
j
Figure 6. Reverse recovery charges versus
dIF/dt (typical values, per diode)
Q(nC)
rr
3000
IF=I
F(AV)
VR=200V
2500
=125°C
T
j
2000
1500
1000
500
0
0 100 200 300 400 500
3/7
dIF/dt(A/µs)